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PANJIT Gen. 2 SGT MOSFETs, Ideal for DC-DC Converter Topologies in Brick Power Modules
PANJIT launches a series of Gen. 2 SGT MOSFET targeting to provide efficient design solutions for DC-DC converter topologies in brick power modules. It is a 100V SGT series with 18 parts of standard level and 17 parts of logic level.
【产品】时科新推GaN整合IC SKGI8020/SKGI8120,支持最小化PCB,适用于65W PD快充
時科作为全球工程师的优质战略合作伙伴,为满足市场需求,推出新品GaN整合IC SKGI8020、SKGI8120,是65W PD快充的最佳解决方案。
【IC】宝砾微降压控制器PL84052助力PD快充新设计,超高集成度显著加快研发速度
宝砾微电子推出的降压转换器 PL84052,通过集成两个 13mΩ MOS 管,内置2A驱动电路,大大简化了产品的设计应用的同时提高转换效率。该芯片还支持 2 V~32 V 宽范围电压输入,支持更全面的PD快充产品应用,助力PD快充产品实现多样化和高兼容性。
深圳锐骏半导体股份有限公司(Ruichips)公司简介
描述- 深圳锐骏半导体股份有限公司(Ruichips)是一家专注于功率半导体研发、生产、销售的高新技术企业。公司拥有60余名员工,其中研发人员占比45%。产品涵盖适配器快充、移动电源、车充、直流电机等多个应用领域,年销售额突破数亿人民币。公司致力于新产品研发,产品自主率高达95%以上,拥有四大类产品线和数百种型号。公司注重研发投入,持续优化销售网络,致力于成为中国分立器件领导品牌。
型号- RU3070L,RUH40130M,RU4090L,RUH60100M,RU60E5D,RUH3051M2,RUH110N90M,RU65R160M,RU205B,RUH30200M-C,RU40L10H,RU6080L,RU6888S,RUH30120M,RU8205G,RU6888R,RU6888M,RUH1H150S,RUH1H150R,RUH1H80M,RUH3051M,RUH1H80R,RUH85210S,RUH40140M,RU65R740L,RUH115N90M,RUH4040M2,RU2020H,RUH30100M,RU2060L,RU40L10L,RU3020H,RU65R360M,RU65R340P,RU207C,RU65R450M,RU8590R,RU8590S,RU3089M-C,RUH30120M-C,RU6070L,RU8205C6,RU6050L,RUH6088M,RUH30150M,RUH120N90M,RUH4060L,RUH4080M,RUH40P40BM2-R,RU7570L,RU60D10H,RU20P7C,RU65R260M,RU20P3B
HI-SEMICON深鸿盛公司介绍 以奋斗者为本,争做半导体功率器件领航者
型号- SFM0420T4,SFN3009T,SFS0407T4,SGD15N10,SFN3006PT,SFS300T12,SFD2006T,SGM6008T,SFM0320T4,SGD10HR20T,SFD6008T,SGS6001T4,SFN3003PT,SFQ0320T4,SFQ0420T4,SGM041R8T,SFM4009T,SFM041R1T,SFS4525T
蓝箭电子(BLUE ROCKET ELECTRONICS)分立器件和集成电路产品选型指南
目录- 产品发展介绍 DFN封装系列MOSFET SOT&SOP&TO系列封装MOSFET 高压MOSFET及SJ MOSFET/LDO及三端稳压系列产品 锂电池保护/充电管理IC系列产品 二极管和三极管系列简介 小信号新品系列 应用案例
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京东旗下首款氮化镓65W双口PD快充,内置真茂佳ZMS040N10N MOS管
京东京造推出了一款65W氮化镓快充充电器,输出采用ZMJ真茂佳ZMS040N10同步整流。大大降低了整流器的损耗,提高变换器的效率,满足低压、大电流整流的需要。
【视频】蓝箭电子低内阻薄型表面贴装功率SGT MOSFET,适用于PD快充和储能逆变
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基于屏蔽栅沟槽技术的低损耗SGT MOSFET,100%雪崩击穿测试保证UIS/EAS能力 | 功率器件专场 世强硬创新产品研讨会
型号- GTM503N030LS,GSM05C,GSM05CM,GTM303N095LS,GSM15C,GDM510N040LS,GTM510N082L,GDM510N065LS,GTM503P055LS,GSM20C,GSM12C,GSM24C,GSD15C,GDM510N090LS,ESD5Z5V0,GDM512N070LS,GESD5B5CM,GDM515N090LS,GTM503P140LS,ESD5Z24V,ESD5Z12V,GSD24C,GSD12C,GTM303P080LS,GSD20C,GESD8D12V,GESD8D24V,GTM503N015LS,GESD8D5V0,GESD0501CM,GTM503N095LS,GTM503P080LS
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恒芯半导体产品介绍
描述- 恒芯半导体专注于功率器件的研发与制造,提供高效的技术、产品及测试支持。公司产品涵盖沟槽型功率MOS、屏蔽栅功率MOS、超结功率MOS、IGBT等,满足不同市场电荷参数需求。公司致力于实现国家功率半导体产业自主可控,愿景成为中国功率半导体知名品牌企业。产品应用领域广泛,包括消费类、网络通信、工业控制及汽车电子市场。
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探讨SGT MOSFET击穿电压BV
反向击穿电压是功率器件最重要的电学参数之一,限制了器件正常工作状态下能承受的最大反向电压。与传统VDMOS相比,同等反向耐压下SGT MOSFET的外延层掺杂浓度更高,导通损耗更小。
N60V SGT MOSFET新品
描述- 该资料宣布了一种新型元器件产品,具备多种封装选项(DFN、PDFN、TOLL),适用于紧凑型设计。产品特点包括过流能力强、热阻低和宽范围的SOA特性,特别适合于电机驱动、BMS和移动储能等应用。
型号- YJG80G06B,YJT300G06H,YJQ70G06A,YJG210G06AR,YJG85G06H,YJT220G06H,YJG95G06B,YJG140G06A,YJG85G06B
HRP49N08 80V N沟道SGT MOSFET
描述- 该资料详细介绍了HRP49N08型80V N-Channel SGT MOSFET的特性,包括其关键参数、电气特性、热阻特性、开关特性、典型特性等,并提供了应用领域和绝对最大额定值。
型号- HRP49N08
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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