BASiC Semiconductor Launched Pcore™6 – Automotive 3-Phase Full-bridge SiC MOSFET Module for New Energy Vehicles

时间： 2023-04-13 来源：BASiC Semiconductor News

技术问答

The automotive 3-phase Full-bridge SiC MOSFET Module Pcore™6 is designed and launched by BASiC Semiconductor based on the high-performance and high-efficiency requirements of power modules for core traction drivers from automobile manufacturers.

Part Number

• BMS600R12HWC4

• BMS400R12HWC4

• BMS700R08HWC4

• BMS450R08HWC4

Part Number

• BMS600R12HLWC4

• BMS400R12HLWC4

• BMS700R08HLWC4

• BMS450R08HLWC4

The product utilizes a standard package in an advanced press-type silver sintering connection process inside the power module with high-density copper wire bonding technology. The Pcore™6 series modules manufactured can effectively curb the temperature rise of the power device when being used in the main drive electronic controller and fuel cell energy management systems in electric vehicles, thereby increasing the output current by more than 10% under the same chip temperature.

Product Features

Trench-type, low R_DS(on)SiC MOSFET chip

Double-sided press-type silver sintering

Nanosilver dielectric layer with high thermal conductivity

High-density copper wire bonding technology

Die Top System (DTS) technology

Enhanced PinFin heatsinking structure

Fast dynamic response

Advantages

Parts lifetime extended by 5 times

System output capability improved by 10%

High power density

High blocking voltage

Low on-state resistance

Low switching loss

High reliability

Applications

New Energy Vehicles

Power drive systems for electric vehicles, railway, aircraft, submarine vehicles, etc.

Fuel cell power systems

Electric propulsion systems for mobile devices

Parameter List

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数据手册 - 基本半导体 - Rev. 0.1 - 2023-08-10 PDF 英文下载查看更多版本

基本半导体（BASIC）碳化硅功率器件选型指南

描述- 深圳基本半导体有限公司是中国第三代半导体行业创新企业，专业从事碳化硅功率器件的研发与产业化。公司总部位于深圳，在北京、上海、无锡、香港以及日本名古屋设有研发中心和制造基地。公司拥有一支国际化的研发团队，核心成员包括二十余位来自清华大学、中国科学院、英国剑桥大学、德国亚琛工业大学、瑞士联邦理工学院等国内外知名高校及研究机构的博士。

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