MPGD10R7 VD MOSFET
●特性
■BVDSS=100V,ID=94 A
■RDS(ON):7.0mΩ(最大值)@VGS=10V
■RDS(ON):9.5mΩ(最大值)@VGS=4.5V
■N-通道,5V逻辑电平控制
■增强模式
■极低导通电阻RDS(on)@vgs=4.5V
■100%雪崩测试
MPGD10R7 VD MOSFET |
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数据手册,数据表,Data sheet |
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详见资料 |
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TO-252 |
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中文 英文 中英文 日文 |
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2018/7/30 |
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Ver1.0 |
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2.6 MB |
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世强硬创平台www.sekorm.com | |
世强硬创平台电子商城www.sekorm.com/supply/ | |
世强硬创平台www.sekorm.com | |
世强硬创平台www.sekorm.com |
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