eGaN® FETs and ICs for Robotics and Drones MARKET BRIEF
●氮化镓的应用和好处
■DC-DC功率转换
▲更高的效率
▲重量更小/更轻
▲降低成本
■最新一代氮化镓器件提高了机器人系统中使用的直流电源系统的效率、缩小了尺寸并降低了系统成本。
■激光雷达/飞行时间(ToF)
▲更高的分辨率
▲增加的范围
▲重量更小/更轻
■氮化镓FET和IC能够具有非常高的开关频率(高达200MHz)和非常快的脉冲(<2ns),从而在ToF系统中获得优异的分辨率。
■BLDC电机
▲重量更小/更轻
▲更高的精度
▲减少EMI
■氮化镓FET和IC是机器人中使用的集成电机的理想选择,其VIN为48–100 VIN@10 A-40 A(500 W–2 kW)
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
|
QOSS typ (nC)
|
QRR(nC)
|
CISS (pF)
|
COSS (pF)
|
CRSS (pF)
|
ID(A)
|
Pulsed ID (A)
|
Max TJ (°C)
|
Package(mm)
|
Launch Date
|
EPC2040
|
Enhancement Mode Power Transistor
|
Single
|
15
|
6
|
30
|
0.745
|
0.23
|
0.14
|
0.42
|
0
|
86
|
67
|
20
|
3.4
|
28
|
150
|
BGA 0.85 x 1.2
|
Apr, 2017
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用于飞行时间/激光雷达应用的氮化镓场效应晶体管和集成电路简介
本文档介绍了eGaN® FETs和ICs在时间飞行/激光雷达系统中的应用。eGaN技术通过提供快速开关、高效率和紧凑尺寸,支持长距离和短距离激光雷达系统,实现更高分辨率、更远距离和更安全的应用。文档详细介绍了eGaN技术在激光雷达设计中的优势,包括高电流脉冲、窄脉冲宽度演示板和eToF™激光驱动器ICs。此外,还提供了推荐器件和配置信息,以支持不同类型的激光雷达系统。
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