【技术】MOSFET常见的八种失效原因和解决方法

时间： 2023-06-09 来源：华轩阳电子 MOSFET公众号

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MOSFET在使用过程中，可能会出现各种失效情况，须了解各种失效原因及其解决方法。以下是华轩阳电子常见的八种电子元器件失效情况及对应解决方法。

雪崩失效：当电压过高时，会导致漏源间击穿，使得元器件发生雪崩失效。为了避免这种情况的发生，可以通过降低电压、设计吸收电路或选择合适的栅极电阻来解决。

SOA失效：如果超出安全工作区，就会导致过流、过热、热击穿等问题，造成SOA失效。为了避免这种情况的发生，需要保证功率限制条件、设计过流保护功能，以及增加散热器或风扇等措施。

二极管失效：寄生二极管破坏会导致续流问题，为了解决这个问题，可以选择快速体二极管特性的MOSFET，或者串联两个背靠背的MOSFET。

谐振失效：栅极和电路寄生参数引起的震荡会导致谐振失效问题。为了避免这种情况的发生，可以插入栅极电阻、采用同步驱动或平衡驱动方式等方法。

静电失效：人体或设备静电损坏器件是常见的静电失效原因，要避免这种情况的发生，需要采取防静电措施，增加接地线或金属网等。

栅极击穿：栅极电压过高会导致栅极与衬底反向击穿，造成栅极击穿失效。为了避免这种情况的发生，可以限制栅极电压，或者串联限流电阻来解决。

漏极击穿：漏极电压过高会导致漏极与衬底反向击穿，造成漏极击穿失效。为了避免这种情况的发生，可以限制漏极电压，或者串联限流电阻等方法。

热失控：温度升高会导致沟道电阻降低，形成正反馈循环，从而造成热失控。为了避免这种情况的发生，可以增加散热措施、减小工作电流和功率等方法。

总之，在设计和使用电子元器件时，须对各种失效原因和解决方法有认识和了解，以避免出现损坏或安全问题。

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本文由ll转载自华轩阳电子 MOSFET公众号，原文标题为:MOSFET的常见失效原因和解决方法，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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