GOFORD(谷峰电子)MOSFET选型表
GOFORD(谷峰电子)M提供Trench Mosfet/Planar Mosfet/N-Channel Enhancement Mode Power MOSFET/SiC MOSFET选型：VDS(V)：-250~1200，Id at 25℃(max)(A)：-200~400，PD(max)(W)：0.3-2300，Ciss(pF)：19-15870.
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产品型号
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品类
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Id at 25℃(max)(A)
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Crss(pF)
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Vgs(th)typ(V)
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VDS(V)
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Ciss(pF)
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Configuration
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RDS(on)(typ)(@4.5V)(mΩ、Ω)
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Qg(nC)
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ESD
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PD(max)(W)
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Package
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G06P01E
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Trench Mosfet
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-4A
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253
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-0.6V
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-12V
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1087
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P channel
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23mΩ~28mΩ
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14
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ESD
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1.8W
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SOT-23
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选型表 - GOFORD 立即选型
How to Choose the Alternatives
型号- FDN5618P,G160N04S2,DMG4800LSD,A2T,FQB50N06TM,G2312,G02P06,G110N06K,GT030N08M,MDD3752RH,PSMN012-80BS.118,2302,G130N06M,GT080N10M,45P40,2300F,DMG3420U-7
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