Enhancement-Mode Gallium Nitride Technology
●导言:
■颠覆性解决方案为最终产品差异化提供了一条新的途径。。。氮化镓是一种颠覆性的解决方案!
●在您的电源设计中,氮化镓FET和IC相对于硅的优势:
■更快的切换速度
■小号的
■更高的效率
■低成本
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
|
30
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0.745
|
0.23
|
0.14
|
0.42
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0
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86
|
67
|
20
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3.4
|
28
|
150
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BGA 0.85 x 1.2
|
Apr, 2017
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选型表 - EPC 立即选型
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