JieJie Microelectronics Launched Its Car-grade SGT MOSFET Which VBR(DSS)_Min from 40V to 150V
After launching its industry-leading JSFET® 30 ~ 150V series SGT MOSFETs, JieJie Microelectronics focused on applications such as NEVs and smart grids and launched its car-grade SGT MOSFET devices, as end markets placed greater and greater emphasis on the reliability of power devices, especially because of China's 14th Five-year Plan and the global mandatory requirements for environmental protection and carbon emission reduction. Thirteen products were launched for the first time featuring excellent production capacity, endurance, and performance. The increase of minimum withstand voltage VBR(DSS)_Min from 40V to 150V makes the products suitable for line-fit and after-market onboard medium and low voltage applications: DC-DC synchronous rectification and power-on/off etc. in non-high-voltage subsystems of ADAS, infotainment, and inverter, as well as motor driven, relay, load switch, high-low beam drive and other features in body control modules (BCM).
These car-grade Power MOSFET Devices successively passed three cycles of AEC-Q101 reliability test verification@175℃. The IATF 16949-approved car-grade packaging line incorporating independent intellectual property rights works with PDFN5x6-8L and TO-263-3L packages with high thermal efficiency and low heterogeneous pin electrical characteristics (impedance, inductance, input capacitance), which endows these car-grade JSFET SGT MOSFETs with stable electrical properties and long-term reliability. The RDS(ON)_Typ and Qg_Typ of JMSL0402AGQ are as low as 1.6m and 46nC; the PDFN5x6-8L package used has 50% less area than a conventional DPAK (TO-252-3L) but provides the same heat dissipation effect; moreover, the long-term reliability of devices has been enhanced. Furthermore, this helps reduce the footprint of the ADAS (Adaptive Driving Assistance System) mainboard, making it easier to be embedded into NEVs like HEVs and EVs.
Fan Jun, Marketing Director of Power Discrete Devices at JieJie Microelectronics: "The thirteen car-grade power MOSFETs launched by JieJie Microelectronics are in strict conformity to the IATF 16949 quality management system and the AEC-Q101 reliability verification standard. In response to the harsh environment in which cars are used, the PDFN5x6-8L package is designed with low-stress pins of up to 0.275mm in length (on par with the best in Europe and the United States); defective solder joints can be accurately screened out by an automatic optical detector during PCB assembly (PCBA), thereby assuring the long-term operating stability of devices."
This series of thirteen car-grade power MOSFETs are in mass production.
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本文由Vicky转载自JieJie Microelectronics News,原文标题为:JieJie Microelectronics launched its car-grade JSFET SGT MOSFETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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捷捷微电MOS选型表
捷捷微电提供以下技术参数的MOS选型,VDS_Max:-100V~1000V,VGS(th)_Typ:-2V~3.5V等
产品型号
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品类
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Confi-guration
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VDS_Max(V)
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ID_Max(A)
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VGS(th)_Typ(V)
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RDS(ON)_Typ@VGS =10V(mΩ)
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RDS(ON)_Max@VGS=10V(mΩ)
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RDS(ON)_Typ@VGS=4.5V(mΩ)
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RDS(ON)_Max@VGS=4.5V(mΩ)
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VGS_Max(V)
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EAS_Max(mJ)
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Ciss_Typ(pF)
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Coss_Typ(pF)
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Crss_Typ(pF)
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Qg_Typ(nC)
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MPQ
|
MOQ
|
封装
|
JMSL040SAGQ
|
MOS
|
N
|
40V
|
387A
|
1.5V
|
0.58mΩ
|
0.75mΩ
|
0.8mΩ
|
0.99mΩ
|
±20V
|
506mJ
|
7654pF
|
3738pF
|
44pF
|
114nC
|
3000
|
30000
|
PDFN5x6-8L
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选型表 - 捷捷微电 立即选型
32款车规级SGT MOSFETs采用MSL1等级及低机械温度应力材料,广泛应用于汽车市场
捷捷微电为保证性能与高可靠性,推荐32款车规级SGT MOSFETs,-55~175°C温度可长期稳定工作,PDFN3x3/5x6-8L/-D及TO-252/263-3/7L的封装,采用MSL1等级及低机械温度应力材料,皆不含卤素,且符合RoHS要求。
JMSH0606PG 60V,114A,4.5mΩN沟道功率SGT MOSFET
描述- 本资料详细介绍了JMSH0606PG型号的60V、114A、4.5mΩ N-channel Power SGT MOSFET的特性、参数、应用领域等。该产品具有优异的RDS(ON)和低栅极电荷,适用于负载开关、PWM应用和电源管理等领域。
型号- JMSH0606PG,JMSH0606PG-13
【产品】捷捷微电推出车规级JSFET® SGT MOSFET,适合车载前装及后装等各类中低压应用
捷捷微电推出的车规级JSFET® SGT MOSFET,最大电流100A,适合车载前装及后装等各类中低压应用,这批车规级功率MOSFET器件,先后通过了三个批次 AEC-Q101 @ 175℃ 的可靠性测试验证。
JMSL04055UQ 40V,62A,5.1mΩN沟道功率SGT MOSFET
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型号- JMSL04055UQ-13,JMSL04055UQ
JMSL0402TG 40V,163A,2.9mΩN沟道功率SGT MOSFET
描述- 该资料详细介绍了JMSL0402TG型号的40V, 163A, 2.9mΩ N-channel Power SGT MOSFET的特性、参数和应用领域。资料涵盖了产品的电气特性、热特性、开关特性、典型性能曲线以及封装机械数据。
型号- JMSL0402TG,JMSL0402TG-13
JMSH0406PGQ 40V,106A,4.1mΩN沟道功率SGT MOSFET
描述- 该资料详细介绍了JMSH0406PGQ型号的40V、106A、4.1mΩ N-channel Power SGT MOSFET的特性、参数和应用领域。资料涵盖了产品的电气特性、热特性、开关特性、典型性能曲线、封装尺寸等详细信息。
型号- JMSH0406PGQ-13,JMSH0406PGQ
JMSH0401PTSQ 40V,381A,0.9mΩN沟道功率SGT MOSFET
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型号- JMSH0401PTSQ,JMSH0401PTSQ-13
JMSH1509PG 150V,88A,9.1mΩN沟道功率SGT MOSFET
描述- 本资料介绍了JMSH1509PG型号的150V、88A、9.1mΩ N-channel Power SGT MOSFET。该产品具有优异的RDS(ON)和低栅极电荷,适用于负载开关、PWM应用和电源管理等领域。
型号- JMSH1509PG-13,JMSH1509PG
32 Auto-grade 40~150V SGT MOSFET from JieJie MicroelectronicsIncreasingly Found Homes in Automobiles
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JMSH040SPGQ 40V,342A,0.7mΩN沟道功率SGT MOSFET
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JMSH1504NC 150V,200A,3.9mΩN沟道功率SGT MOSFET
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型号- JMSH1504NC
JMSL060SPGQ 60V,283A,1.4mΩN沟道功率SGT MOSFET
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型号- JMSL060SPGQ-13,JMSL060SPGQ
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