SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles
SiC power devices have long been considered a perfect fit to electric vehicles (EVs). Toyota is the first to start road trials using SiC MOSFETs to drive traction motor in 2015.Later, Honda's fuel cell vehicles Clarity became the first mass-production vehicles adopting SiC instead of Si for the main inverter in 2017.Honda Clarity Fuel Cell，the Ultimate Zero-emissions Vehicle Technology and EPA Range of 366miles, up 58 Percent over the Previous Model.
And then, in 2018, Tesla became the first electric vehicle (EV) maker using SiC MOSFETs to replace Si IGBT in main inverters for its Model 3. Because of the popularity of Model 3 (total sales in 2019 over 300,000, about 13.6% of global plug-in vehicles sales), SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles.
Tesla Model 3 uses 24 small modules of 650V SiC MOSFETs provided by ST Microelectronics for its 150kW main inverter. Other major SiC manufacturers such as Cree/Wolfspeed, Rohm and Infineon have also announced collaborations with other automakers and tier 1 automotive suppliers.
With SiC inverters, it is possible to extend the range of EVs by 6~10% with the same size of battery pack, or maintain the same range with a smaller battery because of its high efficiency and high frequency operation capability. This gives automakers incentives strong enough to replace traditional Si parts even though SiC MOSFETs are still more expensive than Si IGBTs. It is unclear how soon other automakers will keep up with Tesla to replace Si IGBTs by SiC MOSFETs in their EVs, but it can be sure that SiC will continue to replace Si in EVs, not just in main inverters, but also on-board chargers (OBC) and DC/DC converters, probably faster than anticipated.New Silicon Carbide Semiconductors Bring EV Efficiency Gains.
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目录- 公司介绍 碳化硅场效应管/碳化硅肖基特二极管/场效应管 超结场效应管/IGBT单管/可控硅 二极管 静电保护器件/瞬态抑制二极管 三极管/电源IC 运算放大器/达林顿晶体管阵列/整流桥/霍尔传感器 光耦/石英晶体谐振器
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Product Brochure SiC Power Semiconductor and IC Solution
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ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies
ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies.ROHM‘s products were essential to the development of a high reliability, high efficiency 3U20kW bidirectional large-capacity DC power supply.
即思创意（fastSiC）碳化硅MOSFET和肖特基二极管选型指南
目录- SiC Schottky Diode&SiC MOSFET
型号- FL12190A,FF06100G,FC06008D,FF06100F,FC06006A,FC06008C,FC06008B,FF06100D,FC06008A,FF06320B,FF06320A,FF06030Q,FF17900E,FH06010C,FH06020E-3,FL06320B,FH06020E-2,FL06320A,FC06006D,FC06016C,FC06006C,FF17900Q,FC06010C,FH06004C,FH06006C,FC06002X,FL06150A,FL06320G,FF061K4A,FF12040Q
【选型】CISSOID 晶体管/功率开关/二极管/线性稳压器/电压参考/DC-DC转换器/栅极驱动和马达驱动器/模数转换器/比较器/放大器/逻辑门/定时器/时钟发生器选型指南
目录- Company profile DISCRETE LINEAR VOLTAGE REGULATORS DC-DC CONVERTERS GATE DRIVERS AND MOTOR DRIVERS MIXED SIGNAL comparator AMPLIFIERS LOGIC devices OSCULLATOR&TIMERS
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Need a Charge? SiC MOSFET DIF120SIC053-AQ with Kelvin-Source Speeds Up the Process
The DIF120SIC053-AQ is a Silicon Carbide MOSFET by Diotec Semiconductor, dedicated to charging systems of electric vehicles. It features a high reverse voltage of 1200 V combined with an extremely low on-resistance of just 53 mΩ.
【产品】雪崩耐受性强的碳化硅MOSFET FF06030系列，具有更高的系统效率，允许使用高温应用
即思创意推出的碳化硅MOSFET–Falcon Series FF06030具有快速切换行为的优化RDS(on)，能够与标准栅极驱动器兼容，雪崩耐受性强。其具有更高的系统效率，允许使用高温应用并进行高频操作，可靠性高，符合RoHS标准且无卤素。
Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles
ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters.
The Medium Voltage MOSFET MMBF170L with a Appropriate Drain-source Voltage (60V), Continuous Drain Current (300mA)
MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω@10V, 500mA), and a lower threshold voltage (2.5V@ 250μA), making it an ideal choice for applications in power management, electric motor control, charging stations, and auxiliary electronic device control.
What is SiC and why is SiC for power devices?
In SiC, because of its 10 times strength to withstand electric field, its theoretical specific on-resistance can be 200 times smaller than Si counterpart, which enables people to use SiC to manufacture high voltage devices with simple structures. Today, unipolar SiC power devices, including SiC MOSFETs and SiC Schottky rectifiers, have been commercialized for voltage rating up to 3300V, which is unreachable by any other semiconductor materials.
SiC MOSFETs from ROHM Chosen by Lucid for Efficient On-board Charging of Groundbreaking Luxury Electric Vehicle
ROHM has announced that Lucid is using its silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) in the ground-breaking Lucid Air.
Now available in TO-247 with 3 or 4 leads, the SiC MOSFET
Diotec Semiconductor offers new SiC MOSFETs in TO-247 with 3 or 4 Leads, highly suitable for EV charging systems for electric vehicles, solar inverters, and telecom power supplies.
650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET
Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The Rdson@100C is only 10% higher than Rdson@25C, enables better Rdson@100C*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (Rg,ext). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.
ROHM（罗姆）功率器件选型指南
描述- SiC Devices Contribute to Greater Energy Savings and Set Miniaturization. As an SiC pioneer and the first supplier in the industry to mass-produce and ensure a stable supply of SiC power devices, ROHM is uniquely positioned to contribute to solving issues on a global scale by achieving energy-saving systems through innovative technologies and power solutions.
型号- SCT3030KLHR,RGS30TSX2DHR,RFV12TG6S,R6009JND3,SCT2450KEHR,R6507KNJ,RGW40TK65,RGS60TS65DHR,R6025JNZ,R6025JNX,SCT3022KLHR,R6507KNX,SCT3022AL,R6509KND3,RD3L140SP,R8005ANJ,GMR,SCT3080KR,SCT3120AL,SCT4013DW7,BSM180D12P3C007,R6047KNZ4,RD3H045SP,RGTH40TK65,BSM400D12P2G003,BM61M41RFV-C,SCT2280KEHR,R8006KND3,SCT2280KE,R6009ENX,RSS070N05,SCS240AE2HR,RGW80TK65,R8007AND3,BM2SC123FP2-LBZ,RGTV60TS65D,SCT4045DEHR,RGT50NS65D,SCT3120AW7,SCT4018KW7,SCS312AJ,R6003KND3,SCS312AH,RSJ451N04,R6009ENJ,SCT3080KL,BSM600C12P3G201,SCS312AM,SCT3030ALHR,RGS80TSX2HR,RSS060P05,SCT3022ALHR,RSJ301N10,RGT40TM65D,RGPR20BM36HR,RGCL80TK60,RGS00TS65DHR,R6024KNZ4,RFV5BM6S,RGW00TS65D,BM2SCQ121T-LBZ,RGTH80TK65,SCT4036KW7HR,SCS240AE2,R6547KNZ4,SCT2160KEHR,BSM400C12P3G202,RD3P175SN,R6035VNX,R6070JNZ4,LTR10L,BM6112FV-C,RGTH80TK65D,RFNL10TJ6S,RGTH50TS65D,RD3L150SN,RGW60TS65HR,R6511KND3,R6024VNX3,RGW50TK65D,RGS80TSX2,R6004KNX,RGTVX6TS65,SCT4036KEHR,SCT2160KE,R6004JNJ,R6030JNZ4,R6524ENZ,RGWX5TS65D,R6524ENX,R8002KNX,RGC,R6014YNX,RGPR10BM40FH,RGTV80TK65,R6515KNX3,R6524ENJ,SP8K2,SCS210KE2,SP8K3,RGCL80TK60D,RD3U041AA,RD3P130SP,RGT,RGS,RGT20NL65,R6011ENX,R6015KNX,R6015KNZ,RGW,RFVS8TG6S,SCT3030AW7,RGCL60TK60D,RSS070P05,R8003KNX,R6035ENZ4,RGT00TS65D,RD3S100AA,R5205PND3,RGPR20NS43HR,R6049YNX3,SCS215AJ,R6020ENZ4,RRS050P03,R6004KNJ,R6576KNZ4,SCT4026DW7,R6006PND3,SCS215AG,SCS230KE2HR,R6000ENH,RGW00TK65,RFS30TZ6S,BSM180C12P3C202,SCS302AJ,R6015KNJ,SP8M6,SCS302AH,BD7682FJ-LB,RGW60TS65,SP8M4,SP8M5,RGT16BM65D,R6011ENJ,SP8M3,BSM180D12P2C101,LHR SERIES,RFL60TZ6S,RGW50TS65,R8009KNX,R6007ENX,BSM600D12P3G001,R6504KNJ,R6077VNZ,RFVS8TJ6S,BM2SCQ122T-LBZ,RFL60TS6D,R6027YNX3,SCS230AE2,R6007ENJ,R6504KND3,SCT4045DRHR,RD3L050SN,PSR400,SCT3080ALHR,RGTH50TS65,SCS210AG,R6035KNZ,SCT4062KRHR,SCS210AJ,RGW80TS65DHR,RGT8NS65D,RGPR50NL45HRB,R6515KNX,R6515KNZ,SCS210KE2HR,RGT40NL65D,SCS215KG,GMR SERIES,R6030ENZ,R6030ENX,R6010YNX,R6004JND3,R6504KNX,R6030KNZ4,R6507KND3,RGW SERIES,R8002CND3,RGTV60TK65D,R6014YND3,R6011KNX,SCS220AJ,R6007END3,RD3P050SN,SCS220AG,RGW60TK65D,RGC80TSX8R,RSJ400N10,R6511ENX,R6511ENJ,SCT4045DW7,SCT4036KE,R6515KNJ,SCT4045DE,BM2SCQ124T-LBZ,R6530ENZ,SCT3080AR,R6530ENX,R6055VNX,SCT3080AL,SCT4045DW7HR,R6018VNX,R6055VNZ,SCT4045DR,RGW80TS65CHR,RGCL,R6011KNJ,RSJ400N06,RGWX5TS65EHR,RGS60TS65HR,BSM300D12P3E005,RGT80TS65D,RGPZ30BM56HR,R8011KNX,SCS205KG,RGW00TS65HR,R6530KNZ4,RGT50TS65D,R6535ENZ4,RGSX5TS65E,RGT30NL65D,BM6109FV-C,RGW80TK65E,RGW80TK65D,SCT3017ALHR,RGPR30NS40HR,RGS00TS65EHR,R6012JNX,SCS212AJ,P04SCT4018KE-EVK-001,SCT4036KR,SCS212AG,RGT8TM65D,RFNL5TJ6S,SCS320AM,RGS50TSX2,RGCL60TK60,R6020ENX,R6024KNX,R6020ENZ,R6011KND3,R6524KNZ4,RGCL80TS60D,RGTV00TK65D,RSS065N06,R6024KNZ,SCS320AJ,SCS320AH,RGT8BM65D,R6520ENZ4,RGTH00TS65D,RGTV60TS65,RGTV00TK65,BM2SC121FP2-LBZ,RGWX5TS65,R6509ENJ,R6020ENJ,R6530KNX3,SCT4036KRHR,R6024KNJ,R6050JNZ4,RGTH60TK65,RFNL20TJ6S,RFV12TJ6S,R6535KNZ,RGT60TS65D,RGT16NS65D,SP8M24,SCT2080KEHR,SCS310AM,SCS310AJ,R6509ENX,SP8M21,RGS50TSX2HR,SCT4062KW7,PSR100,R6010YNX3,R6012JNJ,SCT3040KW7,RRS140P03,SCS310AH,SCT4062KEHR,R6076ENZ4,R6022YNX,RGT50NL65D,RFS60TZ6S,RGW80TS65EHR,SCT3105KL,RGCL60TS60D,RFL30TZ6S,RJ1U330AA,SCS210AJHR,RGTV80TS65D,SCT3105KR,PMR,BSM180D12P2E002,R6524KNX3,R8001CND3,RGTH00TS65,RGSX5TS65HR,R6035KNZ4,BSM300C12P3E201,SCS308AJ,SP8M41,R6020JNJ,SCS308AM,RGTH40TS65,BM2SCQ123T-LBZ,GNE1015TB,RGW40TS65,R6520ENX,R6524KNX,R6520ENZ,BM6101FV-C,RGSX5TS65DHR,RGS30TSX2D,R6524KNZ,R8006KNX,BM61M22BFJ-C,SCT3060AR,BD7684FJ-LB,BSM180C12P2E202,SCT3060AL,SCT4026DEHR,RGTH60TS65D,R6520ENJ,R6009END3,R6524KNJ,RD3L080SN,R6035VNX3,SCT3030KL,PMR03,SP8M31,RFNL5BM6S,RFV8BM6S,R6020KNZ4,R6002END3,R6020KNX,BM61S41RFV-C,R6020KNZ,RGT40TS65D,PMR01,R6006KND3,RGW80TS65,R6015ENZ,BSM300C12P3E301,RGT50TM65D,RD3P200SN,R6007JNJ,RGW60TS65D,R6020KNJ,BSM120C12P2C201,RGCL SERIES,RFV15TG6S,SP8K22,SP8K24,PMR18,LHR,R6042JNZ4,PMR10,SCT4018KE,RGTH80TS65,RGTVX2TS65D,RGS30TSX2,SCT4026DE,R6004ENJ,R6018JNX,R6004ENX,SP8M51,RGCL80TS60,R6047ENZ4,RGS80TSX2DHR,SCT4018KR,SCT4026DR,R6030JNZ,R6509END3,PMR25,R6015ENJ,R6502END3,R6030JNX,SCS308AH,SCS210KG,RGPZ10BM40FH,RFV8TG6S,RGT20NL65D,R6007JNX,R6015ENX,R8002KND3,BM64378S-VA,SCT3160KL,RGS80TS65HR,SCT4013DE,RFV5BGE6S,SCT3080AW7,R6009JNX,R6020JNZ4,RFNL15TJ6S,SCT2450KE,R6507ENJ,R6009JNJ,SP8K41,RD3H080SP,RD3H200SN,SCS220AE2,R6007KND3,RGS80TS65DHR,R6030ENZ4,R8019KNX,SCT4013DR,RGW00TS65,BM6102FV-C,BSM120D12P2C005,R6507ENX,RFV15TJ6S,RGT30TM65D,SCS220KE2HR,RGW80TS65D,RSJ250P10,LTR SERIES,R6020YNX,SCT3040KR,SP8K31,SP8K32,RRS090P03,BM65364S-VA,LHR18,R6022YNX3,PSR,R6547ENZ4,R6511KNX,BM65364S-VC,R6024ENZ4,SP8K33,SCT4036KW7,RGS50TSX2DHR,R6576ENZ4,RGTV80TS65,RGTV00TS65D,RFNL5BGE6S,RGWX5TS65DHR,SCS240KE2HR,BM2SC122FP2-LBZ,RGPR30BM40HR,R6009KNJ,BSM300D12P2E001,SCS212AJHR,P05SCT4018KR-EVK-001,SCT3040KL,BM64377S-VA,R6086YNZ,R8002ANJ,RGTVX6TS65D,RGTH40TS65D,RGS80TSX2D,R6511KNJ,PSR500,SCT3017AL,RGSX5TS65EHR,BSM250D17P2E004,R6006JND3,R6061YNX3,RGW40TK65D,SP8K52,GNE1007TB,RGS00TS65HR,SCT3080KLHR,RGT16TM65D,RD3U080AA,R6009KNX,SCT4026DRHR,SCS206AJHR,R6020JNX,RGW60TK65,R6038YNX3,R6020JNZ,RGT
COHERENT ISSUES ITS ESG REPORT 2023 AND SETS A NET ZERO GREENHOUSE GAS EMISSIONS TARGET OF FY2040
Coherent considers that all its employees and entire supply chain contribute to the company’s ESG performance. The company supports standardization of ESG reporting, and its report is indexed according to the SASB (Sustainability Accounting Standards Board) framework. Coherent reports its GHG emissions and water usage publicly through CDP and supports its customers’ requests for ESG information through standard surveys such as those from EcoVadis and RBA. Management of Coherent is overseen by a highly qualified and diverse Board of Directors.
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
实验室地址： 西安 提交需求>
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