MC74VHC1G126, MC74VHC1GT126 Noninverting 3-State Buffer
●MC74VHC1G126/MC74VHC1GT126是单栅极同相3−微小封装中的状态缓冲区。MC74VHC1G126具有CMOS−MC74VHC1GT126具有TTL时的电平输入阈值−级别输入阈值。
●内部电路由三级组成,包括一个缓冲电路3−提供高抗噪性和稳定输出的状态输出。
●输入结构在施加高达5.5伏的电压时提供保护,而与电源电压无关。这允许该设备用于将5 V电路连接至3 V电路。当V-CC=0 V和输出电压超过V-CC时,输出结构也提供保护。这些输入和输出结构有助于防止电源电压造成的设备损坏− 输入/输出电压不匹配、备用电池、热插入等。
●特征
■设计用于2.0 V至5.5 V V-CC运行
■5伏时的3.5纳秒t-PD(典型值)
■输入/输出超过−耐电压高达5.5 V
■I-OFF支持部分断电保护
■3.0 V时的源/汇8 mA
■在SC中提供−88A,SC−74A,TSOP−5,SOT−553,SOT−953和UDFN6软件包
■芯片复杂度<100场效应晶体管
■NLV前缀,适用于需要独特现场和控制变更要求的汽车和其他应用;AEC−Q100合格且具备PPAP能力
■这些设备是Pb−无卤、无卤素/BFR,符合RoHS标准
MC74VHC1G126、MC74VHC1GT126同相三态缓冲器 |
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MC74VHC1G126、MC74VHC1GT126、M74VHC1G126DFT1G、M74VHC1G126DFT2G、NLVVHC1G126DFT1G、NLVVHC1G126DFT2G、M74VHC1GT126DF1G、M74VHC1GT126DF2G、NLVVHC1GT126DF2G、NLVVHC1GT126DF1G、MC74VHC1G126DBVT1G、MC74VHC1GT126DBVT1G、M74VHC1G126DTT1G、M74VHC1GT126DT1G、NLVVHC1GT126DT1G、MC74VHC1G126XV5T2G、MC74VHC1GT126XV5T2G、MC74VHC1G126P5T5G、MC74VHC1GT126P5T5G、MC74VHC1G126MU1TCG、MC74VHC1GT126MU1TCG、MC74VHC1GT126MU2TCG、MC74VHC1G126MU3TCG、MC74VHC1GT126MU3TCG |
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数据手册,数据表,data sheet |
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详见资料 |
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SC−88A;SOT−553;SOT−953;UDFN6;TSOP−5;SC−74A |
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中文 英文 中英文 日文 |
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March, 2021 |
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Rev. 22 |
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MC74VHC1G126/D |
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252 KB |
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