Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

时间： 2022-08-16 来源：EPC

代理服务

技术支持

现货查询

批量订货

48 volts is increasingly being adopted as the new standard for computing data centers and consumer electronics such as laptops. The new USB PD3.1 standard is also making inroads into laptops driven in part by the increase in USB voltage to 48V increases the total power delivery up to 240W given a current limit of 5A for the connectors and cables. Compatible power supplies using the new USB PD standard also face increasing pressure to yield a small form factor solution driving the need for high power density. The fast-switching speed and low R_DSon of GaN FETs address this challenge in multiple circuits that make up the power supply.

The EPC9171 is a demonstration board designed to address all these design challenges and help jump-start your project. It features a low stage count approach for a universal AC voltage Input to 15V through 48V DC output with a load current limit of 5A suitable for USB PD3.1 power supplies. The EPC9171 supports operation in Extended Power Range (EPR) Mode and achieves a power density of 1.1W/cm³, operated at high switching frequencies, in both the primary and secondary circuits.

AC input power supplies require a PFC front end AC to DC converter to meet AC grid harmonic requirements, an isolation stage to meet safety requirements, and a post regulator to meet load requirements. Each converter stage adds losses and increases the overall size of the converter. The design of the EPC9171 takes a unique approach to achieving high power density and high efficiency by employing an interleaving boost converter PFC stage followed by an isolated LCC resonant power stage as shown in Figure 1.

Figure 1: EPC9171 system block diagram.

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由董慧转载自EPC，原文标题为:Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

【经验】GaN FET在激光雷达驱动器中的参数设计指导

本文中给出的激光雷达驱动器采用EPC公司的开发板EPC9126进行设计。EPC9126/EPC9126HC采用最优的PCB layout，EPC9126采用GaN FET—EPC2016C，在极短的4ns脉冲宽度，给三接面激光产生35A脉冲。EPC9126HC为大电流演示系统，在 8ns脉冲宽度可产生65A脉冲。文中给出了具体设计的参数指导。

2020-06-13 - 设计经验代理服务技术支持现货查询批量订货

How to Use the GaN FET Thermal Calculator to Boost Reliability and Shorten Time-To-Market in Power Electronics System Designs

This article tells about how to use EPC‘s GaN FET Thermal Calculator to boost reliability and shorten time-to-market in Power Electronics System Designs. they are smaller, they switch faster, and have lower on-resistance resulting in greater efficiency than their silicon counterparts.

2022-05-18 - 设计经验代理服务技术支持现货查询批量订货

How to Design a 2kW 48V/12V Bi-Directional Power Module with GaN FETs for 48V Mild Hybrid Electric Vehicles

This artical tells how to Design a 2kW 48V/12V Bi-Directional Power Module with GaN FETs for 48V Mild Hybrid Electric Vehicles. A new reference design demo board, EPC EPC9165, is available to help jump start the design of a 2 kW bi-directional converter.

2022-09-01 - 设计经验代理服务技术支持现货查询批量订货

【IC】EPC提供100V GaN FET助力实现更小的电机驱动器，用于电动自行车、机器人和无人机

EPC推出三相BLDC电机驱动逆变器参考设计EPC9194，工作输入电源电压范围为14V~60V，可提供高达60Apk的输出电流。此电压范围和功率使该解决方案非常适合用于各种三相BLDC电机驱动器，包括电动自行车、电动滑板车、无人机、机器人和直流伺服电机。

2023-11-07 - 产品代理服务技术支持现货查询批量订货

【应用】EPC车规级GaN场效应管EPC2203应用于激光雷达，脉冲电流可达17A，漏源耐压值可达80V

本文主要介绍EPC汽车级GaN场效应管EPC2203在激光雷达上的应用，主要用在激光雷达发射部分，用于控制激光器的快速开关，优势：漏源耐压值可达80V；持续电流1.7A，最大脉冲电流17A；漏源电阻仅80mΩ，可有效降低系统损耗等。

2022-12-21 - 应用方案代理服务技术支持现货查询批量订货

Demonstration Board EPC9182 Quick Start Guide

型号- EPC9182

2023/1/17 - EPC - 用户指南 - Revision 1.0 代理服务技术支持现货查询批量订货

【视频】EPC发挥其GaN技术优势，将帮助实现高效能电机驱动应用和DC/DC转换器

型号- EPC9173,EPC2302,EPC2304,EPC2306,EPC2305,EPC2308,EPC2307,EPC23102

EPC - 商品及供应商介绍代理服务技术支持现货查询批量订货

EPC GaN FET助力DC/DC转换器实现功率密度和效率基准

EPC GaN FET与Analog Devices驱动器和控制器相结合，为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。

2024-02-29 - 应用方案代理服务技术支持现货查询批量订货

【元件】使用EPC新款50V GaN FET设计更高功率密度的USB-C PD应用，尺寸仅为1.8 mm²

EPC推出了50V、8.5mOhm的EPC2057 GaN FET，尺寸仅为1.5mm x 1.2mm，为USB-C PD应用提供了更高的功率密度。加利福尼亚州埃尔塞贡多—2024年6月—EPC是增强型氮化镓(GaN) 功率FET和IC的全球领导者，推出了50V、8.5mΩ的EPC2057。该GaN FET专为满足高功率USB-C设备的不断发展需求而设计，包括消费电子、车载充电和电动出行设备。

2024-06-26 - 产品代理服务技术支持现货查询批量订货

【元件】EPC推出首款具有最低1mΩ导通电阻的GaN FET EPC2361，采用紧凑型QFN封装（3mmx5mm）

EPC推出采用紧凑型QFN封装(3mmx5mm)的100V、1mOhm GaN FET(EPC2361)，助力DC/DC转换、快充、电机驱动和太阳能MPPT等应用实现更高的功率密度。

2024-02-29 - 产品代理服务技术支持现货查询批量订货

Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC

EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057aN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.