SFS6010T2 60V, 7A Dual N-CHANNEL POWER MOSFET
●一般说明
■ SFS6010T2采用先进的沟槽技术和设计,以低结电容提供出色的RDS(on)。它可用于多种应用。
●特征
■VDS=60V,ID=7A
■RDS(打开)
◆典型值:33.5mΩ@VGS=10V
◆典型值:38.2mΩ@VGS=4.5V
SFS6010T2 60V、7A双通道N沟道功率MOSFET |
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数据手册,Datasheet |
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详见资料 |
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SOP8-8L |
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中文 英文 中英文 日文 |
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2022/2/18 |
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Rev 1.0 |
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983 KB |
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世强先进(深圳)科技股份有限公司 | |
世强硬创平台www.sekorm.com | |
世强硬创平台电子商城www.sekorm.com/supply/ | |
世强硬创平台www.sekorm.com | |
世强硬创平台www.sekorm.com |
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产品型号
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品类
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Package
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Channel
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VDS[max] (V)
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VGS(V)
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ID[max](25℃) (A)
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PD[25℃] (W)
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VGS(th)[min] (V)
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VGS(th)[max] (V)
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RDS(on)[typ] (@4.5V) (Ω)
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Ciss(typ)(pF)
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QG[typ](nC)
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SFS2302B
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中低压功率MOSFETs
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SOT-23-3L
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N
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20
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±10
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2.8
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0.35
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0.55
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1.2
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45
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286
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32.8
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