【应用】国产总线通讯微型防雷模组UNSRS485-2HL用于UPS电源,反应速度<1ns
UPS电源需要用到RS485总线通讯方式来传输电压、电流等参数;随着RS485总线通讯对数据传输速率的要求越来越快,对浪涌防护等级的要求也越来越高。
某客户在做一款3KVA的小功率UPS电源,采用传统的防雷解决方案会用到485通讯方式来上传数据,传统的总线通讯RS485会分两级做过压、雷击、浪涌防护,初级选用通流能力较高的陶瓷气体放管(GDT),中间用电阻或者自恢复保险丝(PPTC)做退藕元件,次级选用回应速度快、防护精准的瞬态抑制二极管(TVS),方案框图如下图所示。
图一 RS485差共模两级组合防护方案
本方案中的退藕元器件(电阻或者自恢复保险丝)在模拟雷击浪涌测试过程中会出现自恢复保险丝常态阻值发生较大的改变或者电阻损坏的现象,进而影响正常的通讯;TVS管电容值较高,由于TVS的结电容较高(2~3nF左右),在总线上带载多路收发器时,存在信号失真,影响485总线通信速率和可靠性;传统设计方案使用元器件较多,占用较大面积的PCB。
基于传统方案应用上的缺点,本文推荐了优恩半导体推出的RS485差共模微型防雷模组方案,以下是RS485差共模微型防雷模组方案框图:
图二 RS485差共模微型防雷模组方案
图三 微型RS485总线通讯防雷模组图片尺寸
总线通讯微型防雷模组UNSRS485-2HL用于UPS电源的主要优势有以下几点:
1、产品做到模块化、微型化,简化产品开发周期,节约前端防护电路所占用的PCB面积;
2、设计使用元器件少,可靠性、稳定性高;
3、反应速度快(<1ns);高抗电磁干扰(EMI),具有低容值、低漏流等特性,符合UPS电源总线通讯越来越快速的信号传输要求;
4、高低温特性好,使其适用与各种工业级产品;高能型产品符合IEC61000-4-5 3KA/6KV(8/20μs、1.2/50μs组合波)的雷击浪涌防护等级;
5、国内电源市场应用案例较多,且性价比和交期相较于国外大厂有优势。
综上所述,优恩半导体推出的RS485差共模微型防雷模组UNSRS485-2HL非常适用于UPS电源。
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描述- 本资料介绍了UN半导体公司的迷你型雷击保护模块——UNSRS485-2L。该模块专为RS485接口设计,具有低电容、快速响应时间等特点,适用于各种电子设备中的防雷保护。
型号- UNSRS485-2L
高能RS485小型雷电模块UNSRS485-2H指令
描述- 该资料介绍了UN Semiconductor公司生产的UNSRS485-2H型号的RS485迷你型雷击保护模块。该模块具备3KA/6KV的雷击浪涌保护能力,具有低钳位电压、低泄漏电流、快速响应(<1ns)等特点。模块尺寸小巧,适用于PCB板节省空间。资料还提供了模块的命名规则、技术数据、设计参考、尺寸规格和引脚功能等信息。
型号- UN3E5-90LM,UNSRS485-2H,UN485E,UN3E5-90LSMD,SMBJ6.0CA
UNRS485-2H高能RS485微型雷电模块指令
描述- 本资料介绍了UN Semiconductor公司生产的UNSRS485-2H型号的RS485微型雷击保护模块。该模块具备3KA/6KV的雷击浪涌保护能力,具有低残余电压、低泄漏电流、快速响应(<1ns)等特点。模块采用模块化设计,体积小巧,适用于PCB板节省空间。资料还提供了模块的尺寸、命名规则、设计参考以及引脚功能等信息。
型号- UNSRS485-2H
优恩半导体TVS瞬态电压抑制二极管选型表
优恩半导体提供以下技术参数的TVS选型:反向截止电压:3.3V~440V;击穿电压(min):5.2V~492V;击穿电压(max):6V~543V;测试电流:1mA、5mA、10mA;最大钳位电压 VC @IPP (V):8V~713V;最大峰值脉冲电流IPP (A):0.56A~3000A;最大反向漏电流IR @VRWM (μA):1uA~1000μA;关断电压:10V~85V;最大反向浪涌电流IPP(A):48A~388A;最大IR @VRWMTJ=175(uA):150uA、250uA。
产品型号
|
品类
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Reverse Stand-Off Voltage VRWM(V)
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Breakdown Voltage VBR (V) @IT MIN
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Breakdown Voltage VBR (V) @IT MAX
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Test Current IT (mA)
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Maximum Clamping Voltage VC @IPP (V)
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Maximum Peak Pulse Current IPP (A)
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Maximum Reverse Leakage IR @VRWM (μA)
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model
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8KP24A
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Axial Lead Transient Voltage Suppressors
|
24
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26.7
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29.5
|
1
|
38.9
|
206
|
5
|
Uni
|
选型表 - 优恩半导体 立即选型
【元件】新品!优恩半导体推出面向USB3.1/HDMI2.1等高速数据接口EOS/ESD静电保护器件
在当今高度集成化、小型化和智能化的电子产品市场中,EOS/ESD静电放电防护已成为确保产品稳定性和可靠性的关键因素。随着USB 3.0/3.1、HDMI 2.0/2.1等高速数据接口的广泛应用,EOS/ESD现象对电子产品的威胁日益加剧。优恩半导体推出面向高速数据接口的EOS/ESD静电保护器件。
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整体外形尺寸小至0.6*0.3*0.3mm (DFN0603),工作电压范围覆盖2.5V~36V,电容值低至0.2pF,浪涌能力最高可达240安培,静电等级可达空气放电、接触放电±30KV。提供免费浪涌测试仪、静电测试仪测试。
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可贴PCB最大尺寸:L510*W460mm;板厚:0.5mm~3mm;01005微型元件到45mm元件;最大零件尺寸:150*150m;最小引脚零件间距0.3mm;最小BGA间距0.3mm。
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