【产品】±15V或±12V供电的抗辐射CMOS双路SPDT模拟开关
RENESAS(瑞萨)电子作为全球专业的半导体制造商,具有强大的研发实力、设计开发平台以及多种制造技术,由该公司的子公司intersil推出的抗辐射CMOS双路SPDT模拟开关——HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH,是采用Intersil的介电隔离辐射加固硅栅(RSG)工艺制造的单片器件,可以确保闭锁自由运行。其元件示意图如图1所示。
图1 HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH元件示意图
HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH模拟开关最大导通电阻为70Ω,最大待机电源电流+150μA,最低待机电源电流-100μA,抗辐射总剂量高达3x105rad(Si),HS-303ARH和HS-303AEH使用±15V电源供电,HS-303BRH和HS-303BEH使用±12V电源供电。在整个工作电压以及工作电流范围内,以及暴露于辐射环境下时,这些模拟开关的导通电阻都能保持合理恒定。其内部功能逻辑如图2所示。
图2 HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH内部功能逻辑图
HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH模拟开关提供低电阻开关性能,使得模拟电压升至电源轨,通过5V数字输入控制形成先开后合式切换。其封装形式包括14 LD SBDIP、14 LD Flatpack以及裸片形式等3种,引脚与HS-303RH兼容,如图3所示为其引脚配置图。工作温度范围为-55℃~+125℃,有良好的环境适应性。
图3 HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH引脚配置图
HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH的主要特性:
•QML符合MIL-PRF-38535标准
•辐射耐受性
-总剂量:3x105rad(Si)
-SEE(Single Event Effect,单事件效应):60°入射角,线性能量传递LET=60MeV-mg/cm2,电荷转移到断开开关的输出<150pC
•无闭锁,介电隔离器件岛
•引脚和功能与Intersil HS-303RH和HI-303系列模拟开关兼容
•模拟信号范围与供电电源电压范围相同
•低漏电流:100nA(最大值,后置)
•低rON:70Ω(最大值,后置)
•最大待机电源电流+150μA
•最低待机电源电流-100μA
HS-303ARH、HS-303AEH、HS-303BRH、HS-303BEH的应用领域:
•手持设备
•便携式设备
•通信系统
技术顾问:馨芯
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人到中年 Lv7. 资深专家 2018-08-23不错
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希望的风 Lv8. 研究员 2018-08-18很不错
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冷锋 Lv7. 资深专家 2018-08-11不错
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