SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles

2021-10-14 fastSiC
SiC MOSFET,即思创意 SiC MOSFET,即思创意 SiC MOSFET,即思创意 SiC MOSFET,即思创意

SiC power devices have long been considered a perfect fit to electric vehicles (EVs). Toyota is the first to start road trials using SiC MOSFETs to drive traction motor in 2015.Later, Honda's fuel cell vehicles Clarity became the first mass-production vehicles adopting SiC instead of Si for the main inverter in 2017.Honda Clarity Fuel Cell,the Ultimate Zero-emissions Vehicle Technology and EPA Range of 366miles, up 58 Percent over the Previous Model.


And then, in 2018, Tesla became the first electric vehicle (EV) maker using SiC MOSFETs to replace Si IGBT in main inverters for its Model 3. Because of the popularity of Model 3 (total sales in 2019 over 300,000, about 13.6% of global plug-in vehicles sales), SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles.


Tesla Model 3 uses 24 small modules of 650V SiC MOSFETs provided by ST Microelectronics for its 150kW main inverter. Other major SiC manufacturers such as Cree/Wolfspeed, Rohm and Infineon have also announced collaborations with other automakers and tier 1 automotive suppliers.


With SiC inverters, it is possible to extend the range of EVs by 6~10% with the same size of battery pack, or maintain the same range with a smaller battery because of its high efficiency and high frequency operation capability. This gives automakers incentives strong enough to replace traditional Si parts even though SiC MOSFETs are still more expensive than Si IGBTs. It is unclear how soon other automakers will keep up with Tesla to replace Si IGBTs by SiC MOSFETs in their EVs, but it can be sure that SiC will continue to replace Si in EVs, not just in main inverters, but also on-board chargers (OBC) and DC/DC converters, probably faster than anticipated.New Silicon Carbide Semiconductors Bring EV Efficiency Gains.

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由Avatar转载自fastSiC,原文标题为:SiC is replacing Si in electric vehicles,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

SLKOR(萨科微)功率元器件和模块选型指南

目录- 公司介绍    碳化硅场效应管/碳化硅肖基特二极管/场效应管    超结场效应管/IGBT单管/可控硅    二极管    静电保护器件/瞬态抑制二极管    三极管/电源IC    运算放大器/达林顿晶体管阵列/整流桥/霍尔传感器    光耦/石英晶体谐振器   

型号- BTW69,MB10S,SL25T135FL,BTA26-1000,SL2306,SL2307,MB10F,SL2308,SMCJ440CA,SL2309,SL55X,SL40N60C,SL2310,SL2312,SL3400,SL54X,SL3402,SL3404,SL4614,RS1A,RS1M,SMF5.0CA,SS120F,SL13N50FS,MMBT4401,FMMT591,MMBT4403,SLESDL0603-24,LM317,2N5551,WE07DF-B,MMSZ5259B,SL2016384MXXX,S2MB,SL2301,SL2302,SL53X,SL2305,1SMB5921B,BTB20-600,SL322526MXXX,SL25N10,S2MF,SLESD8D36V,SL252025MXXX,SL201624MXXX,SLESD5Z5.0C,SL201616MXXX,2SK3018W,SL4949,SS52BF,2SB1261,SL10N65F,ZM4727,2SB1132,1SMA4777A,DB307S,SL1609SH,SL8N65F,SL05N06A,GBLC15CI,2SA812,SLESD8D15V,FMMT493,SMDJ170A,FMMT491,WE05DF-BS,2SC3357,SL78LXX,SL1609SL,SMF5.0A,US1AF,SL12020BT,MMBZ5221B,MMDL914,SL1609TH,SL05N06Z,RS2A,SL42764,SL1609TL,SL53N65CT,SS320BF,RS2M,SLESD5Z7V0,FMMT489,UMB10F,GBLC03CI,MM5Z2V0,MMBT5401,BT136-600,SS22,LMV321,SF1006DS,SL403,2N5401,SL6520B,SL12030BT,KBL4005,UMB1F,SMF58CA,SS32,SMBJ5.0,2SK3018,SMBJ170CA,KBL410,BTA60-1200,GBLC12CI,US2AB,SL322512MXXX,WE24DF-B,SS12,SL3N170AP,US2AF,SMF58A,SL503224MXXX,SL50T65FL,SL1619SH,SL322527MXXX,SL42744D,SL1619SL,SS210B,LM321,SLESDL0603-16,SL201632MXXX,GBU410,IRLML6401,BCP51,BCP53,BCP52,BCP55,BCP54,BZX84C43,BCP56,SL1619TH,SL2733,SL1619TL,SL52X,TL432,TL431,SS52,NUP2105LT1G,SL201625MXXX,SL49SM3579M20P-20,SL252026MXXX,BTA80-1200,SLESDL0603-05,BCP68,SLESD8D3V3,MMSZ5221B,TL431B,SL49SM26M20P-20,F1A,TL431A,DB207S,GBLC24CI,SS220F,2N7002E,BT136-800,F1M,SL85XXX,SL4822A,SL76N60CT,MC34063S,PC817,SL18N50F,SL2328A,BT137-600,MMBZ5262B,SM24C,SM36C,LMV358,RS3AB,SS310C,SS310B,DB107S,SM12C,DB301S,SL40T120FL,KBL610,SL40N65CF,SL80N65CTL,SL12005B,GBP4005,SL49SM25M20P-20,SL22N120A,SL002N02K,SLESD5Z24,MMDT2222A,US2MF,SL503225MXXX,US2MB,SL252024MXXX,SLESD3B5CM,SL05N10A,SL12P03S,C945,US2A,BFG520,SL252016MXXX,SL322532MXXX,SL2319A,SL40N65CT,SLESD5Z36,GBU6005,RS2AF,SL9013MXXXX,SS320F,US2M,SL73XX,ULN2803,SD20C,2SB1197K,SL4409N,ZMM2V0,SL12015B,SLESD5.0U035,US1A,SL10N120A,BTA08-600,SL0501,SL8205S,SL75T65FL1,US1M,SL80N120A,BAS316,2SD965A,S8550,SMBJ5.0C,S6AC,M1,BSS123,SL0601,LM2904,M7,SLPESD15VL1BA,LM2902,GBP3005,SL2309A,SLPESD0402M07,BT137-800,MM1Z39B,SLESD9B5.0ST5G,SLPESD0402M05,SMCJ440A,SMAJ5.0CA,SLPESD0402M03,GBU8005,BTA12-600,SLPESD2CAN,SM20C,RS5AB,SS520F,SL201630MXXX,MMDT3904,BSS138,BTA41-1600,FR101,MMDT3906,SL322525MXXX,SM4001PL,FR107,SMDJ5.0CA,BTA06-600,BZT52B51BS,SLPESD0402M18,SL17010BT,SL322530MXXX,SLPESD0402M16,WE12DF-B,SLPESD0402M12,SL15T65FL,MM5Z75,SMDJ5.0A,SL80N10,DB201S,SL54MXXXX,S1A,S5AC,SL12010B,S5AB,2SD1624,SL6206-XXMR,SMCJ5.0CA,S1M,B772,KBL6005,SMBJ170A,MMBT2222A,AMS1117-XX,SL75XX,DB101S,SL322524MXXX,GBP2005,S2A,BT138-600,2SC1815,SL10N10A,SLESD9B3.3S,SL4813A,S2M,SL002P02K,SL50N120A,SL9435A,SL4184,S10AC,SL80N65CT,1SMA4728A,RS5MB,BC857B,SLESD5Z15V,SL6508B,SL4264-2,ZMM200,MMDT2227,SL1625SL,SM08C,SL252030MXXX,SL20N10,GBU4005,SD03C,SD15C,SL1625SH,BC856B,BTA10-800,SL1625TL,SL306X,GBP210,BT169D,SL4284,SL4041,SL1625TH,SL1613SH,ABS2,BTA26-800,SS510B,ABS10,1N4001W,SS510C,SL6506B,S3AC,S3AB,KBP4005,2SC1623,2SC2712,SF1001DS,ES1JF,2SD1781,1SS226,BZT52B43,SL1613TL,SL305X,SS52F,SL1002B,BTA41-800,SD05C,SL4275,SL1613TH,SS52B,SS52C,S10MC,SS525,BT138-800,SLESD2401QC,2SD1898,BZT52C2V4S,SL2333A,SL100N03,DSK220,SL40N60CF,D882,ES2JF,GBP310,SL3N06,SL304X,SLM511,SL10P04S,SL49SM24M20P-20,BT139-600,1SS355,SL4N65F,S2AF,SL503212MXXX,SL3401S,1N4148W,S2AB,C1815,BTA04-600,ABS210,MMBT3904,ES2JB,KBP2005,MMBT3906,SL9945,MAC97A8,SL78XX,SL1623SL,ABS201,SL303X,MAC97A6,BAV99,SL17025BT,SLM501,SL2192,SLPESD0201M24,KBP210,BZT52B3V0BS,SL1623SH,RS1AF,BTA41-1200,SLESD5Z12V,MB1F,SL4407A,1SS181,BC848B,78MXX,SM15C,SS510BF,GBP410,SM03C,MB1S,SL-10XX,SL302X,LL4148,SLM611,SLPESD3V3L1BA,SLESD5Z2V5,SMAJ5.0A,MMBTA05,SL1623TH,MMBTA06,SL20T65FH,SL14N120A,SL1623TL,BT131-600,BC847B,SLPESD12VL1BA,2SC2873,DSK310,SL40T65FL,ES3JC,S8050,ES3JB,BAV70,MMBT2907,MCR100-8,BCX51,BSN20,MMBD4148,BCX53,SL301X,BCX52,BCX55,SLM601,SM18C,SLESD5B5CU,BCX54,SLM600,SL322516MXXX,BAV20W,BCX56,KBP310,SL7603PXXXX,SL2302M,SLESD8H5.0CT5G,IRF640,SL6800C,SL7N65CN,SD12C,SLESD8D5.0C,S9013,SD24C,S9014,S9015,BC846B,SL10N06A,S9012,BT139-800,SL7N65CF,KBP3005,SL7N65CD,MCR100-6,BZT52C2V4,SL7N65CI,SM05C,2N3904,SL3139,SS8550,SMAJ170CA,US1MF,BAV21W,SL8820,S9018,2N3906,SD36C,MM3Z75,BZT52C43S,BTB10-600,MMBTA55,SLW611,RS1MF,SL3134K,SS110,SS32BF,SL11N65CD,1N4007W,SL11N65CF,SL6512B,SL252012MXXX,SL8052A,SL1629SH,MM1W3V3,SL1629SL,KBP410,SL20162712MXXX,SLPESD5V0L1BA,SS22B,1N4148WS,SL60T65FL,1N4148WT,DSK32,SS22F,MMBTA56,SLW601,SM4007PL,MMBTA44,SL6540BT,MMBTA42,SL49SM6M20P-20,SL252040MXXX,SL36N120A,SL12040BT,SL201626MXXX,SL50N06D,SL1629TH,SL50328MXXX,SL827,BT151,BT152,SL1629TL,SL49SM8M20P-20,SL49SM27M20P-20,SL826,DSK22,SL11N65CQ,SL49SM12M20P-20,SL49SM16M20P-20,S6MC,SL49SM10M20P-20,2N7002,M1F,SLPESD0201M05,MMBT6517,SL322540MXXX,GBLC08CI,2SC5824,ES1K,2SC4617,GBU610,SL6510B,BZT52B2V4,SL12N65F,SL1605SH,ULN2001,SL1605SL,MM1W330,BSS84,BZX84C2V4,DSK12,MM3Z2V0,SL9193MXXXX,BAW56,SL21N65CF,ES1AF,SLPESD0201M03,SL25T120FL,BTA24-800,ULN2003,ES2A,SS12F,6N137,SL15N65CD,6N136,SL15N65CF,LM2575,6N135,LM2576,SMAJ170A,SMDJ170CA,SL851,SL252027MXXX,S5MB,SL1605TL,SL503216MXXX,

选型指南  -  SLKOR  - 2022/10/9 PDF 中文 下载

即思创意(fastSiC)碳化硅MOSFET和肖特基二极管选型指南

目录- SiC Schottky Diode&SiC MOSFET   

型号- FL12190A,FF06100G,FC06008D,FF06100F,FC06006A,FC06008C,FC06008B,FF06100D,FC06008A,FF06320B,FF06320A,FF06030Q,FF17900E,FH06010C,FH06020E-3,FL06320B,FH06020E-2,FL06320A,FC06006D,FC06016C,FC06006C,FF17900Q,FC06010C,FH06004C,FH06006C,FC06002X,FL06150A,FL06320G,FF061K4A,FF12040Q

选型指南  -  即思创意  - 2022/1/18 PDF 英文 下载

ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies

ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies.ROHM‘s products were essential to the development of a high reliability, high efficiency 3U20kW bidirectional large-capacity DC power supply.

应用方案    发布时间 : 2024-07-09

Product Brochure SiC Power Semiconductor and IC Solution

型号- IV2Q12040BD,IV1B12009HA2L,IV1D12030BD,IV2Q07014T4Z,IV1Q12050D7Z,IVST12017MA1L,IV2Q12100BD,IV1Q12017T4ZG,IV1Q12160T4Z,IVST12080DA1L,IVCR2405DR,IV2Q12040T4Z,IV1D06020BD,IVCR1412SR,IV2Q12013T6Z,IV2Q06060BD,IV1Q12080T3Z,IV2Q171R0BD,IVCO1A01DQR,IV1Q12750T3,IV2Q12030D7Z,IV1D12015BD,IV2Q07014BA,IV2Q07014BD,IV2Q12160T4Z,IV1D06006F5,IVCO1A01DR,IV1B12013HA1L,IVSM12040HA2Z,IVSM07060HA2Z,IV2Q12200T4Z,IV2Q06060L1,IV1D06010O2,IVCO1A02DWR,IV1Q12030BDG,IV1Q12080T4Z,IV1Q12750BD,IV2Q171R0T3,IVCC1102DR,IV1Q06060BDG,IV2Q12040K1Z,IV1D06020T2,IV3D12060U3,IV1Q12050T3,IV1D12020T2,IV1Q12080BD,IV1Q12050T4,IVST12050SA1L,IVCR2504DR,IV1Q12017BDG,IV1D06006BD,IV1D06004O2,IV1D12020T3,IV1Q06060D7G,IV2Q12160BD,IVCR2402DR,IV2Q12160D7Z,IV2Q06040BD,IV2Q12017BD,IV1D12040U3Z,IVCR1801ASR,IVCO1A02DWQR,IV2B12003HA2L,IV1D06020U3Z,IV1Q06040T4Z,IV2Q12017BA,IV3D12030U3,IV1Q06060T4ZG,IV2Q12013BD,IV2Q12013BA,IV1D12010O2,IVCC1102F4AR,IVCO1412DDWQR,IVST12040DA1L,IV1D06010T2,IVCR1401DR,IV2Q0606003Z,IV1Q12080T3,IV1D12020BD,IV1D12040U3,IV1D06004P3,IV1Q12080T4,IV3D12015T2,IV2Q12080D7Z,IVCR2404MPQR,IV2Q06025BD,IVTM12080TA1Z,IV2Q17020T4Z,IV2Q06040L1,IV3B20023BA2,IV2Q20045BD,IV3D12030T2,IV2D12002BD,IVCO1A02DQR,IV1D12005BD,IVSM12080HA2Z,IVCC1104F4AR,IV2Q06025T4Z,IV2Q06040T4Z,IV2Q06060O3Z,IV1Q06060T4G,IV1D12040T2,IV2Q12100D7Z,IV2Q171R0D7Z,IV2Q06025L1,IVST12050MA1L,IVST12160DA1L,IVCR2403DR,IV1Q06040BD,IV1Q12160T3,IV1Q12160T4,IV1B12025HC1L,IV1Q12017BAG,IV2Q12200D7Z,IVO1411DDWQR,IV2Q20045T4,IV2D12020T2,IV2Q12200BD,IV2Q06060T4Z,IV2Q12030T4Z,IV2Q12040D7Z,IV2D12020BD,IV1D12040BD,IV6212004HA2,IV1Q06060T3G,IVCR1407ASR,IV1Q12050BD,IV1Q12017T4G,IV1D12010T2,IVCR1402DPQR,IV1D06004F5,IV2B12006HA1L,IV1Q06040T4,IV1Q06040T3,IV1D06010BD,IV1Q12160BD,IV1Q12750O3,IV1Q06040L1,IV1Q12160D7Z,IVCC1104DR,IV2Q12080BD,IV2Q175S0BD,IV2Q06025D7Z,IV6212004HB2,IVSM06025HA2Z,IVST12017SA1L,IV1D20020T2,IV1D12030U3,IV1D06004BD,IV1D06006O2,IV2D12020D2Z,IV2Q06040D7Z,IV2Q12017T4Z,IVCR2404DR,IV2Q06060D7Z,IVCO1A01DWR,IV1Q12030T4G,IV2Q17020BD,IV3D12020T2,IV1D12010BD,IV2D12002P2,IV2Q12030BD,IVST12120DA1L,IV2Q12080T4Z,IV1D06020U3,IVCO1A01DWQR,IV1D12030T2,IVCO1A02DR,IVHD122M1TA2Z,IV1D06006P3,IV1Q12050T4Z,IVCR2404MPR,IV1D12010P2Z,IV2Q12100T4Z,IV1D0601002,IVCR1401DPR,IV1Q06060L1G,IV2Q12080K1Z,IV1Q12080D7Z,IV2Q171S0BD,IV1D20020BD,IV1D12015T2,IV2D12002O2,IVSM12160HA2Z,IV1D12005O2,IV2Q171S0S1

商品及供应商介绍  -  瞻芯电子  - March 2024 PDF 英文 下载

Achieve Zero Switching Loss with SiC MOSFET

A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies.The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology of China.

设计经验    发布时间 : 2021-10-16

【选型】CISSOID 晶体管/功率开关/二极管/线性稳压器/电压参考/DC-DC转换器/栅极驱动和马达驱动器/模数转换器/比较器/放大器/逻辑门/定时器/时钟发生器选型指南

目录- Company profile    DISCRETE    LINEAR VOLTAGE REGULATORS    DC-DC CONVERTERS    GATE DRIVERS AND MOTOR DRIVERS    MIXED SIGNAL comparator    AMPLIFIERS    LOGIC devices    OSCULLATOR&TIMERS   

型号- CMT-OPA,CHT-PMOS300X,CHT-74021,DIODES,10-BIT ULTRA LOW POWER ADC,CMT-74021,CHT-NMOS40XX,LINEAR VOLTAG E REGULATORS,CHT-AMAZON,TIMERS,EVK-HADES®,CHT-CG50-LP,CMT-7474,ADJUSTABLE LINEAR VOLTAG E REGULATORS,CHT-NMOS4005,CHT-74132,VESUVIO®,CMT-555,AMPLIFIERS,CHT-PALLAS,EVK-THEMIS-ATLAS,CMT-RHEA,SWITC HES,HIGH-SPEED,CHT-NMOS4010,TRANSISTORS,STROMBOLI,CMT-7486,EREBUS,CHT-NEPTUNE,DC-DC CONVERTER ICS,MERCURY,EREBUS-40,CHT-CALLISTO,CHT-NILE,CHT-HYPERION,PWM CONTROLLER,CHT-SNMOS80,EREBUS®,CHT-7474,DUAL NMOS TRANSISTOR,POWER MOSFET PMOS 30V,CONVERTERS,DIODES,CHT-LDOS-XXX,CHT-FUJI,SMALL SIGNAL MOSFET TRANSISTORS,FUJI,CMT-7408,CHT-PTC8,EREBUS-50,GATE DRIVERS AND MOTOR DRIVERS: TITAN,CHT-RHEA,CMT-7400,CHT-VOLGA,CMT-7404,VENUS,CHT-7400,DC-DC CONVERTER,CHT-7486,CHT-SPMOS30,CHT-555,CHT-7404,STROMBOLI®,TRANSCEIVERS,CHT-OPA,POWER MOSFET NMOS 80V,OSCILLATOR,COMPARATORS,SATURN,LINEAR VOLTAGE REGULATORS AND VOLTAGE REFERENCES: STAR,CHT-NMOS8005,CHT-BG3M-XXX,CHT-NMOS8001,CHT-NMOS80XX,CMT-7432,CHT-ADC10,POWER SWITCHES,BRIDGE ISOLAT ED SIC GAT E DRIVER,CHT-MAGMA,DUAL SMALL SIGNAL DIODES,8-BIT PROGRAMMABLE COMPARATOR,CHT-THEMIS-ATLAS,POWER MOSFET NMOS 40V,3A DUAL DIODE,CHT-PMOS3002,CHT-7408,CHT-LDOP-XXX,CHT-NMOS8010,CMT-THEMIS-ATLAS,CHT-GANYMEDE,EARTH,CHT-PMOS3008,VESUVIO,CHT-PMOS3004,CHT-MAGMA: VERSATI LE VO LTAG E-MODE PWM CO NTROLLER,DC-DC CONVERTERS: VOLCANO,CHT-BG03M,CHT-LDNS-XXX,DUAL ISOLAT ED TRANSCEIVER,VOL1088B,CHT-MOON,CHT-CG50,CHT-NMOS4020,HIGH-PRECISION DUAL OP AMP,CHT-7432,CHT-RIGEL,YELLOWSTONE,HADES®,OSCILLATOR & TIMERS: PULSAR,CMT-74132,AMPLIFIERS: GEMSTONE,CHT-VEGA,CHT-OPAL,DC-DC CONVERTER TECHNOLOGIES,CHT-LDN-025,MARS,CHT-AMALTHEA,CHT-74-4040,CHT-RUBY

选型指南  -  CISSOID  - 05/14 PDF 英文 下载

Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles

ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters.

厂牌及品类    发布时间 : 2022-07-21

Need a Charge? SiC MOSFET DIF120SIC053-AQ with Kelvin-Source Speeds Up the Process

The DIF120SIC053-AQ is a Silicon Carbide MOSFET by Diotec Semiconductor, dedicated to charging systems of electric vehicles. It features a high reverse voltage of 1200 V combined with an extremely low on-resistance of just 53 mΩ.

应用方案    发布时间 : 2024-06-13

650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET

Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The Rdson@100C is only 10% higher than Rdson@25C, enables better Rdson@100C*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (Rg,ext). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.

厂牌及品类    发布时间 : 2021-06-07

NOVOSENSE Released a New 1200V Series SiC Diode with Typical Fowrard Voltage of 1.39V, Contributing to the SiC Ecosystem

NOVOSENSE has launched a new 1200V SiC diode series, designed for applications such as photovoltaics, energy storage, and charging. The diodes offer exceptional efficiency in single- or three-phase PFC, isolated or non-isolated DC-DC circuits, meeting the needs of medium- and high-voltage systems.

新产品    发布时间 : 2023-08-10

The Medium Voltage MOSFET MMBF170L with a Appropriate Drain-source Voltage (60V), Continuous Drain Current (300mA)

MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω@10V, 500mA), and a lower threshold voltage (2.5V@ 250μA), making it an ideal choice for applications in power management, electric motor control, charging stations, and auxiliary electronic device control.

产品    发布时间 : 2024-03-16

即思创意650V增强型SiC MOSFET,可实现比GaN更好的品质因数(FOM)

即思创意推出的增强型碳化硅场效应管(SiC MOSFET),其输出电荷(Qoss)几乎是新一代超结硅MOSFET的1/10,接近氮化镓场效应管(GaN FET)水平。

厂牌及品类    发布时间 : 2021-07-01

What is SiC and why is SiC for power devices?

In SiC, because of its 10 times strength to withstand electric field, its theoretical specific on-resistance can be 200 times smaller than Si counterpart, which enables people to use SiC to manufacture high voltage devices with simple structures. Today, unipolar SiC power devices, including SiC MOSFETs and SiC Schottky rectifiers, have been commercialized for voltage rating up to 3300V, which is unreachable by any other semiconductor materials.

厂牌及品类    发布时间 : 2021-09-28

Now available in TO-247 with 3 or 4 leads, the SiC MOSFET

Diotec Semiconductor offers new SiC MOSFETs in TO-247 with 3 or 4 Leads, highly suitable for EV charging systems for electric vehicles, solar inverters, and telecom power supplies.

产品    发布时间 : 2024-03-06

ROHM‘s 4th Generation SiC MOSFETs to be Used in Hitachi Astemo‘s Inverters for Electric Vehicles, Contributing to Longer Cruising Range and Smaller Systems in Electric Vehicles

ROHM has recently announced the adoption of its new 4th Generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd., contributing to longer cruising range and smaller systems in electric vehicles both in Japan and overseas from 2025.

厂牌及品类    发布时间 : 2023-01-12

展开更多

电子商城

查看更多

只看有货

品牌:LITTELFUSE

品类:SiC MOSFET

价格:

现货: 4,395

品牌:森国科

品类:碳化硅功率场效应晶体管

价格:¥48.0000

现货: 512

品牌:澜芯半导体

品类:SiC MOSFET

价格:¥86.4000

现货: 500

品牌:澜芯半导体

品类:SiC MOSFET

价格:¥143.1000

现货: 500

品牌:森国科

品类:碳化硅功率场效应晶体管

价格:

现货: 500

品牌:澜芯半导体

品类:SiC MOSFET

价格:¥86.4000

现货: 500

品牌:澜芯半导体

品类:SiC MOSFET

价格:¥143.1000

现货: 500

品牌:LITTELFUSE

品类:SIC

价格:¥70.3020

现货: 201

品牌:瑶芯微

品类:SiC MOSFET

价格:¥28.6000

现货: 120

品牌:瑶芯微

品类:SiC MOSFET

价格:¥28.6000

现货: 120

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:CREE

品类:Silicon Carbide Power MOSFET

价格:¥30.2621

现货:287

品牌:CREE

品类:晶体管

价格:¥13.5799

现货:27

品牌:CREE

品类:Six Channel SiC MOSFET Driver

价格:¥2,765.7315

现货:3

品牌:CREE

品类:晶体管

价格:¥25.2282

现货:2

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面