JieJie Microelectronics Launched Its Car-grade SGT MOSFET Which VBR(DSS)_Min from 40V to 150V
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After launching its industry-leading JSFET® 30 ~ 150V series SGT MOSFETs, JieJie Microelectronics focused on applications such as NEVs and smart grids and launched its car-grade SGT MOSFET devices, as end markets placed greater and greater emphasis on the reliability of power devices, especially because of China's 14th Five-year Plan and the global mandatory requirements for environmental protection and carbon emission reduction. Thirteen products were launched for the first time featuring excellent production capacity, endurance, and performance. The increase of minimum withstand voltage VBR(DSS)_Min from 40V to 150V makes the products suitable for line-fit and after-market onboard medium and low voltage applications: DC-DC synchronous rectification and power-on/off etc. in non-high-voltage subsystems of ADAS, infotainment, and inverter, as well as motor driven, relay, load switch, high-low beam drive and other features in body control modules (BCM).
These car-grade Power MOSFET Devices successively passed three cycles of AEC-Q101 reliability test verification@175℃. The IATF 16949-approved car-grade packaging line incorporating independent intellectual property rights works with PDFN5x6-8L and TO-263-3L packages with high thermal efficiency and low heterogeneous pin electrical characteristics (impedance, inductance, input capacitance), which endows these car-grade JSFET SGT MOSFETs with stable electrical properties and long-term reliability. The RDS(ON)_Typ and Qg_Typ of JMSL0402AGQ are as low as 1.6m and 46nC; the PDFN5x6-8L package used has 50% less area than a conventional DPAK (TO-252-3L) but provides the same heat dissipation effect; moreover, the long-term reliability of devices has been enhanced. Furthermore, this helps reduce the footprint of the ADAS (Adaptive Driving Assistance System) mainboard, making it easier to be embedded into NEVs like HEVs and EVs.
Fan Jun, Marketing Director of Power Discrete Devices at JieJie Microelectronics: "The thirteen car-grade power MOSFETs launched by JieJie Microelectronics are in strict conformity to the IATF 16949 quality management system and the AEC-Q101 reliability verification standard. In response to the harsh environment in which cars are used, the PDFN5x6-8L package is designed with low-stress pins of up to 0.275mm in length (on par with the best in Europe and the United States); defective solder joints can be accurately screened out by an automatic optical detector during PCB assembly (PCBA), thereby assuring the long-term operating stability of devices."
This series of thirteen car-grade power MOSFETs are in mass production.
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本文由Vicky转载自JieJie Microelectronics News,原文标题为:JieJie Microelectronics launched its car-grade JSFET SGT MOSFETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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JieJie Microelectronics launched N-channel JSFET® series of JMSH1001ATL (VDS_Max=100V) and JMSH1504ATL (VDS_Max=150V) incorporating independent intellectual property rights; both are designed with advanced PowerJE® 10x12 package.
捷捷微电MOS选型表
捷捷微电提供以下技术参数的MOS选型,VDS_Max:-100V~1000V,VGS(th)_Typ:-2V~3.5V等
产品型号
|
品类
|
Confi-guration
|
VDS_Max(V)
|
ID_Max(A)
|
VGS(th)_Typ(V)
|
RDS(ON)_Typ@VGS =10V(mΩ)
|
RDS(ON)_Max@VGS=10V(mΩ)
|
RDS(ON)_Typ@VGS=4.5V(mΩ)
|
RDS(ON)_Max@VGS=4.5V(mΩ)
|
VGS_Max(V)
|
EAS_Max(mJ)
|
Ciss_Typ(pF)
|
Coss_Typ(pF)
|
Crss_Typ(pF)
|
Qg_Typ(nC)
|
MPQ
|
MOQ
|
封装
|
JMSL040SAGQ
|
MOS
|
N
|
40V
|
387A
|
1.5V
|
0.58mΩ
|
0.75mΩ
|
0.8mΩ
|
0.99mΩ
|
±20V
|
506mJ
|
7654pF
|
3738pF
|
44pF
|
114nC
|
3000
|
30000
|
PDFN5x6-8L
|
选型表 - 捷捷微电 立即选型
32 Auto-grade 40~150V SGT MOSFET from JieJie MicroelectronicsIncreasingly Found Homes in Automobiles
These 40 ~ 150V SGT MOSFETs are well suited for applications inside automobiles. Their long-term reliability was tested per AEC-Q101 quality standards. JMSL0406AGQ and its dual-die variant JMSL0406AGDQ are popular in the body control modules (BCM) for use cases like low-power DC motor driving.
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JMSL04060GDQ 40V,95A,6.4mΩN沟道功率SGT MOSFET
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