PROCESS CP712 Power Transistor PNP - Amp/Switch Transistor Chip
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工艺CP712功率晶体管PNP-Amp/开关晶体管芯片 |
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数据手册 |
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中文 英文 中英文 日文 |
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1-August 2002 |
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| 世强先进（深圳）科技股份有限公司 | |
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CENTRAL SEMICONDUCTOR - POWER TRANSISTOR DIE,POWER TRANSISTOR PROCESS,功率晶体管芯片,功率晶体管工艺,CZTUX87,CP250,CP250-CP250
PROCESS CP287 Power TransistorNPN - 8 Amp Power Transistor Chip
本资料介绍了Centrale Semi公司生产的CP287型号NPN型8安培功率晶体管芯片。该产品具有130x130毫米的晶圆尺寸，9.5毫米的晶圆厚度，适用于各种电子设备的高电流应用。
CENTRAL SEMICONDUCTOR - POWER TRANSISTOR DIE,POWER TRANSISTOR PROCESS,功率晶体管芯片,功率晶体管工艺,CP287-MJE13007,CP287,MJE13007
PROCESS CP285 Power Transistor NPN - Silicon Power Transistor Chip
本资料介绍了型号为CP285的硅功率晶体管芯片的技术细节。内容包括晶圆加工尺寸、金属化层厚度、基极和发射极焊盘面积等工艺参数，以及典型电学特性。
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本资料介绍了Centrale Semi公司的CP319功率晶体管芯片。该产品采用EPITAXIAL PLANAR工艺制造，具有87 x 87 MILS的晶圆尺寸和9.0 MILS的晶圆厚度。资料还提供了详细的工艺细节，包括基极和发射极焊盘面积、金属化层材料等信息。此外，资料列出了主要的设备类型和应用支持服务。
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CENTRAL SEMICONDUCTOR - POWER TRANSISTOR DIE,POWER TRANSISTOR PROCESS,功率晶体管芯片,功率晶体管工艺,CP268-BUY49S,BSW68,CP268,CP268-BSW68,BUY49S
PROCESS CP211 Power TransistorNPN - Amp/Switch Transistor Chip
本资料介绍了Centrale Semi公司的CP211系列NPN型功率晶体管芯片。该产品采用EPITAXIAL PLANAR工艺制造，具有典型的电气特性，适用于多种电子设备。
CENTRAL SEMICONDUCTOR - POWER TRANSISTOR PROCESS,功率晶体管芯片,POWER TRANSISTOR DIE,功率晶体管工艺,CP211,CP211-CJD41C,CP211-TIP41C,TIP41C,CP211-2N3054A,CJD41C,2N3054A
电子商城
品牌：Central Semiconductor
品类：Surface mount-MOSFET
价格：￥0.8136
现货： 16,000
现货市场
服务
提供CE测试服务，通过晶体回路匹配分析，给出测试报告。支持EPSON所有MHz无源晶体、32.768KHz晶体。支持到场/视频直播测试，资深专家全程指导。
实验室地址： 深圳/上海 提交需求>
支持GSM / GPRS 等多种制式产品的射频测试，覆盖所有上行和下行的各项射频指标，包括频差、相差、调制、功率、功控、包络、邻道泄漏比、频谱、杂散、灵敏度、同道干扰、邻道干扰、互调、阻塞等等。满足CE / FCC / IC / TELEC等主流认证的射频测试需求。
实验室地址： 深圳 提交需求>
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