DDR5 Memory Modules
●DDR5旨在满足包括云计算和数据中心处理在内的广泛应用中对高效性能日益增长的需求。通过使用on DIMM 12V电压调节器（PMIC）和1.1 I/O电压，与DDR4相比，DDR5内存为开发人员提供了两倍的性能（4800到6400 MT/s），并提高了电源效率。
●DDR5还可以提高扩展性能，而不会在更高速度下降低通道效率。通过将突发长度加倍到BL16，并将存储组计数从16增加到32，可以提高性能。为了提高可靠性和效率，DDR5 DIMM在同一模块上使用两个40位完全独立的子通道。DDR5内存模块的最大芯片密度为64Gb，因此能够拥有更高的DIMM存储容量。
●特征
■命令/地址和控制总线的数据速率是原来的两倍
■在读取数据帧中生成CRC校验和
■默认突发长度增加到BL16–单次突发=64B数据
■集成温度传感器（MR4）
■DDR5 DRAM包含256个模式寄存器
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DDR5内存模块 |
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ST4098RD520805SB、ST2047UD520805SB、ST8198RD540405-SB、ST4098RD520805-SB、ST4098RD540405-SB、ST2048RD520805-SB、ST4G6SO5285-SB、ST2G6SO5285-SB、ST1G6SO5165-SB、ST4G6UD5285-SB、ST2G6UD5285-SB、ST1G6UD5165-SB |
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DDR5 SODIMM、DDR5 RDIMM、DDR5 ECC UDIMM、DDR5超值内存模块、DDR5内存模块、DDR5 UDIMM |
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数据手册,产品简介,Product Brief |
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中文 英文 中英文 日文 |
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01.11.22 |
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Rev.9 |
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2.1 MB |
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| 世强先进（深圳）科技股份有限公司 | |
| 世强硬创平台www.sekorm.com | |
| 世强硬创平台电子商城www.sekorm.com/supply/ | |
| 世强硬创平台www.sekorm.com | |
| 世强硬创平台www.sekorm.com |
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SMART - DDR5 ECC UDIMM,DDR5 RDIMM,DDR5 NON-ECC SODIMM,DDR5 ECC SODIMM,DDR5 ECC VLP UDIMM,DDR5 MEMORY MODULES,DDR5非ECC SODIMM,DDR5 VLP RDIMM,DDR5内存模块,SR2G7UD5285SBV,SR6G7UD5385HM,SRI2G7UD5285SBV,SR6G7UD5388HMV,SR6G6SO5385MB,SR4G7SO5285SB,SR2G7SO5288HA,SRI2G7UD5285SB,SR6G7UD5388HM,SR4G8RD5285SBV,SR4G7SO5288SB,SR4G8RD5288HAV,SR6G7UD5385HMV,SR6G6SO5385HM,SRI4G7SO5285SB,SR3G6SO5385HM,SR6G7SO5388HM,SR4G7UD5288SB,SR4G8RD5285SB,SRI2G7SO5285SB,SR4G7UD5285SB,SR2G7UD5288SBV,SRI6G7UD5385MB,SR4G7UD5285SBV,SR2G7UD5288SB,SR6G8RD5388HMV,ST4G7SO5285SB,SR2G7UD5285SB,SRI4G7UD5285SBV,SR4G8RD5288SBV,SR4G7UD5288MDV,SR2G7SO5285SB,SR4G8RD5285HAV,SR4G6SO5288SB,SR6G7UD5385MB,SR2G6SO5285SB,SR2G7SO5288SB,SR4G7UD5288HAV,SR4G6SO5285SB,SRI4G7UD5285SB,SR4G7SO5288HA,SRI2G7SO5288HA,SR4G8RD5288MDV,SRI6G7UD5385HM,SR4G7UD5288SBV,SR2G6SO5288SB,ENTERPRISE NETWORKING,数据中心处理,HIGH PERFORMANCE COMPUTING,CLOUD COMPUTING,STORAGE,高性能计算,存储器,企业网络,DATA CENTER PROCESSING,云计算
DuraMemory™DDR5超值内存
SMART提供一系列DDR5价值型内存模块，这些模块符合JEDEC标准，由一级ODM制造。利用其采购能力和供应商关系，SMART直接采购主流模块。这些价值型内存适用于高性能计算、数据中心、网络、存储和嵌入式计算等领域。
SMART - DDR5 VALUE RDIMM,DDR5 VALUE MEMORY,DDR5 VALUE ECC SODIMM,DDR5 VALUE NON-ECC UDIMM,DDR5超值内存,DDR5价值ECC SODIMM,DDR5值非ECC SODIMM,DDR5值ECC UDIMM,DDR5超值内存模块,DDR5 VALUE MEMORY MODULES,DDR5 VALUE ECC UDIMM,DDR5值非ECC UDIMM,DDR5 VALUE NON-ECC SODIMM,DDR5超值RDIMM,SRHG8RD5645-MD,SR2G6UD5285-SB,SR4G8RD5448-SP,SR2G7UD5288-SP,SR4G8RD5288-SP,SR2G6SO5285-SB,ST4G8RD5288-HA,SR2G7UD5288-SD,SR8G8RD5448-MD,SR1G6SO5165-SB,SR4G6SO5288-SP,STHG8RD5645-HM,SR2G8RD5285-SB,SR1G6UD5165-SB,SR4G7SO5285-SB,SRHG8RD5648-MD,SR2G8RD5288-MD,SR2G7UD5285-SB,SR2G7SO5288-SP,SR8G8RD5445-SB,SR3G8RD5385-SB,SR6G8RD5645-SB,SR2G6SO5288-SP,SR4G6SO5285-SB,SR1G6SO5168-SP,STHG8RD5648-HM,ST4G8RD5448-HA,ST3G8RD5385-HM,SR4G8RD5448-MD,ST6G8RD5645-HM,SR3G8RD5388-SP,ST2G8RD5288-HA,SR4G7SO5288-SP,SR4G7UD5285-SB,SR6G8RD5648-SP,ST8G8RD5445-HA,SRHG8RD5645-SB,SR8G8RD5448-SP,SR4G7UD5288-SP,SRHG8RD5648-SP,STAG8RD544H-HA,SR4G8RD5445-SB,SR2G8RD5288-SP,ST8G8RD5448-HA,SR4G8RD5285-SB,SR4G7UD5288-SD,SR6G8RD5385-SB,SRAG8RD5846-SB,SR4G6UD5285-SB,SR2G7SO5285-SB,网络,数据中心网络,嵌入式计算应用,DATA CENTERS,EMBEDDED COMPUTING APPLICATIONS,NETWORKING,STORAGE,高性能混凝土,数据中心,DATA CENTER NETWORKING,高性能计算,存储器,HIGH PERFORMANCE COMPUTING,HPC
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SMART提供以下技术参数的Dura Memory产品选型，品类：MIP,NVDIMM,RDIMM,SODIMM,UDIMM,XRDIMM,内存条；DDR3/4/5；容量：12MB-256GB；数据速率1333MT/s-4800MT/s；组件配置；工作温度范围：-40˚C 至 +85˚C
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产品型号
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品类
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DDR
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DIMM 类型
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容量
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数据速率
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组件配置
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工作温度范围
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ST4097MU44D825SAV
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UDIMM
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DDR4
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VLP Mini UDIMM
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32GB
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3200MT/s
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2Gx8
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C 温度（0˚C 至 +70˚C）
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ATP（华腾国际）DRAM存储模块和NAND闪存产品选型指南（英文）
Company Profile Segment Challenges and Solutions Thermal Solutions Endurance Solutions Security Solutions CFexpress & USB 3.0 Value Line SSDs DDR5 DRAM SOLUTIONS FLASH SOLUTIONS Flash Products Naming Rule Solutions & Technologies Flash Technology Overview table Complete Flash Spec Overview & Product Dimensions
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Apacer Technology (TWSE:8271), a global leader in digital storage solutions, has announced the mass production of its latest industrial-grade DDR5-6400 CUDIMM and CSODIMM memory modules. These modules are the first to feature a fully lead-free resistor design, eliminating the need for exemptions under the EU RoHS directive. Equipped with premium professional-grade Clock Driver (CKD) components and Transient Voltage Suppressors (TVS) diode as dual-core technologies, the modules are specifically engineered for high-performance computing (HPC) and artificial intelligence (AI) applications.
DDR5 Memory Modules ,Default Burst Length Increased to BL16 – Single Burst = 64B of Data
SMART‘s DDR5 memory modules have a maximum die density of 64Gb and hence are capable of having a much higher DIMM storage capacity.
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DDR5突发长度为BL16 ，是DDR4 的2倍，而存储体数也从DDR4的16个增加到了32个，因此DDR5相比较DDR4具有更高的性能。SMART DDR5存储模块最大的芯片密度可达64Gb，并且支持扩展到相对于DDR4 DIMM大的多的存储容量。
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本文探讨了DDR5内存模块的特点和应用。DDR5内存提供低延迟、高性能、几乎无限的访问耐久性和低功耗，适用于从手持设备到复杂系统部署的各种应用。与DDR4相比，DDR5具有更高的数据速率、更大的容量、更低的功耗和增强的可靠性、可用性和服务性（RAS）功能。文章详细比较了DDR5与DDR4在性能、容量、电压、通道架构、错误检测和纠正等方面的差异，并介绍了DDR5的增强功能，如双通道架构、片上ECC、数据接收器均衡、循环冗余检查（CRC）和DQS延迟监控。此外，文章还讨论了DDR5在解决市场挑战方面的作用，如信号完整性、电源传输和布局复杂性，以及SMART Modular Technologies在DDR5内存模块发展中的作用。
SMART - DDR5 DIMM,DDR4 DRAM,DDR5 DRAM,DDR4 DIMM,DDR5 MEMORY MODULE,DDR5内存模块
【产品】SMART推出的DDR5 RDIMM，数据速率达4800MT/s，32/64GB容量可选
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【选型】SMART DuraMemory™系列DRAM存储模块选型指南
Company Introduction DuraMemory Product Introduction RDIMM UDIMM/SODIMM XRDIMM/SODIMM for Aerospace&Military Module-In-A-Package (MIP) Industrial Temperature Introduction to Enterprise Memory
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SMART Modular Technologies Expands DuraMemory Portfolio with New DDR5 Very Low Profile ECC UDIMMs
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SMART Modular Technologies新产品工程师Raghabendra Rout博士的技术简介：使用SMART的保形涂层DDR5 RDIMM进行液体浸没冷却，增强数据中心的性能和可靠性
SMART Modular Technologies推出的符合涂层的DDR5 RDIMM内存模块，旨在提升数据中心在液体浸没冷却环境下的性能和可靠性。这些模块通过涂层技术提高耐腐蚀性、防潮、材料兼容性，以及热稳定性，从而延长使用寿命并降低维护成本。同时，DDR5技术提供高性能，满足数据密集型应用需求。
SMART - 保形涂层DDR5 RDIMM,CONFORMALLY COATED DDR5 RDIMMS,液浸冷却,LIQUID IMMERSION COOLING
DDR5 RDIMM Launched by SMART, Data Rate up to 4800MT/s, 32/64GB Capacity Optional
SMART‘s DDR5 Value RDIMMs are designed to meet increasing needs for efficient performance in a wide range of applications including cloud computing and data center processing.
DDR5 Value RDIMMs Provides Twice the Performance Compared to DDR4
DDR5 Value RDIMMs are designed to meet increasing needs for efficient performance in a wide range of applications including cloud computing and data center processing. The DDR5 specification provides developers with twice the performance (4.8 to 6.4 Gbps data rate) and improved power efficiency in comparison to DDR4 by using an on-DIMM 12V voltage regulator (PMIC) and 1.1 I/O Voltage.
加固型内存DDR4和DDR3内存模块
SMART提供一系列的DDR3和DDR4坚固型内存模块，这些模块经过从-40°C到+85°C的系统测试。SMART支持超过工业级温度范围的扩展温度范围，从-50°C到+105°C的环境温度。SMART严格的测试过程旨在确保这些加固型模块能够在恶劣、长寿命的计算环境中可靠运行。
SMART - 288-PIN - DDR5 NON-ECC UDIMM,262-PIN - DDR5 NON-ECC SODIMM,260-PIN - DDR4 ECC SODIMM,288-PIN - DDR5 ECC VLP UDIMM,216-PIN - DDR4 MIP,288引脚-DDR4 ECC ULP UDIMM,244-PIN - DDR3 ECC VLP MINI-UDIMM,DDR4 AND DDR3 MEMORY MODULES,288-PIN - DDR4 NON-ECC UDIMM,288-PIN - DDR5 RDIMM,244引脚-DDR3 ECC VLP微型UDIMM,288引脚-DDR4 ECC VLP微型UDIMM,240引脚-DDR3 VLP RDIMM,260引脚-DDR4 ECC SODIMM,240-PIN - DDR3 VLP RDIMM,288-PIN - DDR4 ECC ULP UDIMM,288-PIN - DDR4 VLP RDIMM,262引脚-DDR5非ECC SODIMM,288引脚-DDR5 ECC VLP UDIMM,DDR3 AND DDR4 RUGGED MEMORY MODULES,260-PIN - DDR4 NON-ECC SODIMM,204引脚-DDR3 ECC SORDIMM,288引脚-DDR4 VLP RDIMM,288-PIN - DDR5 ECC UDIMM,240引脚-DDR3非ECC UDIMM,262引脚-DDR5 ECC SODIMM,288引脚-DDR5 ECC UDIMM,204-PIN - DDR3 ECC SOUDIMM,240-PIN - DDR3 NON-ECC UDIMM,288引脚-DDR5 RDIMM,288引脚-DDR5非ECC UDIMM,262-PIN - DDR5 ECC SODIMM,244-PIN - DDR3 VLP MINI RDIMM,288-PIN - DDR4 ECC VLP MINI-UDIMM,204引脚-DDR3 ECC SOUDIMM,260引脚-DDR4非ECC SODIMM,288引脚-DDR4 RDIMM,288引脚-DDR4 ECC UDIMM,216引脚-DDR4 MIP,244引脚-DDR3 VLP微型RDIMM,288引脚-DDR4非ECC UDIMM,288-PIN - DDR4 ECC UDIMM,204-PIN - DDR3 ECC SORDIMM,204-PIN - DDR3 NON-ECC SODIMM,244-PIN - DDR3 ECC ULP MINI-UDIMM,204引脚-DDR3非ECC SODIMM,288-PIN - DDR4 RDIMM,DDR3和DDR4加固型内存模块,244引脚-DDR3 ECC ULP微型UDIMM,DDR4和DDR3内存模块,SRI4097SO420825-SB,SRI2G7SO5285-SB,STT5126MP451625MR,SPI1027SV351816NE,SPI5126SV351838SE,STI5126SO451893SF,STI1027SO410825SC,SPT2046SV310816GB,SRI2G7UD5285SB,SRI5126SO451625-SC,STI4097UD420825SCU,SRI4G6SO5285-SB,STT1026MP411625MF,SPI1026UV351816SE,STI2047SO410825SC,SRI4G8RD5285-SB,ST2047RD420825MF,SPI1027RV351838NEV,SPI5126SV325838NJ,SRI2047RD420425-SE,SRI4G7SO5285SB,STB4097SO420825SC,STI1026SO410825SC,STI2046SO410825MR,SRI2G7UD5285-SB,SPI1026SV351838SE,SPI5127SV351816NE,STI1027SO451893SF,STI4097UD420825SC,STT2566MP421625NE,SRI6G7UD5385MB,STI4097SO420825MF,SPI1026UV351838NE,SPI5126UV351838NE,SPI5127ML351816SEV,STI1027MU410872SCV,SRI4G7UD5285SBV,STI5127SO451893SF,STI2046UD410825-SE,SPI1027SL351816NE,STI2047RD420493SCV,SPI1027ML351816SEU,SRI4G7UD5285SB,STI2046SO410825SC,SRI4097RD420425-SE,SPI2566SV325838NJ,SRI8G8RD5445-SB,STI1026SO410825-SE,STI4097RD420825MF,STI1027UD410893SC,SPI5127SL351816SE,STI2047UD410825SC,SPI1026SV351816SE1,SRI2G7UD5285SBV,SRI1G6UD5165-SB,SRI2G6UD5285-SB,SRI2047RD410825-SE,SPI1027RV351816SEV,STI2047MU410872SCV,STT2566MP421625MG,SPI1027SL351816SE,SPI1026UV351838SE,SRI2G6SO5285-SB,STI4097SO420825SC,STI4096SO420825-HC,SRI1G6SO5165-SB,SPI5126UV351838SE,STI1026SO410893-SE,SPI5127SL351816NE,STI4097RD420493SC,SPI1027MV351816MPV,STI2047RD410893SC,SRI8197RD440425-SC,STI2047SO410814MR,STI2046SO410825-SE,SRI2G7SO5285SB,STI4096SO420825HC,SPI1027SV351816SE,SPI5127ML351816NEV,SRI4G6UD5285-SB,SPI5126SV351816SE1,SPI2567SO325838NJ,SRI4096SO420825-SC,SRI4G7UD5285-SB,STI1027RD451893SF,STI2046SO410893-SE,SPT2047SV310816GB,SPI5126SV351838NE,STI1026SO410825MR,SRI2G8RD5285-SB,STI1027RD410893SC,STI5126UD451893SF,SRI4G8RD5445-SB,SPI5127SV351816SE,STT4097RD420825MF,SPI1026SV351838NE,SERVER,安防,伺服器,手机,室外电信设备,安防应用,航空航天,信息亭,数字标牌,DENSELY CONFIGURED BLADE COMPUTING,工业计算,存储应用程序,DEFENSE APPLICATIONS,基站,DEFENSE,OUTDOOR TELECOM EQUIPMENT,高密度配置的刀片式计算,工业,BASE STATIONS,INDUSTRIAL COMPUTING,DIGITAL SIGNAGE,MOBILE,STORAGE APPLICATIONS,INDUSTRIAL,AEROSPACE,KIOSK
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