【产品】基于屏蔽栅沟槽技术的低损耗SGT MOSFET，100%雪崩击穿测试保证UIS/EAS能力 | 视频

时间： 2021-03-29 来源：世强

技术问答

随着手机市场支持的电池容量和充电速度提升，PD充电器的市场占有量比重在充电器市场将会越来越高；目前市场上以18W、25W、30W、65W的PD充电器为主流，目前在PD快充的同步整流、Buck Boost与负载开关中不乏MOSFET的使用，且优质的PD快充还会配备抗浪涌、雷击原件。为此，高特提供了一套较为完善的方案与您共同探讨。

基于屏蔽栅沟槽技术的低损耗SGT MOSFET，100%雪崩击穿测试保证UIS/EAS能力

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terrydl Lv9. 科学家 2022-01-04

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江天子 Lv5. 技术专家 2021-04-29

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