Alliance Memory Launched High-Speed CMOS DDR3 SDRAMs With 1Gb, 2Gb, and 4Gb Densities in 78-Ball and 96-Ball FBGA Packages

时间： 2023-09-08 来源：ALLIANCE News

技术问答

SAN CARLOS, Calif. — June 26, 2014 — ALLIANCE Memory introduced a line of high-speed CMOS double data rate 3 synchronous DRAMs (CMOS DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1Gb, 2Gb, and 4Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9mm by 13mm by 1.2mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800MHz.

With minimal die shrinks, the company’s DDR3 (1.5V) and DDR3L (1.35V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer, and telecom applications — eliminating the need for costly redesigns and part requalification.

The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs operate from a single +1.5-V (±0.075V) power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, and AS4C512M8D3L DDR3L SDRAMs operate from a single +1.35-V power supply. The devices are offered with a commercial temperature range of 0℃ to +95℃ and an industrial temperature range of -40℃ to +95℃.

The DDR3 and DDR3L SDRAMs are internally configured as eight banks of 64M, 128M, 256M, and 512M x 8 bits and/or 16 bits. The devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

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本文由涂抹转载自ALLIANCE News，原文标题为:Alliance Memory Launches New High-Speed CMOS DDR3 SDRAMs With 1-Gb, 2-Gb, and 4-Gb Densities in 78-Ball and 96-Ball FBGA Packages，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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TXN,AS4C64M16D1-6TXN,AS6CE4016B-45BIN,AS6C2016,AS6C1616B-45TIN,AS7C256B-XXPIN,AS7C1024B-XXJIN,AS7C34098A-XXTXN,AS7C1025B-XXJCN,AS4C256M16MD4-062BAN,AS4C16M16SB-6TXN,AS6C62256-55STXN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C256M16D4A-62BXN,AS6C8008-55ZIN,AS6C2008,AS6C4008-55STIN,AS6C2008-55TIN,AS4C16M16MSB-6BIN,M29F800FB5AN6F2,AS7C316096B-10BIN,AS4C8M16SA-7BXN,AS7C31026B-XXJCN,AS7C31025B-XXJCN,AS4C32M8SA-6TXN,AS7C32098A,AS4C64M32MD1-5BXN,AS7C38096A-10BIN,AS4C1G16D4-062BCN,AS4C1G8D4A-62BXN,AS6C1616B-55TIN,AS6C2008-55STIN,AS4C4M32S-7BXN,AS4C4M32D1A-5BXN,AS4C128M16D2-25BXN,AS6C8016B-45ZIN,AS4C4M32SA-6TXN,AS25F316MQ-10S1IN,AS7C32096A,AS6C1008-55PIN,AS4C16M16SB-7TXN,M45PE80-VMP6TG,AS4C4M32S-6BXN,AS4C4M16SA-5TXN,M29F400FT5AN6E2,AS4C32M16MD1A-5BCN,AS4C64M16D1A-6BIN,AS7C1026B,AS4C512M16D4A-62BAN,AS6C1008,AS7C513B,AS4C128M16D3C-93BCN,M29F800FB5AN6E2,AS6C6416-55BIN,AS4C512M32MD4V-046BIN,AS7C31025B-XXTJCN,AS9F14G08SA-45BAN,AS5F14G04SND-10LIN,AS6C3216A,AS7C1025B,AS9F34G08SA-25BIN,AS7C316096C-10TIN,N25Q032A13ESFA0F,AS4C32M8SA-7TXN,AS4C32M16SC-7TIN,AS4C16M32SC-7TIN,AS4C32M8SA-6 TXN,AS4C2M32SA-6TXN,AS6C6264-55SCN,AS4C32M16D1-5BXN,AS4C8M32SA-7BXN,AS7C1024B,AS7C34098B-10TIN,AS4C32M16D2C-25BXN,AS4C16M16D1-5BXN,AS7C31026B-XXTCN,AS4C4M32SA-7TXN,AS6C4016,AS7C3256A-XXJIN,AS9F18G08SA-45BAN,AS9F32G08SA-25BIN,AS7C256A-XXJIN,AS7C1026B-XXJCN,AS4C1M16S-7TXN,AS4C32M32MD1A-5BIN,AS7C38096B,AS4C64M4SA-7TXN,N25Q064A13EF8A0E,N25Q064A13EF8A0F,AS6C4008,AS4C64M8SC-7TIN,AS7C38096A,AS4C8M16D1A-5TXN,AS4C8M16D1-5BXN,AS4C256M8D2A-25BCN,AS7C4098A-XXTXN,AS5F32G04SNDA-08LIN,AS5F34G04SNDA-08LIN,AS6C1616B,AS4C16M32MD1-5BXN,AS4C1M16S-6TXN,AS4C512M16D3LA-10BXN,AS4C64M4SA-6TXN,AS4C8M16MSA-6BIN,AS6C2016-55BIN,M29F400FB55N3E2,AS4C8M32S-6 TXN,AS6C4016B-45ZIN,AS1C512K16PL-70BIN,AS7C316096C-10BIN,M29F400FB55N3F2,AS4C8M32SA-7 BXN,AS7C3513B-XXTCN,AS7C513B-XXTCN,AS4C1G8D4-75BXN,AS6C1008-55STIN,AS7C34098A-12JCNTR,AS4C512M8D3LC-10BAN,AS7C38098A,AS7C34098B-10BIN,M29F160FB5AN6F2,AS29CF800B-55TIN,AS6C2008-55BIN,AS62V256-70SIN,AS7C31024B-XXJCN,AS6C8016-55TIN,AS4C4M16SB-6TIN,AS4C32M8SA-7 TXN,AS4C16M32MSA-6BIN,AS6C1608B-45TIN,AS4C512M16D4-75BXN,AS6C4016B,AS6C8008-55BIN,AS6C6416,AS7C1025B-XXJIN,AS4C2M32SA-7TXN,AS4C8M32SA-6BXN,AS7C1024B-XXTCN,AS7C4096A-XXJXN,AS4C32M16D1-5TXN,AS7C316098A-10TIN,AS4C16M32MSB-6BIN,AS6C1616C-45TIN,AS5F32G04MND-08LIN,AS6C2008-55SIN,AS7C316096A,AS7C316096B,AS6C1608B,AS7C1024B-XXTJCN,AS6C6264-55SIN,AS4C8M32S-7 TXN,AS7C4096A,AS6C6264-55PCN,AS4C32M16D2A-25BXN,AS4C256M32MD4V-062BAN,AS4C256M16D4A-75BXN,AS7C316096C,N25Q032A13EF640F,AS1C2M16P-70BIN,AS4C64M8D3L-12BXN,N25Q064A11ESEA0F,AS7C3256A-XXJCN,AS7

选型指南 - ALLIANCE - 2024V2 - 2024/6/11 PDF 英文下载

AS4C256M16D3LC 256M x 16 bit DDR3L Synchronous DRAM (SDRAM)

型号- AS4C256M16D3LC-10BAN,AS4C256M16D3LC-12BANXX,AS4C256M16D3LC,AS4C256M16D3LC-10BANXX,AS4C256M16D3LC-12BAN

数据手册 - ALLIANCE - Rev 1.0 - Sept.2020 PDF 英文下载查看更多版本

AS4C256M8D3LC 256M x 8 bit DDR3L Synchronous DRAM (SDRAM)

型号- AS4C256M8D3LC,AS4C256M8D3LC-12BIN,AS4C256M8D3LC-12BC/INXX,AS4C256M8D3LC-12BCN

数据手册 - ALLIANCE - Rev. 1.0 - Nov.2020 PDF 英文下载

【产品】8Gbit双倍数据速率DDR3L同步DRAM（SDRAM）AS4C1G8D3LA，78-ball FPGA封装

Alliance Memory推出了一款结构为128M words x 8 bits x 8 banks、双倍数据速率（DDR3L）同步DRAM（SDRAM）AS4C1G8D3LA。采用双倍数据速率架构，每个时钟周期可传输两次数据，8位预流水线结构可实现高速数据传输。

新产品发布时间 : 2020-03-24

AS4C128M16D3C-93BCN AS4C128M16D3C-93BIN 128M x 16 bit DDR3 Synchronous DRAM (SDRAM)

型号- AS4C128M16D3C-93BIN,AS4C128M16D3C-93BCN

数据手册 - ALLIANCE - Rev 1.1 - May.2024 PDF 英文下载

Alliance New 16Gb DDR4 SDRAM Improved Performance Over Previous-generation DDR3 SDRAMs, with Higher Speeds and Transfer Rates of 1600MHz and 3200MT/s

Alliance Memory AS4C1G16D4-062BCN DDR4 SDRAMs deliver improved performance over previous-generation DDR3 SDRAMs, with lower power consumption down to +1.2V (±0.06V) and higher speeds and transfer rates of 1600MHz and 3200MT/s, respectively.

新产品发布时间 : 2023-02-16