NCE60NP2012K NCEN&P-Channel complementary Power MOSFET
NCE60NP2012K采用先进的沟槽技术和设计,以低门电荷提供出色的R-DS(ON)。它可以用于多种应用。
■一般功能
▲N通道
●V-DS=60V,I-D=20A
◆R-DS(开)<35mΩ @ V-GS=10伏
◆R-DS(开)<40mΩ @ V-GS=4.5伏
▲p通道
●V-DS=-60V,I-D=-12A
◆R-DS(开)<100米Ω @ V-GS=-10V
◆R-DS(开)<125米Ω @ 电压-电压=-4.5伏
●超低R-ds高密度电池设计
●完全特征化的雪崩电压和电流
●稳定性和均匀性好,E-AS高
●良好的散热封装
●高ESD能力的特殊工艺技术
NCE60NP2012K NCEN和P沟道互补功率MOSFET |
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TO-252-4L |
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中文 英文 中英文 日文 |
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2018/06/25 |
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v1.0 |
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世强先进(深圳)科技股份有限公司 | |
世强硬创平台www.sekorm.com | |
世强硬创平台电子商城www.sekorm.com/supply/ | |
世强硬创平台www.sekorm.com | |
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品类
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封装/外壳/尺寸
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车规级/工业级
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Technology
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Polarity
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BVDSS(V)
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ID(A)
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VTH(V)
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RDS(ON)@4.5VTyp(mΩ)
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RDS(ON)@4.5VMax(mΩ)
|
RDS(ON)@2.5VTyp(mΩ)
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RDS(ON)@2.5VMax(mΩ)
|
VGS(th)(V)
|
CISS(pF)
|
QG(nC)
|
PD(W)
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NCE12P09S
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P-Channel Enhancement Mode Power MOSFET
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SOP-8
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工业级
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Trench
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P
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-12
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-9
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-0.7
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11.5
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18
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14
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±12
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产品型号
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品类
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Package
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IC(A) Tj=100℃
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VTH-Typ(V)
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VCE(sat)(V) @VGE=15V Typ
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VCE(sat)(V) @VGE=15V Max
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Switching Frequency
|
Voltage(V)
|
NCEM40W120HA34
|
IGBT Module
|
34mm
|
40
|
5.5
|
2
|
2.4
|
10~40KHz
|
1200
|
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