CP353V-CZT853 NPN - High Current Transistor Die
CP353V-CZT853是为大电流应用而设计的硅NPN晶体管。
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CP353V-CZT853、CP353V-CZT853-CT、CP353V-CZT853-CM、CP353V-CZT853-WN、CP353V-CZT853-WR |
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[ 大电流应用 ] |
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数据手册 |
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详见资料 |
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中文 英文 中英文 日文 |
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6-June 2016 |
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559 KB |
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| 世强先进（深圳）科技股份有限公司 | |
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本资料介绍了Centrale Semi公司的CP304V小信号晶体管芯片。该产品采用EPITAXIAL PLANAR工艺制造，具有高电流处理能力。资料提供了生产工艺细节、晶圆尺寸、基板和发射极焊盘面积、金属化层厚度等信息。
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本资料介绍了Centrale Semi公司的CP219功率晶体管，这是一种高电流NPN型晶体管芯片。资料详细说明了该产品的制造工艺细节，包括晶圆加工过程、器件尺寸和金属化层等信息。此外，还提供了典型电学特性数据。
CENTRAL SEMICONDUCTOR - POWER TRANSISTOR PROCESS,功率晶体管芯片,POWER TRANSISTOR DIE,功率晶体管工艺,CP219-2N5430,CP219-2N5336,CP219-D44H11,CP219-2N5338,CP219-2N5337,2N5337,2N5338,2N5336,2N5430,CJD44H11,2N5429,2N5339,2N5427,2N5428,CP219,CP219-2N5428,CP219-2N5339,CP219-2N5427,CP219-CJD44H11,D44H11,CP219-2N5429
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品牌：Central Semiconductor
品类：Surface mount-MOSFET
价格：￥0.8136
现货： 16,000
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可定制烧结NdFeB磁铁的剩磁最高1.45T，易加工成各种尺寸。充磁方向：径向充磁、轴向充磁、辐射充磁等；镀层：Zn、Sn、Ni、电泳等，最高工作温度220℃。
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