Making a Fast, Efficient, Small 350V Half Bridge Module with EPC‘s eGaN FETs
The basic building block used in many power systems is the half bridge which consists of two power FETs in series and their respective gate drivers. While discrete FETs and gate drivers can be used to make this function on a board, often it is advantageous to use a half-bridge module. There are many benefits of using a half-bridge module including the use of a single pre-qualified part, shorter lead times, and higher performance. Sensitron has been a supplier of power modules for over fifty years, and their latest product is even more attractive due to the use of EPC's eGaN FETs. Sensitron collaborated with Efficient Power Corporation to use the recently released EPC2050 GaN FET to develop a 350V half bridge module. Designed for commercial, industrial, and aerospace applications, the SPG025N035P1B half bridge intelligent power module is rated at 20A and can be used to control over 5kW. Shown in Figure 1 is the significant package size reduction which was achieved by upgrading from Si and SiC to GaN:
Figure 1: Size reduction achieved by upgrading designs from silicon to silicon carbide (SiC) to gallium nitride (GaN).
There are many advantages of using GaN FETs for the 350V half-bridge module. These include:
• Speed – rated 500kHz, which is excellent for a 350V module
• Efficiency – low switching losses
• Thermals – isolated top side cooling, for best system thermal design
• Size – a clear size reduction from previous modules, 1.1" x 0.7" x 0.17"
• Reliability – Sensitron's and eGaN's proven field reliability
To achieve the small size, the very small size of the EPC2050 GaN FET (1.95 x 1.95mm) was key.
Chip-scale packaged EPC2050 eGaN FET
Sensitron 350V, 20A Module
Collaboration between Sensitron and EPC on the development of the module began before the EPC2050 350V eGaN FET was in production. Sensitron did multiple iterations, improving the module as the 350V GaN FET completed qualification. During the final development phase, EPC changed the dimensions of the eGaN FET to a thinner package which created internal changes to the module housing. With this adjustment, the already excellent junction-to-case thermal conduction was further improved. The SPG025N035P1B half bridge intelligent power module includes a bootstrapped floating gate drive for the high side FET. The integrated gate drive optimizes high-frequency switching performance while eliminating voltage sensitivity concerns.
Summary
Sensitron was able to reduce the size of their product by 60% while also improving the module's already excellent junction-to-case thermal conduction by replacing traditional silicon FETs with EPC's 350V, EPC2050 GaN FET. Optimal thermal performance is achieved through Sensitron's proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14"). Additional package ratings are also in development, including a 200V, 20A half bridge with an integrated gate drive. This module is the result of cooperative development between Sensitron and EPC.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由董慧转载自EPC,原文标题为:Making a Fast, Efficient, Small 350 V Half Bridge Module with eGaN FETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
EPC GaN FET助力DC/DC转换器实现功率密度和效率基准
EPC GaN FET与Analog Devices驱动器和控制器相结合,为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。
应用方案 发布时间 : 2024-02-29
BRC Solar Selects EPC 100V eGaN FETs for Next Generation Solar Optimizer
Designing EPC‘s EPC2218 100V FETs into BRC Solar GmbH‘s next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact.
应用方案 发布时间 : 2022-08-26
【应用】eGaN FET EPC2051助力激光雷达发射端高功率纳秒级别脉冲设计
在激光雷达的发射链路中,为实现雷达高分辨率的设计,需产生高功率、纳秒级别的激光脉冲。要达到这样的设计要求,普通MOS不能满足要求,需要采用GaN 搭配高功率Laser器件进行实现。EPC2051是EPC公司生产的氮化镓场效应晶体管(eGaN FET),已经成功的应用在激光雷达上。
应用方案 发布时间 : 2020-04-29
EPC(宜普)eGaN® 氮化镓晶体管(GaN FET)和集成电路及开发板/演示板/评估套件选型指南
目录- eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
型号- EPC2212,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2016C,EPC2050,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC9087,EPC90154,EPC2069,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC9018,EPC2065,EPC90151,EPC90152,EPC21702,EPC2100,EPC2067,EPC2221,EPC21701,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC2039,EPC9507,EPC2030,EPC9067,EPC2032,EPC2031,EPC9068,EPC2152,EPC2033,EPC9063,EPC9186,EPC9066,EPC8010,EPC9180,EPC2204A,EPC9181,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2202,EPC2204,EPC2015C,EPC2207,EPC2206,EPC2040,EPC2045,EPC2044,EPC9194,EPC2012C,EPC2019,EPC9049,EPC9203,EPC9204,EPC9205,EPC2252,EPC9166,EPC9167,EPC9047,EPC9201,EPC9041,EPC9162,EPC9163,EPC9165,EPC7020,EPC9160,EPC9040,EPC2024,EPC8009,EPC2302,EPC2001C,EPC2029,EPC2304,EPC2306,EPC2305,EPC8002,EPC2021,EPC9177,EPC2020,EPC9057,EPC9167HC,EPC2023,EPC9179,EPC9058,EPC8004,EPC2022,EPC9059,EPC9173,EPC9174,EPC9055,EPC9176,EPC9170,EPC9050,EPC9171,EPC9172,EPC2010C,EPC2034C,EPC7007,EPC7002,EPC9148,EPC2071,EPC7001,EPC23101,EPC23102,EPC23103,EPC9144,EPC90140,EPC23104,EPC2111,EPC7004,EPC2110,EPC7003,EPC90133,EPC90132,EPC9022,EPC9143,EPC90137,EPC90138,EPC90135,EPC90139,EPC7019,EPC7018,EPC9038,EPC9159,EPC9039,EPC2007C,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC2088,EPC7014,EPC21601,EPC9158,EPC90122,EPC9151,EPC9031,EPC90123,EPC90120,EPC9153,EPC9033,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
【元件】EPC推出首款具有最低1mΩ导通电阻的GaN FET EPC2361,采用紧凑型QFN封装(3mmx5mm)
EPC推出采用紧凑型QFN封装(3mmx5mm)的100V、1mOhm GaN FET(EPC2361),助力DC/DC转换、快充、电机驱动和太阳能MPPT等应用实现更高的功率密度。
产品 发布时间 : 2024-02-29
EPC将在PCIM Asia 2024展示先进的氮化镓电源解决方案
作为全球增强型氮化镓 (GaN) FET 和 IC 的领导者,EPC 很高兴宣布将参加 PCIM Asia 2024。该活动将于 8 月 28 日至 30 日在中国深圳举行。EPC 的 GaN 专家将在 PCIM Asia 期间展示最新一代的 GaN FET 和 IC,涵盖包括 AI 服务器、机器人等在内的各种实际应用,探索业内最全面的 GaN 电力转换解决方案组合。
厂牌及品类 发布时间 : 2024-08-26
【IC】EPC提供100V GaN FET助力实现更小的电机驱动器,用于电动自行车、机器人和无人机
EPC推出三相BLDC电机驱动逆变器参考设计EPC9194,工作输入电源电压范围为14V~60V,可提供高达60Apk的输出电流。此电压范围和功率使该解决方案非常适合用于各种三相BLDC电机驱动器,包括电动自行车、电动滑板车、无人机、机器人和直流伺服电机。
产品 发布时间 : 2023-11-07
How to Design a 12V-to-60V Boost Converter with Low Temperature Rise Using eGaN FETs
This Talk EPC will examine the design of a 12V to 60V, 50W DC/DC power module with low temperature rise using eGaN FETs in the simple and low-cost synchronous boost topology.
设计经验 发布时间 : 2021-11-01
【经验】GaN FET在激光雷达驱动器中的参数设计指导
本文中给出的激光雷达驱动器采用EPC公司的开发板EPC9126进行设计。EPC9126/EPC9126HC采用最优的PCB layout,EPC9126采用GaN FET—EPC2016C,在极短的4ns脉冲宽度,给三接面激光产生35A脉冲。EPC9126HC为大电流演示系统,在 8ns脉冲宽度可产生65A脉冲。文中给出了具体设计的参数指导。
设计经验 发布时间 : 2020-06-13
EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings
EPC advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054. These new generation eGaN® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight. With the clear superiority of these new eGaN FETs, power system designers can take advantage of devices that are higher performing, smaller, more thermally efficient, and at a comparable cost.
厂牌及品类 发布时间 : 2021-07-23
EPC GaN FET EPC9192让您实现高性能D类音频放大器,每声道输出功率达700W
EPC宣布推出EPC9192参考设计,可实现优越、紧凑型和高效的D类音频放大器,于接地参考、分离式双电源单端 (SE)设计中发挥200 V eGaN FET器件(EPC2307)的优势,在4Ω负载时,每声道输出功率达700W。
产品 发布时间 : 2024-04-12
【元件】使用EPC新款50V GaN FET设计更高功率密度的USB-C PD应用,尺寸仅为1.8 mm²
EPC推出了50V、8.5mOhm的EPC2057 GaN FET,尺寸仅为1.5mm x 1.2mm,为USB-C PD应用提供了更高的功率密度。加利福尼亚州埃尔塞贡多—2024年6月—EPC是增强型氮化镓(GaN) 功率FET和IC的全球领导者,推出了50V、8.5mΩ的EPC2057。该GaN FET专为满足高功率USB-C设备的不断发展需求而设计,包括消费电子、车载充电和电动出行设备。
产品 发布时间 : 2024-06-26
电子商城
现货市场
服务
满足150W内适配器、PD快充、氮化镓快充等主流产品测试需要;并可查看被测开关电源支持协议,诱导多种充电协议输出,结合电子负载和示波器进行高精度测试。测试浪涌电流最大40A。支持到场/视频直播测试,资深专家全程指导。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论