【产品】采用先进多层外延工艺的高压超结MOSFET RMX65R系列，有效助力电源系统实现节能降耗

时间： 2022-10-28 来源：亚成微电子官网

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功率半导体器件一直被广泛应用于通信、汽车、消费电子和工业领域，特别是近年来节能减排、新能源的兴起，使其市场规模持续扩大。随着人们对环保的日益重视，行业开始向着更加节能的方向发展，电源系统高效率小型化逐渐成为新的市场需求。

为了满足这种新需求，亚成微推出了新型高压超结MOSFET-RMX65R系列，该系列采用业内先进的多层外延工艺，全面提升了器件的开关特性和导通特性，比导通电阻（Ronsp）和栅极电荷（Qg）更低，开关速度更快，且电磁干扰（EMI）性能更好，可使产品获得更小的芯片面积、更优的参数性能、更高的竞争性价比，有效的助力电源系统实现节能降耗，特别适用于快速充电器、LED电源、服务器电源、电动车充电桩等系统。

亚成微RMX65R系列超结功率MOSFET是根据SJ原理设计的一种高压功率MOSFET技术。该系列采用先进的多层外延工艺，与传统沟槽工艺的超结MOS相比，工艺控制更好，产品参数稳定，EMI更低，适用于需要高功率密度和卓越效率的应用。

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本文由江枫转载自亚成微电子官网，原文标题为:亚成微推出新型高压超结MOSFET，助力电源系统节能降耗，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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