Socay Dual Programmable Transient Voltage Suppressor(TVS) Selection Guide

【选型】硕凯电子（Socay）TVS瞬态抑制二极管选型指南

选型目录：

Surface Mount Transient Voltage Suppressors(TVS)

Axial/Radial Lead Transient Voltage Suppressors (TVS)

Dual Programmable Transient Voltage Suppressor(TVS)

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80

Dual Programmable Transient Voltage Suppressor(TVS)

S61089, S61089A & S61089B

SOP-8

This device has been especially designed to protect subscriber line

card interfaces (SLIC) against transient over-voltages. Positive

overloads are clipped with 2 diodes. Negative surges are suppressed

by 2 thyristors, their breakdown voltage being referenced to-V

BAT

through the gate. This component presents a very low gate triggering

current (I

GT

) in order to reduce the current consumption on printed

circuit board during the firing phase. A particular attention has been

given to the internal wire bonding. The configuration ensures reliable

protection, eliminating the overvoltage introduced by the parasitic

inductances of the wiring (Ldi/dt), especially for very fast transients.

u

Dual line programmable transient voltage suppressor

u

Wide negative firing voltage rage :

V

MGL

= -75V (S61089)

V

MGL

= -100V (S61089A)

V

MGL

= -155V (S61089B)

u

Low dynamic switching voltages V

FP

and V

DGL

u

Low gate triggering current: I

GT

= 5mA max

u

Peak pulse current: I

PP

= 30A (10/1000

μ

s)

u

Holding current: I

H

> 150mA

The devices are not subject to ageing and provide a fail safe mode in

short circuit for a better protection. They are used to help equipment

to meet various standards such as UL1950, IEC / CSA C22.2,

UL1459 and FCC part68.

Type

Marking

S61089

SE69

S61089A

SE69A

S61089B

SE69B

Parameter

Symbol

Value

Units

Repetitive Peak Off-state Voltage, V

GK

=0 S61089

V

DRM

-90

V

S61089A

-120

S61089B

-170

Repetitive Peak Gate-cathode Voltage, V

KA

=0 S61089

V

GKRM

-85

V

S61089A

-120

S61089B

-170

Non-repetitive Peak On-state Current

I

PPSM

A

10/1000

μ

s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

30

5/320

μ

s (ITU-T K.20,K.218 & K.45,K.44 open-circuit voltage wave shape 10/7000

μ

)

40

1.2/50

μ

s

(Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

100

2/10

μ

s

(Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

120

Non-repetitive Peak On-state Current. V

GG

=-75V 50Hz to 60Hz 0.1s

I

TSM

11

A

1s

4.8

5s

2.7

300s

0.95

900s

0.93

Operating Free-air Temperature Range

T

A

-40 ~ +85

°

C

Operating Junction Temperature Range

T

J

-40 ~ +150

°

C

Storage Temperature Range

T

STG

-40 ~ +150

°

C

Fe

ature

Functional Diagram

Benefits

Marking

Absolute Maximum Ratings

D

escription

www.socay.com

81

Dual Programmable Transient Voltage Suppressor(TVS)

S61089, S61089A & S61089B

Symbol

Parameter

I

D

Off-state current

I

H

Holding current

V

(BO)

Breakover voltage

V

F

Forward voltage

V

FRM

Peak forward recovery voltage

V

GK(BO)

Gate-cathode impulse breakover voltage

I

GKS

Gate reverse current

I

GT

Gate trigger current

V

GT

Gate-cathode trigger voltage

C

KA

Cathode-anode off-state capacitance

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I

D

Off-State Current

V

D

=V

DRM

, V

GK

=0

T

J

=25

°

C

-5

μ

A

T

J

=85

°

C

-50

μ

A

V

(BO)

Breakover Voltage

2/10

μ

s, I

PP

= -56A, R

S

=45

Ω

, V

GG

= -48V, C

G

=220nF

-57

V

2/10

μ

s, I

PP

= -100A, R

S

=50

Ω

,

GG

= -48V, C

G

=220nF

-60

1.2/50

μ

s, I

PP

= -53A, R

S

=47

Ω

, V

GG

=- 48V, C

G

=220nF

-60

1.2/50

μ

s, I

PP

= -96A, R

S

=52

Ω

, V

GG

= -48V, C

G

=220nF

-64

V

GK(BO)

Gate-cathode I

mpulse

Breakover Voltage

2/10

μ

s, I

PP

= -56A, R

S

=45

Ω

, V

GG

= -48V, C

G

=220nF

9

V

2/10

μ

s, I

PP

= -100A, R

S

=50

Ω

,

GG

= -48V, C

G

=220nF

12

1.2/50

μ

s, I

PP

= -53A, R

S

=47

Ω

, V

GG

= -48V, C

G

=220nF

12

1.2/50

μ

s, I

PP

= -96A, R

S

=52

Ω

, V

GG

= -48V, C

G

=220nF

16

V

F

Forward Voltage

I

F

=5A,T

W

=200

μ

s

3

V

FRM

Peak Forward

Recovery Voltage

2/10

μ

s, I

PP

= -56A, R

S

=45

Ω

, V

GG

= -48V, C

G

=220nF

6

V

2/10

μ

s, I

PP

= -100A, R

S

=50

Ω

,

GG

= -48V, C

G

=220nF

8

1.2/50

μ

s, I

PP

= -53A, R

S

=47

Ω

, V

GG

=- 48V, C

G

=220nF

8

1.2/50

μ

s, I

PP

= -96A, R

S

=52

Ω

, V

GG

= -48V, C

G

=220nF

12

I

H

Holding Current

I

T

=-1A, di/dt=1A/ms, V

GG

= -48V

-150

mA

I

GKS

Gate Reverse Current

V

GG

=V

GK

=V

GKRM

, VKA=0

T

J

=25

°

C

-5

μ

A

T

J

=85

°

C

-50

μ

A

I

GT

Gate Trigger Current

I

T

= -3A, t

p(g)

≥

20

μ

s, V

GG

= -48V

5

mA

V

GT

Gate-cathode Trigger

Voltage

I

T

= -3A, t

p(g)

≥

20

μ

s, V

GG

= -48V

2.5

V

Q

GS

Gate Switching

Charge

1.2/50

μ

s, I

PP

= -53A, R

S

=47

Ω

, V

GG

=- 48V, C

G

=220nF

0.1

μ

C

KA

Cathode-anode

Off-State Capacitance

F=1MHz, V

d

=1V, I

G

=0

V

D

= -3V

100

pF

V

D

= -48V

50

pF

Electrical Characteristics (T

A

=25

°C

)

Parameters Related to The Diode

(T

A

=25

°C

)

www.socay.com

82

Dual Programmable Transient Voltage Suppressor(TVS)

S61089, S61089A & S61089B

DIM

Millimeters

Inches

Min

Max

Min

Max

A

4.80

5.00

0.189

0.197

B

3.80

4.00

0.150

0.157

C

1.35

1.75

0.053

0.069

D

0.35

0.51

0.013

0.020

G

1.27BSC

0.050BSC

H

0.10

0.25

0.004

0.010

J

0.19

0.25

0.007

0.010

K

0.40

1.27

0.016

0.050

M

0

°

8

°

0

°

8

°

S

5.80

6.20

0.228

0.244

SO

P

-

8

Package Outline & Dimensions

Soldering Footprint

【选型】硕凯电子（Socay）TVS瞬态抑制二极管选型指南

选型目录：

Surface Mount Transient Voltage Suppressors(TVS)

Axial/Radial Lead Transient Voltage Suppressors (TVS)

Dual Programmable Transient Voltage Suppressor(TVS)