MMRF5014H RF Power GaN Transistor Technical Data

A5G26H110nAirFast射频功率氮化镓晶体管

本资料详细介绍了NXP Semiconductors公司生产的A5G26H110N型号Airfast射频功率GaN晶体管的技术数据。该晶体管是一款15W非对称Doherty射频功率GaN晶体管，专为需要非常宽瞬时带宽能力的蜂窝基站应用设计，频率范围为2496至2690 MHz。资料中提供了该晶体管在指定频率范围内的性能保证，并详细列出了其电气特性、热特性、ESD保护特性、封装信息等。

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,DOHERTY射频功率氮化镓晶体管,DOHERTY RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G26H110N,A5G26H110NT4,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

MMG3006NT1异质结双极晶体管技术（InGaP HBT）技术数据

NXP  -  异质结双极晶体管,HETEROJUNCTION BIPOLAR TRANSISTOR,CRCW06030000FKEA,06035J2R0BS,MMG3006NT1,C0603C104J5RAC,1008CS--150XJB,06035J0R5BS,06035J2R7BS,ERJ8GEYJ101V,06035J6R8BS,06035J3R0BS,ECUV1H150JCV,C0603C103J5RAC,06035J3R9BS,06035J5R6BS,T491A225K016AT,06035J3R6BS

A5G19H605W19N AirFast射频功率氮化镓晶体管产品数据表

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,非对称DOHERTY射频功率氮化镓晶体管,ASYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G19H605W19N,A5G19H605W19NR3,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

基于MQX的MK30X256单相电能表参考设计

本资料介绍了基于MK30X256微控制器的单相电能表参考设计。设计展示了MK30X256在电能表应用中的能力，包括硬件和软件设计特点。该设计适用于单相两线安装的电力测量，具有高精度测量功能，支持ZigBee网络连接，适用于智能家居电网。资料详细描述了硬件设计、软件配置、测量原理和系统概念。

NXP  -  WP7104LSRD,M310,0805YD106KAT2A,SFH6106-4,MCCC104K2NRTF,150020254,MCR10EZPJ470,BAT54CLT1,RC73L2D473JTF,MAG3110,ECL05US03-T,MMSD4148T1G,BAV99LT1G,MLZ2012A1R0PT,B72220S0271K101,TSW-103-07-S-D,CR0805-JW-223ELF,MR25H10CDC,08055C102KAT2A,08051A221JAT2A,08055A180JAT2A,WRM0204C-100KFI,C0805C105K3RAC7800,MR25H10,WRM0204C-220KFI,BAT54CLT1G,EEE0JA470SR,RC0805FR-07680RL,CR0805-JW-471ELF,OP506B,CMR200T32.768KDZF-UT,08055A101KAT2A,WRM0204C-100RFI,CR0805-JW-391ELF,MMSZ5231BT1G,TSAL4400,ASP-159234-03,RK73H2ATTD1001F,SMTU2032-LF,CR0805-8W-103JT,BRH-10-VUA,CR0805-FX-4701ELF,EVQPAC05R,MC1322X,D2F-01L,PK40X256VLQ100,CR2032,WRM0204C-1K0FI,1658622-1,MK30X256,WRM0204C-4K7FI,1658609-4,KPT-3216ID,T491A225K016AT

A3G18D510-04S射频功率氮化镓晶体管数据表

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,AIRFAST射频功率氮化镓晶体管,C5750X7S2A106M230KB,A3G18D510-04S,600F0R8BT250XT,C10A50Z4,600F150JT250XT,600F1R2BT250XT,X3C19P1-03S,600F1R6BT250XT,600F1R5BT250XT,600F1R0BT250XT,CRCW12063R90FKEA,600F2R0BT250XT,CRCW12069R10FKEA,600F110JT250XT,D135295,CRCW12064R30FKEA,A3G18D510--04SR3,600F0R4BT250XT,MCGPR100V227M16X26,600F0R2BT250XT,CRCW12067R50FKEA,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A5G18H610W19N AirFast射频功率氮化镓晶体管产品数据表

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,非对称DOHERTY射频功率氮化镓晶体管,ASYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G18H610W19N,A5G18H610W19NR3,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A3G26H501W17S射频功率氮化镓晶体管技术数据

NXP  -  RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,SYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,对称DOHERTY射频功率氮化镓晶体管,A3G26H501W17S,A3G26H501W17SR3,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A3G26H502W17S射频功率氮化镓晶体管技术数据

NXP  -  RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,SYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,对称DOHERTY射频功率氮化镓晶体管,A3G26H502W17S,A3G26H502W17SR3,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A5G26S004N AirFast射频功率氮化镓晶体管产品数据表

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G26S004NT6,A5G26S004N,MASSIVE MIMO ACTIVE ANTENNA SYSTEMS,5G基站,5G BASE STATIONS,低复杂度线性化系统,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用,大规模MIMO有源天线系统,LOW COMPLEXITY LINEARIZATION SYSTEMS

A3G26H350W17S射频功率氮化镓晶体管技术数据

NXP  -  RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,SYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,对称DOHERTY射频功率氮化镓晶体管,A3G26H350W17SR3,A3G26H350W17S,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A3G23H500W17S射频功率氮化镓晶体管技术数据

NXP  -  RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,SYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,对称DOHERTY射频功率氮化镓晶体管,A3G23H500W17SR3,A3G23H500W17S,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A5G37H110N AirFast射频功率氮化镓晶体管

本资料介绍了NXP Semiconductors公司生产的A5G37H110N型号Airfast射频功率GaN晶体管。该晶体管专为蜂窝基站应用设计，具有非常宽的瞬时带宽能力，频率范围为3600至3800 MHz。资料详细介绍了该产品的特性、电气参数、热特性、封装信息以及订购信息。

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,DOHERTY射频功率氮化镓晶体管,DOHERTY RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G37H110NT4,A5G37H110N,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A3G26H200W17S射频功率氮化镓晶体管技术数据

NXP  -  RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,SYMMETRICAL DOHERTY RF POWER GAN TRANSISTOR,对称DOHERTY射频功率氮化镓晶体管,A3G26H200W17S,A3G26H200W17SR3,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用

A3G20S350--01S射频功率氮化镓晶体管技术数据

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,RF POWER GAN TRANSISTOR,射频功率氮化镓晶体管,AIRFAST射频功率氮化镓晶体管,C5750X7S2A106M230KB,600F0R8BT250XT,D134491,600F9R1BT250XT,CRCW120615R0FKEA,600F1R6BT250XT,A3G20S350--01SR3,A3G20S350--01S,100B100JT500XT,600F0R3BT250XT,600F0R6BT250XT,MCGPR100V227M16X26,DIGITAL PREDISTORTION ERROR CORRECTION SYSTEMS,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用,数字预失真纠错系统

A5G35S004N AirFast射频功率氮化镓晶体管

NXP  -  AIRFAST RF POWER GAN TRANSISTOR,AIRFAST射频功率氮化镓晶体管,A5G35S004N,A5G35S004NT6,CELLULAR BASE STATION APPLICATIONS,蜂窝基站应用