DDR5 vs DDR4: Is DDR5 finally necessary?

时间： 2023-09-23 来源：ATP Blogs

技术问答

选型帮助

研发客服

商务客服

Double Data Rate 5 (DDR5), the next-generation random-access memory (RAM) specification, is poised to exceed DDR4 in every way.

DDR5 promises faster performance, higher memory bandwidth, higher densities, and a new power management structure that delivers better power efficiency. All of these advantages, and more, are expected to meet the ever-growing memory needs of present and future applications.

Both DDR4 and DDR5 dual-inline memory modules (DIMMs) have 288 pins, but with DDR5’s higher bandwidth, this means it can transmit data faster. While the pin count is the same, DDR5 DIMMs will not fit in DDR4 sockets as the alignment key is located differently and the pinouts have been changed to accommodate the new features.

DDR5 vs. DDR4 Alignment Keys

DDR5 Advantages Over DDR4

DDR5 vs. DDR4 Quick Comparison

Memory Bandwidth.

This refers to the theoretical maximum amount of data that can be transmitted (read/written) within a given time. Memory bandwidth is expressed in gigabits per second (Gbps). DDR5 memory bandwidth is initially at 4.8 Gbps per pin, compared with DDR4’s 3.2 Gbps. Future versions are expected to double DDR4’s, going up to a maximum of 6.4 Gbps.

Frequency / Transfer Rate.

Memory frequency refers to the number of commands or transfer operations that the memory module can handle per second. It is typically expressed in megahertz (MHz), but some manufacturers use express this in mega transfers per second (MT/s). The number follows the DDR version, so a DDR5-4800 DIMM, for example, has a frequency of 4800 MHz (or 4800 MT/s).

DDR4 frequency ranges from 1866 to 3200 MHz, while DDR5 ranges from 4800 to 6400 MHz initially, but may go as high as 8400 MHz.

Memory Density.

DDR4 maximum density is 16 Gb per die, so with 16 dies, this translates to 256 Gbit or a total of 32 GB. DDR5, in comparison, has 64 Gb per die, translating to 1024 Gbit or a total of 128 GB – this is 4X that of DDR4, enabling higher-capacity DIMMS!

Burst Length

This is the amount of data, which is input/output based on a single read/write command in DRAM. DDR5 doubles DDR4 burst length from 8 to 16, thus increasing the read/write efficiency.

Power Management and Consumption

The first power management IC (PMIC) on DIMM is introduced in DDR5. PMIC performs local voltage regulation on the module. Historically, voltage regulation has been done on the motherboard. PMIC on the module allows additional features such as threshold protection, error injection capabilities, programmable power-on sequence, and power management features (Source: Micron). DDR5's lower voltage of 1.1V compared with DDR4's 1.2V further reduces power consumption.

Summary: Important Spec Enhancements

The following table summarizes important enhancements of DDR5 from DDR4.

* VDD: Stands for Voltage Drain, which is the drain power voltage. * PMIC: Power Management Integrated Circuit

ATP Market Outlook

While many module houses started sampling 1st Gen. DDR5 to customers in 2021,the price gap at the functional level to justify the adoption for DDR5 over DDR4 is too wide to consider in ATP’s view.

The following table shows that in the early stage, the price gap between DDR4 and DDR5 is over 50%. The transition may be slower than expected, but adoption is gaining traction. DDR5 is expected to become the dominant memory in the coming years as demand for faster memory with greater capacity and consuming less power is expected to expand and will not slow down anytime soon.

ATP is expecting significant market growth when processors and platforms supporting DDR5 become prevalent. With the release of Intel’s 12th generation Core hybrid processors supporting both DDR4 and DDR5, adoption is expected to increase steadily, even though motherboards will support only one or the other.

DDR4 vs. DDR5 Price Gap Comparison

Insider Tips on Time-to-Market for DDR5

Price is key. Future die shrink and optimizer will lead to a better commercial situation for DDR5 adoption.
ATP is projecting that the DDR5 ecosystem will start building up within the first half of 2022 and new products will roll out.
While first usage will be in consumer applications, contract manufacturers (CMs) and electronic manufacturing services (EMS) will soon develop relevant platforms initially for approved vendors list (AVL).
By 2023, better adoption is expected, and speed will upgrade to 5600 MT/s. More new product introductions will focus on DDR5 and the price gap with DDR4 narrows down to 15-20%.
Finally, 2024 will be sweet spot for DDR5 products.The following table provides a summary of the DDR5 time frame.

DDR5 Time Frame

ATP Electronics is committed to meeting the most rigid memory requirements of varied industries. The next-generation DDR5 memory modules are expected to deliver performance and reliability improvements over the previous generation, especially for critical computing applications.

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由涂抹转载自ATP Blogs，原文标题为:Is DDR5 finally necessary?，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

【技术】解析DDR4与DDR3模块的差异和优势

ATP ELECTRONICS第四代双倍数据速率（DDR4）是一种内存标准，旨在更好，更快，更可靠地替代DDR3。本文介绍DDR4与DDR3模块相比的差异和优势。

技术探讨发布时间 : 2023-01-01

The Important Role of DRAM in the Internet of Things

DRAM as a Key Component in Data Processing. ATP DRAM products are capable of meeting the escalating memory requirements of the IoT/IIoT age. Designed, tested, validated and built to exacting industry standards, these modules are built to perform dependably for a long time, delivering trustworthy performance that translates to high return on investment and low total cost of ownership.

技术探讨发布时间 : 2023-09-05

The Advantages of High-Density VLP RDIMMs for Edge/5G/IIoT Applications

DDR4 remains the essential memory standard even in the face of emerging advances in edge, 5G, and IIoT technologies. ATP continues to improve upon its DDR4 offerings with its new higher-density VLP RDIMMs. Data generation and processing will remain unabated in the coming years, and the new 64 GB VLP RDIMMs are poised to tackle the faster, more intelligent, memory-intensive future.

技术探讨发布时间 : 2023-11-01

【选型】DDR4与DDR3模块相比的差异和优势

ATP ELECTRONICS第四代双倍数据速率（DDR4）是一种内存标准，旨在更好，更快，更可靠地替代DDR3。DDR4具有288个引脚，而DDR3具有240个引脚。DDR4 SO-DIMM具有260个引脚，而不是DDR3中的204个引脚。本文还介绍了其他DDR4与上一代模块相比的差异和优势。

器件选型发布时间 : 2019-12-10

ATP Electronics（华腾国际）是高性能，高质量和耐用NAND闪存和DRAM存储器模块的领先解决方案提供商。25年来，一直在通过高性能和高耐用性的NAND闪存产品和DRAM内存模块来改变工业和企业计算领域。拥有先进的系统级包装（SiP）以及独特的PowerProtector、安全擦除等技术。

工业SD卡工业microSD卡 SD卡 microSD卡工业闪存卡工业CFast卡 M.2 固态模块 M.2 串行 ATA (SATA) 固态模块 2.5"SSD SSD mSATA SSD ATP eUSB模块工业级U盘 eMMC嵌入式存储器 DRAM模块

授权代理商 - 世强控股有限公司线上商城技术资料

展开

DRAM-less Value Line SSDs Available in I-Temp/C-Temp Operable Models

型号- A600VC SERIES,N600VI,A600VI,A600VI SERIES,A600VC,N600VC SERIES,N600VC,N600VI SERIES

数据手册 - ATP - 2024/7/23 PDF 英文下载

ATP DDR4-2666 modules for Intel® Xeon® Scalable and 8th-generation Intel® Core™ Processors

型号- DDR4-2666

技术文档 - ATP - 2017/12/21 PDF 英文下载

【经验】什么是常见内存错误类型？ECC DIMM如何工作？

损坏的主内存可能会因性能下降或硬件崩溃而中断业务运营，从而导致代价高昂的停机时间。动态随机存取存储器（DRAM）模块通常具有解决存储器错误的内置机制。这篇文章回答了有关计算机内存错误的最常见问题，以帮助您确保关键任务系统中安装的DRAM的高实用性和最大的可靠性。ATP 可提供软错误可纠错的DRAM产品。

设计经验发布时间 : 2020-01-05

ATP（华腾国际）固态硬盘选型指南

描述- Since 1991, we have consistently distinguished ourselves as one of the world’s leading original equipment manufacturers (OEM) of high-performance, high-quality and high-endurance NAND flash products and DRAM modules.

型号- A750PI,S600SC,B800PI,S750 SERIES,S600SI,B600SC,N700PC,A750 SERIES,E650SC,N601,N651SI,A600VI,S800PI,E600VC,I800PI,A600VC,A650SI,A650SC,N651SC,N750,S650SI,A600VI SERIES,N750PI,N651SIE,A800PI,N601 SERIES,A700PI,N651SIA,N650 SERIES,E600SAA,A750,A600VC SERIES,N600SC,E600SA,E650SI,N750 SERIES,E700PIA,N600SI,S650,S650SC,N651SI SERIES,E700PAA,B600SC SERIES,E600SI,N600VI SERIES,I700SC,N600VI,N650SI,E600SIA,N650SC,E750PI,N600VC,I600SC,E750PC,N651,S700PI,A650 SERIES,N650,N751PI,S700PC,N600VC SERIES,N651 SERIES,S650 SERIES,A650,N601SC,S750PC,E700PI,A600SI,N700PI,E700PA,S750,S750PI,E700PC,N651SCE,A600SC

选型指南 - ATP - v1.0 - 022024 PDF 英文下载

ATP（华腾国际）DRAM存储模块和NAND闪存产品选型指南（英文）

目录- Company Profile Segment Challenges and Solutions Thermal Solutions Endurance Solutions Security Solutions CFexpress & USB 3.0 Value Line SSDs DDR5 DRAM SOLUTIONS FLASH SOLUTIONS Flash Products Naming Rule Solutions & Technologies Flash Technology Overview table Complete Flash Spec Overview & Product Dimensions

型号- A750PI,E650SC SERIES,S600SC,B800PI,S750 SERIES,S600SI,S600SCA,E750PC SERIES,B600SC,N700PC,S700SC,E650SC,A750 SERIES,E600VC,S800PI,A750PI SERIES,I800PI,A600VC,A650SI,A650SC,N700 SERIES,S650SI,N750,N750PI,A800PI,A700PI,N700SI,N650 SERIES,E600SAA,N700SC,A750,N600SC,A600VC SERIES,E600SA,E650SI,E650SI SERIES,N750 SERIES,E700PIA,TR-03153,N600SI,S650,S650SC,E700PAA,N650SIA,E600SI,B600SC SERIES,S750SC,S600SIA,I700SC,N650SI,N600VI,E600SIA,E750PI,N650SC,N750PI SERIES,N600VC,I600SC,E750PC,S700PI,A650 SERIES,N650,N600 SERIES,N600VC SERIES,S650 SERIES,A650,AES-256,E700PI,A600SI,E750PI SERIES,N700PI,E700PA,S750,S750PI,E700PC,A600SC

选型指南 - ATP - v1.0 - 012023 PDF 英文下载

ATP（华腾国际）DRAM存储模块和NAND闪存产品选型指南（中文）

目录- 公司简介细分市场挑战和解决方案热管理解决方案 TSE闪存解决方案 DRAM解决方案闪存解决方案闪存解决方案-固态驱动器和模块闪存解决方案-存储卡闪存解决方案-托管NAND 闪存产品命名规则闪存规范概述和产品尺寸

型号- A750PI,S600SC,N750PI系列,B800PI,S750 SERIES,S600SI,S600SCA,B600SC,N700PC,S700SC,N600,E650SC,E750,E750PC系列,E600VC,S800PI,I800PI,E750 SERIES,A600VC,A650SI,N600系列,A650SC,N700 SERIES,S650SI,N750,N750PI,A800PI,A700PI,N700SI,E600SAA,N700SC,A750,N600SC,A600VC SERIES,E600SA,E650SI,E700PIA,N600SI,S650,S650SC,E700PAA,N600VC系列,N650系列,N650SIA,N750系列,E600SI,S750系列,E650,N700,S750SC,S600SIA,I700SC,N650SI,N600VI,E650SI系列,E600SIA,E650SC系列,E750PI,N650SC,S650系列,N600VC,I600SC,E750PC,A600VC系列,A650系列,S700PI,N700系列,N650,N600 SERIES,N600VC SERIES,A750PI系列,S650 SERIES,A650,E700PI,E750PI系列,A600SI,N700PI,A750系列,E700PA,E650 SERIES,S750,S750PI,E700PC,A600SC

选型指南 - ATP - v1.0 - 012023 PDF 中文下载

ATP Exhibits at Embedded World 2024

Participants should not miss a visit to ATP’s Booth in Hall 1-210, where ATP once again demonstrates its commitment to redefine memory and data storage reliability, scalability, and efficiency. Attendees to Embedded World 2024 can expect to see a new breed of flash storage solutions with ATP’s 176-layer NAND flash innovation, industrial enterprise-readiness for Edge computing and artificial intelligence, and latest DDR5-5600 memory offerings.

厂牌及品类发布时间 : 2024-03-29