AI总结

WM02P40M3 P-Channel MOSFET

发布时间： 2024-04-17 品牌： WAYON 资料类型：数据手册语言：英文

●特性
■VDS=-20 V，ID=-4.0 A
▲RDS（ON）<48mΩ@VGS=-4.5V
▲RDS（ON）<60mΩ@VGS=-2.5V
■出色的RDS（ON）
■低栅电荷、低栅电压
■ESD保护
●机械特性
■SOT-23-6L封装
■标记：制造代码
■RoHS兼容

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WAYON Small Signal MOSFETs选型表

选型表 - WAYON WAYON 提供Small Signal MOSFETs（小信号mosfet）/Multi-Channel Small Signal MOSFET（多通道小信号MOSFET）选型:VDS(V)：-150-120V，ID at 25℃(A)(Max.):-6~8.6,VGS(th)-(V)(Min.):-2~1.4.

产品型号

品类

Vgs Max(v)

Rds(on)Vgs=10V（mΩ）(Typ.)

Rds(on)Vgs=2.5V（mΩ）(Max.)

VGS(th)-(V)(Min.)

Rds(on)Vgs=4.5V（mΩ）(Max.)

Rds(on)Vgs=2.5V（mΩ）(Typ.)

ESD

Rds(on)Vgs=4.5V（mΩ）(Typ.)

Package

Rds(on)Vgs=10V（mΩ）(Max.)

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OVER-VOLTAGE PROTECTION DEVICES MV & LV MOSFET POWER MOSFET IC PRODUCTS

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WM01P41M P沟道MOSFET

2020/9/11 - 数据手册本资料介绍了Wayon公司的P-Channel MOSFET（增强型MOS场效应晶体管）WM01P41M的产品规格和应用信息。该器件具有低阈值电压、高导通电阻和SOT-23封装等特点，适用于各种电子电路。

WAYON - P通道MOSFET晶体管,P-CHANNEL MOSFET,WM01P41M

WM02P06H P沟道MOSFET

2020/4/27 - 数据手册本资料介绍了Wayon公司生产的WM02P06H型号的HP-Channel MOSFET。该器件具有低导通电阻、高密度PCB制造能力、适用于便携式设备的特点，采用先进的沟槽工艺技术，并具备ESD保护功能。资料提供了详细的电气特性、机械特性和封装信息。

WAYON - P通道MOSFET晶体管,P-CHANNEL MOSFET,WM02P06H

WM03P60M2 P沟道MOSFET

2020/8/25 - 数据手册本资料介绍了Wayon公司的P-Channel MOSFET（金属氧化物半导体场效应晶体管）WM03P60M2的产品规格和应用信息。该器件采用 trench MOSFET技术，具有低导通电阻和低栅极电荷的特点，适用于各种电子电路。

WAYON - P通道MOSFET晶体管,P-CHANNEL MOSFET,WM03P60M2

WM02P06G P沟道MOSFET

2023/5/25 - 数据手册本资料介绍了Way-On公司生产的WM02P06G型号的P沟道MOSFET。该器件采用 trench LV MOSFET技术，具有低导通电阻和良好的ESD保护特性。资料提供了详细的电气特性和热特性参数，包括最大额定值、静态特性、动态特性和开关特性等。

WAYON - P通道MOSFET晶体管,P-CHANNEL MOSFET,WM02P06G

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产品型号	品类	Configuration	VDS(V)	VGS(V)	Vth Typ(V)	RDS(ON) (mΩ) (Typ.)-4.5V	Cross Reference	充放电电流(A)	Package
WM02DN50M3	Dual N-Channel Enhancement Mode MOSFET	Dual NMOS	20	±12	0.7	18	CJL2019	1	SOT23-6L