PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz

PTAC240502FC热增强型高功率RF LDMOS FET

WOLFSPEED  -  热增强大功率射频LDMOS场效应管,THERMALLY-ENHANCED HIGH POWER RF LDMOS FET,ERJ-8GEYJ100V,EEE-FP1V101AP,CR0603-16W-12R1FB,PTAC240502FC,CR0603-16W-3010FB,PTAC240502FC-V1-R250,LTA/PTAC240502FC V1,UMK325C7106MM-T,060120A15Z50,PTAC240502FC V1,X3C25P1-05S,GRM32ER71H475KA88L,ATC800A180JT250T,PTAC240502FC-V1-R0

PXFE211507FC热增强高功率RF LDMOS FET 170 W，28 V，2110–2170 MHz数据表

PXFE211507FC是一款170瓦LDMOS场效应晶体管，适用于2110至2170 MHz频段的多元标准蜂窝功率放大器应用。该器件具有输入和输出匹配、高增益和热增强型封装等特点，采用Wolfspeed先进的LDMOS工艺制造，提供优异的热性能和可靠性。

WOLFSPEED  -  热增强大功率射频LDMOS场效应管,THERMALLY-ENHANCED HIGH POWER RF LDMOS FET,LTN/PXFE211507FC-V1,UMK325C7106MM-T,ATC600F0R4BT250XT,ECA-2AHG221,ATC600F100JT250XT,PXFE211507FC-V1-R2,ATC600F0R4AT250BT,PXFE211507FC-V1-R0,ATC600F0R6BT250XT,PXFE211507FC,ERJ-3GEYJ100V,ATC600F180JT250XT,MULTI- STANDARD CELLULAR POWER AMPLIFIER APPLICATIONS,多标准蜂窝功率放大器应用

PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz

该资料详细介绍了PXAC260602FC这款60瓦LDMOS FET的特性，适用于2620至2690 MHz频段的移动通信基站功率放大器。产品采用不对称设计，具有高增益和热增强型封装，采用Wolfspeed的先进LDMOS工艺制造，提供优异的热性能和可靠性。

WOLFSPEED  -  热增强高功率射频LDMOS FET 60 W，P3DB@28 V，2620–2690 MHZ,THERMALLY-ENHANCED HIGH POWER RF LDMOS FET 60 W, P3DB @ 28 V, 2620 – 2690 MHZ,PXAC260602FC,PXAC260602FC V1 R0,EEE-HB1H100AP,C16A5024,ERJ-8GEYJ200V,EEE-FP1V101AP,PXAC260602FC V1 R250,PXAC260602FC V1,PXAC260602FC-V1-R0,UMK325C7106MM-T,X3C25P1-05S,ATC800A180JT250T,PXAC260602FC-V1-R250,LTA/PXAC260602FC,ERJ-3GEYJ100V,MULTI-STANDARD CELLULAR POWER AMPLIFIER APPLICATIONS IN THE 2620 TO 2690 MHZ FREQUENCY BAND,2620～2690MHZ频段多标准蜂窝功率放大器的应用

【选型】Wolfspeed（科锐）RF射频产品选型指南

Wolfspeed（科锐）拥有无可匹敌的雄厚技术基础，对其材料供应采取了独一无二的垂直化管控， 并且不断投资扩大其现有基础设施与制造能力来实现SiC功率模块的推进。能够提供业界一流的功率产品和专用的SiC材料供应，这正是Wolfspeed（科锐）在 功率半导体产品世界长久植根，专业研究和知识产权组合的成果。

WOLFSPEED  -  MMIC POWER AMPLIFIER DIE,DISCRETE TRANSISTOR DIE,分立晶体管,射频功率晶体管,INTEGRATED RF POWER AMPLIFIERS,微波单片集成电路功率放大器,晶体管,MMIC POWER AMPLIFIERS,DISCRETE TRANSISTORS,RF POWER TRANSISTORS,微波单片集成电路功率放大器芯片,TRANSISTORS,射频产品,集成射频功率放大器,分立晶体管裸片,CGH27030P,CGH40045F,CGH27030S,PTRA083818NF,CGHV60040D,CGHV40050P,PTFB090901EA,CGH40045P,CMPA2735030D,CGH35030P,PXAC241002FC,CG2H40045F,CGH27030F,CGHV35060MP,CG2H40045P,PTVA047002EV,PTRA097008NB,CMPA0060025F,CMPA0060025D,PTVA035002EV,PXAC261212FC,CG2H80120D,PTFB211503FL,CGHV40050F,PXAE213708NB,CGH21120F,CGH40010F,G28V3,G28V4,PTFB210801FA,G28V5,GTVA261802FC,CMPA0060002F,CMPA0060002D,GTVA104001FA,PXAD184218FV,CGH35030F,CGH40035F,CGH40120F,CGHV96050F1,PTVA123501FC,CGHV14250P,CGH40035P,CGHV96050F2,PXAD214218FV,GTVA212701FA,PTAC210802FC,CMPA5259025F,PTFB091507FH,CGH40010P,PTFC210202FC,CMPA5585025D,CGHV14250F,CMPA5585025F,PTFB182503FL,PTVA123501EC,CMPA1D1E025F,PXFE181507FC,GTVA262711FA,PTMC210204MD,PTVA030121EA,CMPA1D1E025D,CGH25120F,PTVA104501EH,CGH40120P,PXAC241702FC,PXAE263708NB,CGHV40320D,CGHV27015S,CGHV1J025D,PTVA120252MT,PXAC260602FC,CMPA801B030F,CMPA801B030D,CGHV60075D5,CGHV40030P,CGH60030D,CGHV1F025S,CG2H40025F,PTVA082407NF,CGHV40030F,PTFC260202FC,PXFC192207FH,CG2H40025P,CG2H80015D,CGHV27060MP,PTFC262157FH,CGHV35120F,PTRA093818NF,GTRA364002FC,GTRA362802FC,CGHV60170D,PTVA043502EC,CMPA1C1D060D,CGH35240F,GTVA126001FC,PXFE211507FC,CG2H30070F,PTVA102001EA,PTRA093302FC,PXAC213308FV,CG2H40120F,PTVA043502FC,PTVA122501EC,CG2H40035F,PTRA087008NB,GTVA220701FA,CG2H40035P,CG2H40120P,CGH55030F,PTGA090304MD,CGH60008D,PTVA127002EV,GTVA355001FC,G40V4,CGHV14500P,PTVA120121M,CMPA901A035D,CMPA2060035F,CMPA2060035D,PXAE183708NB,CMPA901A035F,CG2H40010F,CGH55030P,PTFC270051M,CGHV50200F,CG2H40010P,CMPA601J025D,CGHV31500F,CGHV14500F,CG2H80060D,GTRA374902FC,PXAC182908FV,CGHV59350F,PTFC270101M,CGHV35400F,CGH55015P,PXFC191507FC,GTVA101K42EV-V1,GTRA384802FC,CGH27015F,PTRA094808NF,CGH35015F,PTFB093608FV,CGHV40200PP,CMPA5585030F,CMPA2735015D,PTVA120251EA,CGH27015P,CGH40006S,PTFB212503FL,CGH40006P,PTFB072707FH,CMPA5585030D,GTVA107001FC,G50V3,PTMC210124MD,PTRA094858NF,CGH27060P,CGH60060D,CGH35060F,CGH27060F,PXAC200902FC,CGH35060P,GTVA311801FA,PTFB192503FL,PXAC201602FC,PTMC210404MD,PTFC261402FC,PTVA101K02EV,CGHV27030S,CGH40090PP,PXAC203302FV,PTAC260302FC,PTVA042502FC,PXAC210552FC,PTVA092407NF,PTFB091802FC,CGHV35150F,CGH35015P,PTVA120501EA,PXAC192908FV,PTFB213004F,PTAC240502FC,CGHV35150P,CGH60015D,CGH31240F,CGHV59070P,CMPA0527005F,CGHV59070F,PTVA042502EC,GTVA263202FC,PXAC201202FC,PTNC210604MD,CGH40025F,CGH40025P,GTVA262701FA,PTRA084808NF,PTRA094252FC,PTVA084007NF,PTVA120151EA,GTRA262802FC,GTVA261701FA,PTFB201402FC,CGHV1J070D,CGHV40180P,CGH09120F,CMPA2735075D,CGH09120P,CMPA2735075F,CG2H80030D,CGHV40100F,CGHV40100P,CGHV40180F,PXAC182002FC,CGH21240F,GTRA263902FC,CGH40180PP,PTRA082808NF,CMPA601C025F,CMPA601C025D,GTRA362002FC,CGHV14800F,PXAC243502FV,CGHV1J006D,PXAC261002FC,CGHV96100F2,GTVA123501FA,PTFB092707FH,CMPA2560025D,CMPA801B025F,CGHV1F006S,CMPA2560025F,CMPA801B025D,PTFB090901FA,CMPA5259050F,CGH60120D,CGHV37400F,CGH55015F,感应加热,变频,电源,充电桩,电动汽车,伺服,光伏,新能源

PTAC240502FC热增强高功率射频LDMOS FET 50 W，28 V，2300–2400 MHz

PTAC240502FC是一款由Wolfspeed制造的47瓦LDMOS FET，专为2300至2400 MHz频段的多元标准蜂窝网络功率放大器应用设计。该器件具有不对称设计，包括双路径设计、输入匹配、高增益和带无耳法兰的热增强封装。PTAC240502FC采用Wolfspeed先进的LDMOS工艺制造，提供优异的热性能和可靠性。

WOLFSPEED  -  热增强高功率射频低密度半导体场效应晶体管50瓦，28伏，2300-2400兆赫,THERMALLY-ENHANCED HIGH POWER RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHZ,ERJ-8GEYJ100V,EEE-FP1V101AP,CR0603-16W-12R1FB,PTAC240502FC,CR0603-16W-3010FB,PTAC240502FC V1 R0,PTAC240502FC-V1-R250,UMK325C7106MM-T,060120A15Z50,LTA/PTAC240502FC,X3C25P1-05S,PTAC240502FC V1,GRM32ER71H475KA88L,ATC800A180JT250T,PTAC240502FC V1 R250,PTAC240502FC-V1-R0,2300～2400MHZ频段多标准蜂窝功率放大器的应用,MULTI-STANDARD CELLULAR POWER AMPLIFIER APPLICATIONS IN THE 2300 TO 2400 MHZ FREQUENCY BAND

PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET330 W, 28 V, 1880 – 2025 MHz

WOLFSPEED  -  THERMALLY-ENHANCED HIGH POWER RF LDMOSFET,热增强大功率射频LDMOSFET,THERMALLY-ENHANCED HIGH POWER RF LDMOSFET TEST FIXTURE,热增强大功率射频LDMOSFET测试夹具,ATC600F1R6BT250XT,X3C19P1-05S,LTA/PXAC203302FV-V1,PXAC203302FV V1 R250,ATC600F6R8BT250XT,ATC600F2R7BT250XT,PXAC203302FV-V1-R0,SK221M050ST,UMK325C7106MM-T,PXAC203302FV-V1,ATC600F1R0BT250XT,ATC600F0R5BT250XT,ATC600F0R3BT250XT,PXAC203302FV,ATC600F0R8BT250XT,C16A50Z4,LTA/PXAC203302FV,ATC600F150JT250XT,ERJ-3GEYJ100V,PXAC203302FV V1 R0,PXAC203302FV-V1-R250,USE IN MULTI-STANDARD CELLULAR POWER AMPLIFIER,在多标准蜂窝功率放大器中的应用

PXAD214218FV Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

PXAD214218FV是一款430瓦（P3dB）的LDMOS FET，设计用于2110至2170 MHz频段的多元标准蜂窝功率放大器应用。该器件具有不对称设计，包括双路径设计、输入和输出匹配、高增益和热增强封装。采用Wolfspeed的先进LDMOS工艺制造，提供优异的热性能和可靠性。

WOLFSPEED  -  热增强高功率射频LDMOS FET 430 W，28 V，2110–2170 MHZ,THERMALLY-ENHANCED HIGH POWER RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHZ,ATC800A1R2CT250T,ATC800A0R3CT250T,PXAD214218FV-V1-R0,PXAD214218FV-V1-R2,ATC800A0R4CT250T,ERJ-8RQJ5R6V,LTA/PXAD214218FV,PXAD214218FV,ATC800A0R5CT250T,UMK325C7106MM-T,PXAD214218FV V1 R0,EEE-FP1V221AP,X3C21P1-04S,PXAD214218FV V1 R2,ATC800A180JT250T,C16A50Z4,PXAD214218FV V1,MULTI-STANDARD CELLULAR POWER AMPLIFIER APPLICATIONS IN THE 2110 TO 2170 MHZ FREQUENCY BAND,2110～2170MHZ频段多标准蜂窝功率放大器的应用

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz

PXAC261002FC是一款100瓦LDMOS FET，专为2496至2690 MHz频段的多元标准蜂窝功率放大器应用设计。该器件采用不对称设计，具有双路径设计、高增益和热增强包装，制造采用Wolfspeed的先进LDMOS工艺，提供卓越的热性能和可靠性。

WOLFSPEED  -  THERMALLY-ENHANCED HIGH POWER RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHZ,热增强高功率射频低密度半导体场效应晶体管100瓦，28伏，2490–2690兆赫,ATC800A120KT250T,PXAC261002FC V1 R0,PXAC261002FC V1 R250,EEE-FP1V221A,ATC800A0R4CT250T,ATC800A0R5CT250T,PXAC261002FC V1,X3C26P1-03S,UMK325C7106MM-T,PXAC261002FC-V1-R0,ATC800A180JT250T,ATC800A0R6CT250T,ATC800A120JT250T,LTA/PXAC261002FC,C16A50Z4,ATC800A3R9CT250T,PXAC261002FC-V1-R250,ATC800A1R6CT250T,PXAC261002FC,ERJ-3GEYJ100V,2496～2690MHZ频段多标准蜂窝功率放大器的应用,MULTI-STANDARD CELLULAR POWER AMPLIFIER APPLICATIONS IN THE 2496 TO 2690 MHZ FREQUENCY BAND

栅极驱动器模块和评估板展现了Wolfspeed，Inc.的性能碳化硅功率模块

本资料为Wolfspeed, INC. SiC功率模块的解决方案指南，介绍了SiC功率模块的应用领域、门驱动模块的特点、产品线及评估板。内容包括SiC功率模块在电机控制器、逆变器、光伏、风力发电等领域的应用，门驱动模块的低阈值电压、短路容忍度、高频操作等特点，以及2CG-B系列门驱动模块和2RB020BB评估板的具体信息。

TAMURA  -  GATE DRIVER MODULE,栅极驱动器模块,SIC功率模块,评估板,EVALUATION BOARD,SIC POWER MODULE,2CG010BBC11N,CAS300M12BM2,2CG010BBC13N,CAS300M17BM2,2CG-B SERIES,2CG010BBC12N,2CG010BBC15N,CAS175M12BM3,2CG010BBC14N,CAB530M12BM3,CAS350M12BM3,2CG-B,2DD,CAS530M12BM3,2RB020BB,2DD1504XXC,CAS120M12BM2,WIND,INVERTER,机器人学,电机控制器,EV充电器,WELDING,网格,SVG,PV,GRID,EV STAND,ROBOTICS,风,逆变器,SVG格式,MOTOR CONTROLLER,STORAGE,电动汽车支架,EV CHARGER,焊接,不间断电源,UPS,存储器

1200V高温（125°C）半桥SiC MOSFET栅极驱动器数据手册（适用于Wolfspeed XM3电源模块）

本资料为CMT-TIT0697型半桥SiC MOSFET栅极驱动器数据手册。该产品专为 Cree Wolfspeed CAB450M12XM3 1200V/450A SiC MOSFET 功率模块设计，具有高温度（125°C）工作范围、低寄生电容、隔离电压高等特性。

CISSOID  -  HALF-BRIDGE GATE DRIVER BOARD,半桥栅极驱动板,高温半桥SIC MOSFET栅极驱动器,HIGH TEMPERATURE HALF- BRIDGE SIC MOSFET GATE DRIVER,CMT0697,CMT-TIT0697A,CMT-TIT0697