SiC SBDs SCS308AH from ROHM Chosen by Murata Power Solutions for Data Center PSUs
ROHM has announced that Murata Power Solutions is using its high-performance SiC Schottky Barrier Diodes (SiC SBD) to increase performance and reduce the size of Data Center PSUs. ROHM’s SiC SBDs, SCS308AH feature high surge resistance and short recovery time, enabling high-speed switching.
Murata’s D1U front-end AC-DC power supply series include many active units such as the D1U54P-W-2000-12-HB3C and D1U54P-W-1200-12-HC4PC, highly-efficient power-factor-corrected front-end power supplies that provide 12V main and 12V/3.3V standby output. Multiple units can share current and operate in parallel. The power supplies support hot-plugging and are protected from fault conditions such as over-temperature, over-current, and over-voltage. What’s more, the low profile 1U package makes them ideal for delivering reliable, efficient power to servers, workstations, storage systems, and other 12V distributed power systems while minimizing the number of required power modules.
Dr. Longcheng Tan, Senior Electrical Engineer and project leader, Murata Power Solutions.
By moving to SiC devices, we are able to develop power supplies with higher efficiency and higher power density. We can push the switching frequency of SiC devices higher to reduce the volume of passive components and heatsinks. Murata Group has a special procurement department for evaluating different SiC device vendors and their products. ROHM was chosen, mainly because their products are reliable. Samples were also available for prototyping, and ROHM provides prompt support. Their performance of the SBDs is excellent and we are now in mass production with the D1U power supplies. Murata is also using ROHM’s SiC MOSFETs in 3-phase inverter development projects, and the performance of those SiC MOSFETs are satisfying.
Jay Barrus, President, ROHM Semiconductor U.S.A.,LLC
We are excited to help Murata Power Solutions, a Murata Manufacturing Group company that leads the industry in the field of industrial equipment including power supply systems. We are the leading company in SiC power semiconductors and have achieved a significant technological lead in this field along with the provision of power solutions combined with gate driver ICs.
Together with Murata Power Solutions, we want to further improve the energy efficiency of power supply systems by using the full potential of SiC technology for industrial and data infrastructure.
ROHM has been a leader in SiC device technology and products since it began the world's first mass production of SiC MOSFETs. ROHM’s latest 3rd generation of SiC SBDs, which have been adopted by Murata Power Solutions, offer greater surge current capability while further reducing the industry’s smallest forward voltage of its 2nd generation SBDs. The total capacitive charge (Qc) of ROHM's SiC SBDs is small, reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes where the trr (reverse recovery time) increases along with temperature, ROHM’s SiC devices maintain constant characteristics. Also, ROHM’s SiC SBDs allow manufacturers to reduce the size of industrial equipment and consumer electronics, making them ideal for use in power-factor correction circuits and inverters.
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本文由翊翊所思转载自ROHM News，原文标题为:SiC SBDs from ROHM chosen by Murata Power Solutions for Data Center PSUs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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填料SiC SBD TO-263AB（LPTL）
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目录- SiC MOSFETs
型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KE,SCT4036KW7,SCT2280KEHR,SCT2280KE,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4036KW7HR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT3105KL,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR
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【元件】采用自主设计封装，绝缘电阻显著提高！ROHM开发出支持更高电压xEV系统的SiC肖特基势垒二极管
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A-012。无桥PFC Vin=200V，Iin=2.5A，BCM Rohm解决方案模拟器原理图信息
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型号- SCT3160KL,SCS208AG,SCT2280KE,SCT4013DE,SCT3030AL,SCS206AG,SCT2450KE,SCS205KG,SCT2H12NZ,SCS220AG,SCS320AHG,SCT3040KL,SCS220KG,SCT3080KL,SCS315AHG,SCT3017AL,SCT4036KE,SCT2160KE,SCT4018KE,SCT2120AF,SCT4045DE,SCS308AHG,SCT3022AL,SCS306AHG,SCS304AHG,SCS310AHG,SCS215AG,SCT4026DE,SCS210AG,SCS302AHG,SCT3060AL,SCS212AG,SCT3080AL,SCT2080KE,SCT3022KL,SCT3120AL,SCT3030KL,SCT3105KL,SCS215KG,SCT2750NY,SCT4062KE,SCS210KG,SCS312AHG
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型号- SCS220A
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