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Magnetic shielding of MRAM? Does Netsol take measures such as shielding the MRAM chip or package? Do I have to consider any extra shielding in my product?
Netsol does nothing about the shielding because it’s not required. So you don’t have to take any extra effort for shielding issue.
How can I increase the magnetic field at which the sensor module starts to saturate?
There are 2 sources of magnetic saturation: the Integrated Magnetic Concentrator (IMC) itself, and the ferromagnetic shield. The former is selectable as an option code, and is in fact recommended by the current sensor simulator. The latter is mainly defined by the thickness of the shield. The current sensor simulator selects among a set of fixed dimensions, aiming at standardization. Increasing the thickness of the shield will significantly drive the saturation level up.
Merits of toroidal-type magnetic bodies
Compared to a solenoid coil, the merit of a toroidal-type magnetic body is its ability to produce large inductance under the same conditions.Compared to a solenoid coil wrapped, which is a bar-shaped magnetic body with a conductive wire wound around it, the magnetic flux of a toroidal coil, which is a magnetic body with a closed loop, is confined within the core, so almost no magnetic flux leaks outside the core.
What are Nanocrystalline Magnetic Materials?
Nanocrystalline are soft magnetic materials that have nano-sized crystals in amorphous alloys.
我想买几块板材，用来做实验，我在电脑上仿真时设置的板材介电常数为定量值，我想咨询下下面的几种板材是否有铜，覆铜的话是否会改变板材整体的介电常数。
你好，截图上的三个型号都是有铜的，第一个铜箔类型为反转铜，后面两个铜箔类型为电解铜，具体参数参考规格书：https://www.sekorm.com/product/307269.htmlhttps://www.sekorm.com/product/307294.htmlhttps://www.sekorm.com/product/40119.html覆铜对板材的介电常数的影响很小，对板材整体的介电常数影响不大。
需求系统级蓝牙芯片用于智能手表项目，拜托推荐一个国产性价比高的，谢谢
推荐世强代理汇顶科技的GR5513BENDU The Goodix GR551x family is a single-mode, low-power Bluetooth 5.1 System-on-Chip (SoC). It can be configured as a Broadcaster, an Observer, a Central, or a Peripheral and supports the combination of all the above roles, making it an ideal choice for Internet of Things (IoT) and smart wearable devices. CPU Cortex®-M4F64M RAM 128 KB Flash 4 Mbit 详情参考：https://www.sekorm.com/product/845828.html
NETSOL SRAM产品选型指南
Asynchronous Low Power SRAM Asynchronous FAST SRAM Synchronous SRAM DDR SRAM QDR SRAM
NETSOL - SYNCHRONOUS FLOW THROUGH SRAM,NT直通式SRAM,异步低功耗SRAM,NT管道突发SRAM,QDR SRAM,NT FLOW THROUGH SRAM,同步SRAM,ASYNCHRONOUS FAST SRAM,SYNCHRONOUS PIPE BURST SRAM,DDR SRAM,同步管道突发SRAM,ASYNCHRONOUS LOW POWER SRAM,NT PIPE BURST SRAM,异步快速SRAM,SYNCHRONOUS SRAM,同步直通式SRAM,S7K1618U2M,S6L8016W2M,S6R8008C1A,S6LXXXXXXX-PTSS,S7R320982M,S7K6418U2M,S6RXXXXXXX-PTSS,S7B163635M,S7M323635M,S6R3216W1M,S7R161882M,S6R2008C1A,S6R1608W1M,S7S6418U4M,S6L8016W1M,S7A641830M,S7M803635M,S7L3218U2M,S7S1618U4M,S7Q163664M,S7R163682M,S6L2016W1M,S7N321831M,S7R641884M,S6R1616C1M,S7S6436U4M,S6R1016C1A,S7M401835M,S7R320984M,S6L8008C2M,S6R8016W1A,S7Q161864M,S7R161884M,S7M801835M,S7S1636U4M,S7A161830M,S7S4436T4M,S7K6418T2M,S7N801831M,S7K1636U2M,S7I321882M,S6L1008C2M,S7J161882M,S6L2016W2M,S7S6418T4M,S7B643635M,S7A403630M,S6L2008C2M,S6R4008V1A,S7K6436U2M,S7S6436U2M,S7J641882M,S7S1618T4M,S7Q163662M,S7R641882M,S6L4016C2M,S7I643684M,S7T6436T4M,S7R441884M,S7L3236T2M,S7T1636T4M,S7S4436U4M,S7K3236T2M,S7N323631M,S6L1016W1M,S7I161884M,S7Q161862M,S7S3236T4M,S7T3236U4M,S7S4418T4M,S6R1008W1A,S6R2016C1A,S7M641835M,S7T3218T4M,S7M161835M,S7J323682M,S7I163684M,S6R4008W1A,S7R323682M,S7XXXXXXXX-ETSS,S7I643682M,S6L4008W1M,S7B641835M,S7K1618T2M,S7R441882M,S6R2008V1A,S6L8016C1M,S7L3236U2M,S7S4436U2M,S7XXXXXXXX-PTSS,S7S6418U2M,S6R1608V1M,S7A803630M,S7N803631M,S6R1008V1A,S7S4418U4M,S7B161835M,S7I641884M,S7A323630M,S6R4016C1A,S7L3218T2M,S7T3218U4M,S7R323684M,S7I163682M,S7B323635M,S6R2008W1A,S7B803635M,S7N403631M,S7L6418U2M,S6R1616V1M,S6R8008W1A,S7R321882M,S7S3236U2M,S7S4418U2M,S7R640982M,S6L8016C2M,S6R3208W1M,S7M643635M,S6R1608C1M,S7A801830M,S7L6436U2M,S7I641882M,S7S3218U4M,S7L1618U2M,S7A321830M,S7T6436T2M,S7T6436U4M,S7J321882M,S6R1016W1A,S7K3236U2M,S7T1636U4M,S6L2008W2M,S7T4436T4M,S6R8016C1A,S6R1616W1M,S7N641831M,S7R321884M,S7I161882M,S7B401835M,S7S3236U4M,S6L4016C1M,S7T3236T4M,S7M163635M,S6L1008W2M,S6L2008W1M,S6L8008W2M,S7L6436T2M,S7S3218T4M,S7N161831M,S6R1008C1A,S7S6436T4M,S7B403635M,S7R443682M,S7I321884M,S7M403635M,S7S1636T4M,S7T4436T2M,S7T4436U4M,S6R1016V1A,S6L4016W1M,S7R643684M,S7K1636T2M,S7N163631M,S7L1636T2M,S7T4418U4M,S7T6418T4M,S6R4008C1A,S7T4418T2M,S6R4016V1A,S6L4008C1M,S6L2016C1M,S7K6436T2M,S6L4016W2M,S7K3218T2M,S7I323684M,S7T1618T4M,S7J163682M,S6R2016W1A,S7J643682M,S7M321835M,S7R443684M,S7B801835M,S7L6418T2M,S7A643630M,S7A401830M,S7L1636U2M,S7R643682M,S7A163630M,S7T6418T2M,S7T4418T4M,S7T6418U4M,S7B321835M,S6L1016C1M,S6R4016W1A,S7N643631M,S7R163684M,S7T1618U4M,S7S3218U2M,S7N401831M,S7L1618T2M,S7K3218U2M,S7I323682M,S6R2016V1A,S7R440982M
NETSOL product 停产通知
NETSOL宣布停产多款Asynchronous Low Power SRAM和Asynchronous Fast SRAM产品，涉及多个型号，包括S6L2016W1M-UI55至S6R8016W1A-UI10等。
NETSOL - ASYNCHRONOUS LOW POWER SRAM,ASYNCHRONOUS FAST SRAM,异步低功耗SRAM,异步快速SRAM,S6R8016W1A-UI10,S6R1616W1M-XI10,S6R1016W1A-UI10,S6R1016V1A-UI10,S6L1016W1M-UI55,S6L4008C1M-LI55,S6R2016W1A-UI10,S6R4008W1A-UI10,S6R2016V1A-UI10,S6L8008C2M-UI55,S6R4008V1A-UI10,S6L8016W1M-UI55,S6R4016W1A-XI10,S6R1008V1A-LI10,S6R1616V1M-YI10,S6L4016W1M-UI55,S6R1616W1M-YI10,S6L2008W2M-LI55,S6L4008W1M-LI55,S6R4008C1A-UI10,S6L1008C2M-LI55,S6R3216W1M-XI10,S6R4016W1A-UI10,S6R4016V1A-UI10,S6R2008W1A-UI10,S6L2016W1M-UI55
瑞萨标准SRAM产品概要
本资料由Renesas Electronics Corporation提供，概述了其标准SRAM产品线。内容包括不同类型的SRAM产品，如低功耗SRAM、异步快速SRAM、同步SRAM、多端口SRAM、FIFO、MRAM、EEPROM和SPI NOR Flash。资料还介绍了Renesas SRAM的优势，包括高可靠性、稳定的供应链和长期支持、广泛的系列以支持所有应用。此外，还提供了产品路线图、产品规格、技术挑战、软错误对策、技术比较和产品差异化信息。
RENESAS - 低功耗SRAM,同步SRAM,RENESAS STANDARD SRAM,LOW POWER SRAM,ASYNCHRONOUS FAST SRAM,瑞萨标准SRAM,异步快速SRAM,SYNCHRONOUS SRAM,RMLV1616AGSD-5S2#AA1,R1LP0108E,R1RP0408D-I,RMLV1616A-S,R1LV0108E,RMLV1616AGSA-5U2,RMLV1616A-U,R1LV0216BSB,RMWV6416A SERIES,R1LP0408DSP-5SI#B1,RMWV6416A,RMLV1616AGBG-5S2,RMLV1616A-U SERIES,RMLV1616A-S SERIES,RMLV1616A,R1LV5256E,RMLV1616AGSD-5S2,RMLV1616AGSA-5U2#AA0,RMLV1616AGBG-5U2#AC0,RMLV0408E,RMLV1616AGBG-4U2,RMLV1616AGSA-5U2#KA0,R1LP0408D,RMLV0416E,R1LV1616H SERIES,RMLV1616AGSA-5S2#KA0,R1RP0416D-I,R1RW0408D-I,RMLV0816BGBG,RMLV1616AGSD-5S2#HA1,RMLV1616AGBG-5U2#KC0,RMLV3216A,R1RW0408D-R,R1LV0208BSA,RMLV0816BGSB,R1RW0416DSB-2PI#D1,RMLV1616AGBG-4U2#AC0,RMLV0816BGSA,R1LV5256ESA-5SI#B1,RMLV0808BGSB,RMLV1616AGSA-4U2,RMLV1616AGSA-5S2,RMLV1616AGBG-5S2#AC0,RMLV0816BGSD,R1RP0416D-R,RMLV1616AGBG-5S2#KC0,RMLV1616AGSA-4U2#KA0,RMLV1616AGBG-4U2#KC0,RMLV1616AGSA-4U2#AA0,RMLV0416EGSB-4S2#AA1,RMLV1616AGSA-5S2#AA0,R1LV1616H,R1LP5256E,RMLV0414E,R1RW0416D-I,RMWV3216A,R1RW0416D-R,RMLV3216A SERIES,RMLV1616AGBG-5U2,R1RP0408D-R,医学,保健,办公自动化,通讯,INDUSTRIAL,汽车配件,SOCIAL INFRASTRUCTURE,社会基础设施,OFFICE AUTOMATION,CONSUMER,HEALTHCARE,MEDICAL,消费,NON-DRIVELINE DEVICES,工业,非动力传动系统装置,COMMUNICATION,CAR ACCESSORIES
NETSOL产品列表
该资料详细列出了NETSOL公司提供的多种类型的SRAM产品，包括异步快速SRAM、异步低功耗SRAM、STT MRAM、同步SRAM等。产品涵盖了不同的密度、组织结构、封装类型和速度等级。资料中还包括了产品的电压、访问时间、封装类型和可用性等信息。
NETSOL - 同步SRAM,STT MRAM,ASYNCHRONOUS LOW POWER SRAM,ASYNCHRONOUS FAST SRAM,异步低功耗SRAM,异步快速SRAM,SYNCHRONOUS SRAM,S7B323635M,S6R1008C1A,S6L8016W2M,S6R8008C1A,S3R2008V1M,S7B403635M,S6R2008W1A,S7B803635M,S7M403635M,S7N323631M,S7B163635M,S7N403631M,S6R1016V1A,S7M323635M,S6L1016W1M,S6L4016W1M,S6R1616V1M,S6R8008W1A,S6R2008C1A,S7N163631M,S6L8016W1M,S3R8016V1M,S6R1008W1A,S6R2016C1A,S6R4008C1A,S7M803635M,S6R4016V1A,S3R1008V1M,S7A801830M,S7M161835M,S3R3208V1M,S6L4016W2M,S3R1608V1M,S6R2016W1A,S6R4008W1A,S3A3204R0M,S3R4008V1M,S7A321830M,S6L2016W1M,S3R2016V1M,S7N321831M,S6R1616C1M,S3A3204V0M,S6R1016C1A,S3A4004R0M,S7M321835M,S7M401835M,S6R8016W1A,S7B801835M,S6R2008V1A,S6R1016W1A,S7M801835M,S7A161830M,S6R8016C1A,S3R8008V1M,S3A1604R0M,S7N801831M,S6R1616W1M,S7A401830M,S3A1004V0M,S3A4004V0M,S3A1604V0M,S3A1004R0M,S7B401835M,S6L2016W2M,S3R1616V1M,S3R1016V1M,S7A803630M,S7A163630M,S7N803631M,S7M163635M,S6R1008V1A,S7B321835M,S3A2004V0M,S6R4016W1A,S7A403630M,S3R3216V1M,S3A8004R0M,S6L8008W2M,S3R4016V1M,S7B161835M,S3A2004R0M,S3A8004V0M,S6R4008V1A,S7A323630M,S7N401831M,S6R4016C1A,S7N161831M,S6R2016V1A
MRAM技术指南
本文介绍了Freescale的磁阻随机存取存储器（MRAM）技术。MRAM结合了磁性存储元件和标准CMOS逻辑工艺，实现了高密度、低成本、非易失性、快速读写和无限读写寿命等优点。文章详细解释了MRAM的工作原理、结构、存储机制以及与CMOS工艺的集成方式。此外，还比较了MRAM与其他存储技术的优缺点，并展望了MRAM在未来的应用前景。
NXP - 记忆产品,EMBEDDED MEMORY,磁阻随机存取存储器（MRAM）产品,MRAM,毫米,MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) PRODUCTS,嵌入存储器,MEMORY PRODUCT
Which packages are supportive?
8WSON, 8SOIC, 44TSOP2, 54TSOP2, 48FBGA and 48TSOP1 are available. Detail package information is explained in each product’s datasheet. For example, in 16Mb Parallel STT-MRAM’s datasheet, you can check 44TSOP2 (10㎜ x 18㎜) and 48FBGA (6㎜ x 8㎜) package are available for X8 organization and 54TSOP2 (10㎜ x 18㎜) and 48FBGA (6㎜ x 8㎜) packages are available for X16 organization.
One-RenesAsMemory解决方案：为工业和通信应用提供最佳内存组合
Renesas Memory Solutions提供针对工业和通信应用的优化内存组合。产品包括低功耗、高速的SRAM，用于解决芯片间通信协议问题，如速率匹配、缓冲和总线匹配。此外，还提供多端口内存、FIFO、MRAM、EEPROM和SPI NOR Flash等产品。资料详细介绍了各种内存类型的产品特性和应用领域，如工业控制、通信、医疗和消费电子等。
RENESAS - 低功耗SRAM,毫米,FIFO逻辑产品,FIFO LOGIC PRODUCTS,SYNCHRONOUS SRAM SPECIALTY MEMORY,SPI NOR FLASH,NVSRAM,SRAM,闪光,EEPROM,故障估计机,MRAM,LOW POWER SRAM,非易失性静态随机存取存储器,电可擦可编程只读存储器,FRAM,SPI NOR闪存,DRAM,ASYNCHRONOUS FAST SRAM,FLASH,同步SRAM专用存储器,异步快速SRAM,M1008204,M3016-EVK,M1016204,M3004204,M3016316,M1004204,M3004316,M3032316,M3008316,M3008204,M3016204,INDUSTRIAL ROBOT,ELECTROENCEPHALOGRAPH,INDUSTRIAL CONTROL,医疗/保健,AIRCRAFT MISSION RECORDER,燃气传感器,PRINTER,ROBOTICS,OFFICE AUTOMATION,SEMICONDUCTOR EQUIPMENT,CONSUMER,飞行控制,多功能打印机,飞机任务记录器,MEDICAL APPLICATIONS,CAR ACCESSORIES,MEDICAL RECORDER,办公自动化,路由器,INDUSTRIAL MONITORING,打印机,数据交换机,超声波,INDUSTRIAL CONTROLS,BREWERY CONTROLS,脑电图机,SOCIAL INFRASTRUCTURE,手术器械,CELL PHONE TESTER,手机测试器,VIDEO CONFERENCE SYSTEM,HEARING AIDS,GAS SENSOR,MULTIFUNCTION PRINTERS,消费,COMMERCIAL AVIONICS,自动取款机,医用记录仪,数据驱动器,通讯,机器人焊接,INDUSTRIAL,声纳,FLIGHT CONTROL,社会基础设施,电机驱动控制器,PC FOR RAILWAY SYSTEM,电梯控制,SURGICAL INSTRUMENT,半导体设备,铁路系统用PC,MEDICAL / HEALTHCARE,ULTRASOUND,ROUTERS,ROBOTIC WELDING,工业,COMMUNICATION,机器人学,啤酒厂控制,工业控制,助听器,密度计,SONAR,医学应用,工控,工业监控,ELEVATOR CONTROLS,视频会议系统,汽车配件,DATA SWITCHES,工业机械手臂,DATA DRIVES,DENSITOMETER,MOTOR DRIVE CONTROLLER,REPEATER,ATM,商用航空电子设备,中继器
外磁场对MRAM产品应用的影响
本资料探讨了外部磁场对Freescale MRAM产品性能的影响。内容涵盖磁场来源、强度及其对MRAM性能的影响，以及Freescale MRAM产品的磁场防护措施。资料还介绍了磁场测量和计算方法，以及政府相关标准。
NXP - MR2A16A
Applications of MRAM? I work in a specific field and it's not easy to match the given applications with mine. How can I check Netsol's MRAM is suitable for my application?
The given applications of Netsol’s homepage is just several examples verified by Netsol and Netsol’s customers. Netsol’s STT-MRAM has advantages of low power consumption, various density, fast read/write speed and price competitiveness. With those advantages, Netsol’s STT-MRAM can be applied to any applications with which other memories like MRAM/FeRAM/SRAM/NOR flash/nvSRAM are currently used.
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现货： 5,590
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