【产品】性能接近GaN FET的650V SiC MOSFET Falcon系列,调节外部栅极电阻可完全控制dV/dt
即思创意(Fastsic)增强型SiC MOSFET提供的Qoss几乎是性能优异的硅超结MOSFET的1/10,接近GaN FET。导通电阻 @ 100℃时仅比导通电阻 @ 25℃高10%,使其在导通电阻@ 100℃时的 Qoss品质因数(FOM)比GaN更好。
SiC MOSFET的驱动方式与硅功率MOSFET相似,并且可以通过调节外部栅极电阻(Rg,ext)比较简单地完全控制dV/dt。尽管芯片尺寸小得多,但却具备更高的雪崩能量(EAS)密度(接近20J / cm2)使得EAS额定值与先进的硅超结MOSFET相当。
图1
优势与特性
100%雪崩测试
短路鲁棒性
Voss@25c=650V
DPAK@MSL Level-1
电压驱动 (VGs-10-18V)
低限阀泄露 (lg<1nA)
低EMI
应用
工业&消费
图2
图3
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系列,NSI6602B-Q1SPNR,NSI6601WC-DSWVR,NSI6651ASC-Q1SWR,NSC6272,NSI8263CX-DSWR,NSD8310-Q1HTSXR,NSC6273,NSREF31XX,NSI6622ND-DSWR,NSI6622NC-DSPNR,NSI1042C-DSWVR,NSI6602NB-DLAR,NSI6602NB-DSPNR,NSA5312,NSI6622VC-Q1SWKR,NSPGL1,NSI6602A-Q1SWR,NSI6622NC-Q1SPOR,NSI6642C-DLAMR,NSI6601MC-DSWVR,NSD56008-Q1,NSI8220WX,NSI8266WX,NSD5604NE,NSI6622VA-Q1SPNR,NSI6602VB-DSWKR,NCA1042BN-Q1SPR,NCA1057-Q1SPR,NCA1043B-Q1,NCA9511,NSI6602A-DSWR,NSC6280,NSI6602NA-Q1SWKR,NSI6602NC-DSWR,NSI6801TC-DDBR,NSI8242SX,NSI68515AC-DSWR,NST112,NSI6602B-DSWKR,NSI6602VD-DLAMR,NSI8220CX-DSWVR,NSI6622NB-DSWR,NST235,NST117,NSI6602VC-DSWKR,NSI6602VC-Q1SWKR,NSI6602MB-DSWDR,NST118,NSD16242-Q1SPR,NCA3085,NSI1050C-SWR,NCA1044-Q1SPR,NSI6651,NSI6601MB-DSWVR,NSI6642B-DLAMR,NSI6602C-DSWKR,NSI8240NX,NCA1057N-Q1DNR,NSP163X,NSI6602NC-DSPNR,NCA1042BN-Q1,NSI8221WX,NSI66X2,NSI6631ASC-Q1SWR,NSP163X 系列,NSI1050C,NSI6602MNC-DSWTR,NCA1042B-Q1DNR,NSI6642,NSI6601C-DSWVR,NIRS2X,NSI8266SX,NSI6602NB-Q1SPOR,NSI6602NC-Q1SPOR,NSG65N15K,NSI6622ND-DLAMR,NSD12409-Q1SPR,NCA1042CN-DSPR,NSI6602VA-DSWKR,NSI6642D-DLAMR,NCA1051N,NSI6642A-DSWKR,NIRS20N1-DSPR,NIRS21N1-DSPR,NSI6622NA-DLAR,NSC2860X-DQNR,NSI1042-DSWVR,NCA1042C-Q1SPR,NSI6602C-DSWR,NCA1057-Q1DNR,NSI8221CX-DSPR,NPD010N120A-DTOGT,NSI6602VB-Q1SWR,NSI8210CX-DSPR,NSI8241NX,NSI6602NC-Q1SPNR,NCA1042BN-Q1DNR,NST461,NSD2621X,NCA1042A-Q1,NSI8222WX,NST103,NSI1303D0X,NSI1303E2X,NSI6622A-Q1SWKR,NSI6602VC-DLAR,NSD16242-DSPR,NCA9555,NSI1052,NSC6360,NSC6362,NSI6622NB-DLAMR,NSI6651ALC-DSWR,NSC6364,NCA1042B,NSI6602NA-DSPNR,NSI6622A-DLAR,NSI6622C-Q1SPNR,NCA1042C,NSI8220CX-DSWR,NSI6622C-DSPNR,NSA3166,NCA1042A-Q1SPR,NSIP8941W0-DSWR,NSI6642B-DLAR,NCA1042B-Q1,NSPGD1M,NSE4254 系列,NSD1624-DSPR,NSI6602VA-Q1SWR,NSD1026V-Q1HMSR,NSI8242CX-DSWR,NSI6602MNC-Q1SWTR,NST20,NIRS31,NSREF30XX,NCA9545,NSI6622NA-DLAMR,NSI1042,NSI6611,NCA9546,NSI6622B-DSPNR,NCA9306,NCA9548,NSD12416-Q1SPR,NSI6602MC-Q1SWTR,NSI8242NX,NSD8381-Q1QAIR,NSD8308-Q1HTSXR,NCA9617A,NST1001HA,NSI6602VA-DSWR,NSI1303D2X,NSI6601B-DSWVR,NSD7310-DHSPR,NSI6601,NSD731X-Q1,NCA1057N-Q1SPR,NSR7808GXX,NSD7312-Q1HSPR,NSI6602VB-DLAMR,NSI6602MNF-DSWTR,NSD1026V-DHMSR,NSA3300,NSI6602C-Q1SWKR,NSC2860X,NSI6622NB-Q1SPNR,NCA1051N-DSPR,NSI6611ASC-DSWR,NSI22C11,NSI8230CX-DSWR,NSI6801B-DSPR,NSI6622A-DSPNR,NSD5604NE-DHTSTR,NSI6601MB-Q1SWVR,NST86,NCA1042B/ A-Q1,NIRS31-DSSR,NSI6642C-DSWKR,NSE4250 系列,NSA2200,NSI8262WX,NSI6602NB-DLAMR,NSE11409,NSI8260SX,NSPGD1,NCA1042B-Q1SPR,NSI6602VD-Q1SPNR,NSI6622NC-DLAMR,NSD8306,NSD3608-Q1,NSD731X,NSD8308,NIRSP31V,NSI6602VB-DLAR,NSD73
瞻芯电子SiC MOSFET选型表
瞻芯电子提供以下参数选型:汽车级&工业级,VDS(V):650V~1700V,RDS(ON) :15mΩ~10000mΩ。
产品型号
|
品类
|
Qualification
|
VDS(V)
|
RDS(ON) (mΩ)
|
ID(TC=25°C)(A)
|
VTH( TJ =25°C)(V)
|
VTH( TJ =175°C)(V)
|
Qg(nC)
|
Operating Junction Temperature(°C)
|
Package
|
IV2Q06025T4Z
|
SiC MOSFET
|
汽车级
|
650V
|
25mΩ
|
99A
|
2.8V
|
2.0V
|
125.0nC
|
-55°C to 175°C
|
TO247-4
|
选型表 - 瞻芯电子 立即选型
1700V SiC MOSFET在大功率能源及工业领域的应用
1700V SiC MOSFET的低开关损耗可提高开关频率,且每个单元的总体尺寸大幅减小。同时,1700V的高阻断电压还可减少达到相同直流电压所需的单元数。在以上种种简化和优化后,终端应用的系统可靠性大大提升,而更少的有源开关和栅极驱动器也降低了整体成本。SMC桑德斯微电子根据客户的需求设计和生产半导体及相关产品。
应用方案 发布时间 : 2024-06-18
罗姆即将亮相2024慕尼黑电子展,并展示其在“电动交通”、“汽车”和“工业”主题下的最新解决方案
罗姆即将亮相2024慕尼黑电子展,展示其先进的功率和模拟技术,旨在提高汽车和工业应用中的功率密度、效率和可靠性。这些先进技术对于满足现代电子系统日益增长的需求至关重要,特别是在可持续性和创新的背景下。
原厂动态 发布时间 : 2024-11-06
即思创意(fastSiC)碳化硅MOSFET和肖特基二极管选型指南
目录- SiC Schottky Diode&SiC MOSFET
型号- FL12190A,FF06100G,FC06008D,FF06100F,FC06006A,FC06008C,FC06008B,FF06100D,FC06008A,FF06320B,FF06320A,FF06030Q,FF17900E,FH06010C,FH06020E-3,FL06320B,FH06020E-2,FL06320A,FC06006D,FC06016C,FC06006C,FF17900Q,FC06010C,FH06004C,FH06006C,FC06002X,FL06150A,FL06320G,FF061K4A,FF12040Q
【IC】Littelfuse用于SiC MOSFET和高功率IGBT的创新低侧栅极驱动器IX4352NE
Littelfuse宣布推出IX4352NE低侧SiC MOSFET和IGBT栅极驱动器。这款创新的驱动器专门设计用于驱动工业应用中的碳化硅(SiC)MOSFET和高功率绝缘栅双极晶体管(IGBT)。IX4352NE通过一种新型9A拉/灌电流驱动器扩展了我们广泛的低侧栅极驱动器系列,简化了SiC MOSFET所需的栅极驱动电路。
产品 发布时间 : 2024-05-25
Application Brochure for INDUSTRIAL
型号- BD52W04G-C,SH8KXX SERIES,BD900N1W,QH8KXX SERIES,BM2SCQ123T-LBZ,R6007RND3,BD900N1G-C,BD2311NVX-C,RBR2VWM60A,BD9XXN1 SERIES,BD933N1,RFS SERIES,RBR1VWM40A,BM2SC12XFP2-LBZ,CSL1901,BP3622,BD14210G-LA,BP3621,SCT4013DW7,BM2P06XMF-LBZ,R6035VNX3,RB068VWM150,R60XXRNX SERIES,CSL1901DW,BD950N1WG-C,BM2P060LF-Z,BM2LE160FJ-C,BV1LE080EFJ-C,BM2SC123FP2-LBZ,SH8MC5,SCT4018KW7,RB168VWM-40,RFL SERIES,SCT4018KE,BD52W03G-C,SCT4026DE,BM2SCQ121T-LBZ,LTR10 SERIES,RB168VWM-60,BD48W00G-C,RBR1VWM30A,SH8MB5,SCT4018KR,SCT4026DR,R6035VNX,BM2P061MF-Z,BM6437X,CSL1901UW,BM64378S-VA,BD900N1EFJ-C,D950N1EFJ-C,SCT4013DE,BM2P063MF-Z,R6024VNX3,SCT4013DR,BD7XXL05G-C,R60XXVNX SERIES,BD950N1,RB068VWM100,RFL,SH8KXX,CSL1901VW,RFS,BD14215FVJ-LA,BM6437X SERIES,PSR,RB168VWM-30,SCT4036KW7,R6004RND3,BM2LE040FJ-C,RF05VAM2S,BD750L05G-C,BM2SC122FP2-LBZ,BD933N1G-C,BD900N1,BM2P061LF-Z,BD52W02G-C,BM64377S-VA,BD933N1EFJ-C,QH8MB5,REFLD002,R60XXRNX,RBLQ2VWM10,PSR500,SCT4026DW7,BV1LE040EFJ-C,RFS30TZ6S,BD900N1WG-C,CSL1901 SERIES,QH8MC5,CSL1901YW,BV1LEXXXEFJ-C,RFL60TZ6S,R6013VND3,PSR SERIES,R6009RND3,R6077VNZ,BM2SCQ122T-LBZ,RFL60TS6D,S WAVE B-01,PSR400,BD933N1WG-C,BD52W01G-C,RB068VWM-60,R WAVE B-01,REFPDT007-EVK-001B,REFPDT007-EVK-001A,REFPDT007-EVK-001C,RFS30TS6D,LTR10,BD950N1WEFJ-C,BM2SC124FP2-LBZ,QH8MX5 SERIES,QH8KB5,R6013VNX,QH8KB6,RBR2VWM30A,BM2LE250FJ-C,BD2311NVX-LB,RGWXX65C SERIES,RGW00TS65CHR,SH8MX5 SERIES,SCT4045DW7,BV1LE250EFJ-C,SCT4036KE,QH8MX5,SCT4045DE,R6024VNX,BM2SCQ124T-LBZ,R6055VNX,R6018VNX,R6055VNZ,SCT4045DR,RGW80TS65CHR,QH8KC6,CSL1901MW,QH8KC5,R60A4VNZ4,RB168VWM150,BD7XXL05G-C SERIES,BD52W06G-C,SCT4062KR,BD48HW0G-C,RBR2VWM40A,BD1421X-LA SERIES,BD9XXN1,R6077VNZ4,BM1390GLV-Z,RGWXX65C,RBR1VWM60A,REFLD002-1,QH8KXX,REFLD002-2,R6055VNX3,BD52W05G-C,BM2P06XMF-LBZ SERIES,SCT4036KR,RFL30TS6D,BD900N1WEFJ-C,BM2LEXXXFJ-C,RFS60TS6D,BD733L05G-C,BD933N1WEFJ-C,SCT4062KE,BM2SC12XFP2-LBZ SERIES,BM64374S-VA,GNE1040TB,BD950N1W,BD725L05G-C,BD933N1W,BD730L05G-C,BM2SC121FP2-LBZ,PSR350,SH8KC6,BM64375S-VA,SH8KC7,BM2LE080FJ-C,SH8MX5,SCT4062KW7,R60XXVNX,PSR100,BV1LEXXXEFJ-C SERIES,RB168VWM100,BD950N1G-C,RGW60TS65CHR,R6055VNZ4,BM2P060MF-Z,RLD90QZWJ,RFS60TZ6S,RLD90QZWD,RLD90QZWC,SH8KB7,RLD90QZWB,SH8KB6,RB068VWM-40,RLD90QZWA,RB068VWM-30,BV1LE160EFJ-C,RLD90QZW8,RFL30TZ6S,BM2LEXXXFJ-C SERIES,RLD90QZW5,BD1421X-LA,PSR330,RLD90QZW3
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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