UMS‘s New Powerful GaN X-band HPA Which Exhibits 17W Output Power with A High PAE of 50%

时间： 2021-12-18 来源：UMS

技术问答

UMS's CHA8312-99F is a new powerful GaN X-band HPA which exhibits 17W output power with a high PAE of 50%.

This 8-12GHz High Power Amplifier features also an excellent linear gain of 26dB.

CHA8312-99F Linear Gain versus Frequency

One other asset of this circuit is that it is an excellent solution for numerous applications such as defence, radar, test equipment and communication.

It is designed on a 0.15µm GaN HEMT proprietary technology.

Main characteristics:

· Frequency range: 8-12GHz

· PAE: >50%@23dBm Input Power

· Linear Gain: 26dB

· Pout: 42.5dBm@23dBm Input Power

· Return losses: Input RL >17dB
· Output RL >11dB

· DC bias: 20V@320mA

· Chip size: 3.99mmx3.12mmx0.07mm

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