【产品】TO-251封装150V的N沟道沟槽式MOSFET TMU02N15AT,漏源导通电阻的最大值为300mΩ
TMU02N15AT是无锡紫光微电子推出的漏源电压为150V的N沟道沟槽式MOSFET。该产品采用沟槽功率MOSFET技术,电气性能出色,漏源导通电阻和栅极电荷较低,产品的损耗较低,切换速度较快。TMU02N15AT采用TO-251封装,适用于DC/DC转换器以及AC/DC转换器。
图1 TMU02N15AT的产品图及符号图
TMU02N15AT的特点:
沟槽功率MOSFET技术
低导通电阻
低栅极电荷
针对快速切换应用进行了优化
最大额定值方面,25℃的温度条件下,TMU02N15AT的连续漏极电流和脉冲漏极电流分别为2A/8A。栅源电压为±20V,对栅极有较好的保护作用。单脉冲雪崩能量为3mJ,雪崩电流为2A,抗浪涌性能较好。25℃下的耗散功率为2W。工作结温和存储温度为-55~150℃,符合工业级温度要求。
TMU02N15AT的结壳热阻为15K/W,结至环境的热阻为65K/W,散热能力较好。漏源导通电阻的最大值为300mΩ(VGS=10V),导通损耗较低。漏源体二极管的反向恢复时间的典型值仅10ns,器件的开关速度较快。
图2 TMU02N15AT的电气参数图
TMU02N15AT的应用:
DC/DC和AC/DC转换器中的同步整流
电信和工业中的隔离式DC/DC转换器
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无锡紫光微(UNIGROUP)SJ MOS/SJ-Multiepi MOS/VD MOS/Trench MOS/DT MOSFET选型指南
目录- SJ MOSFET SJ-Multiepi MOSFET VD MOSFET Trench MOSFET DT MOSFET
型号- TPD60R1K0C,TMP11N60H,TMA28N50HS,TPA70R1K5M,TMD4N50H,TPV60R350C,TSB15N10A,TPU50R5K0D,TPW60R075C,TMA9N70H,TPR60R580C,TMA45N30H,TPW60R160M,TPB70R135MFD,TTB95N68A,TPU65R600M,TMP20N40H,TMP12N65H,TMJ2N50HF,TMU3N55LT,TMA8N90H,TMA45N50HS,TTD100N04AT,TMS05P35H,TPU65R600C,TPW90R350A,TMP30N25H,TPD65R4K3C,TMD5N30H,TMA12N50HF,TMA8N50HFE,TMP10N80H,TPP65R380C,TPA60R260MFD,TMW35N60H,TPW55R060D,TMA3N65H,TPV60R240M,TMA3N65L,TMA3N65M,TMA3N65N,TTD85N03AT,TPA70R600M,TPD50R5K4CT,TPW65R044MFD,TMU6N60H,TPD65R450CFD,TMP12N40H,TPA110R550A,TTU03P06ATS,TPU65R1K5M,TSP180N03A,TPY70R1K5C,TMA9N95H,TPA65R940C,TMA4N100H,TPA65R2K2C,TPA70R1K5C,TMU2N55CT,TMA8N50HF,TMA8N50HE,TTP90N03AT,TMA3N66H,TMU5N80H,TPP80R750C,TMA8N50HH,TPU73R400M,TMP12N43H,TMX05P35H,TMA13N65H,TTX2305A,TPB60R580C,TPU60R7K5C,TPD65R2K7C,TMA20N60H,TMP7N65HS,TTP115N08A,TMA08N60HS,TPV65R085CFD,TPA65R190MFD,TPU65R1K2C,TPP65R160C,TMW3N150H,TPB65R300MFD,TPW50R060DFD,TPP100R500A,TPU65R950M,TMP20N65H,TPD65R280D,TMA4N55LT,TPW100R800A,TMA12N60H,TPU70R700C,TMU8N65H,TPP70R260M,TMV25N55H,TPV70R190MFD,TPC80R1K2C,TPB65R750C,TPD65R2K6C,TPA60R170MFD,TPV70R090M,TMA3N55HT,TPA80R250A,TSG10N06A,TPU55R6K5C,TMA28N30H,TPA50R700C,TSJ10N06AT,TPA73R300M,TPU50R5K4C,TSU10N06A,TMP30N10HT,TTB65N10A,TTJ12N04AT,TPA65R170M,TSP12N06A,TPC60R150C,TMA8N70H,TPB50R400C,TTU05P03ATS,TMC6N70H,TMP15P20H,TPP60R260MFD,TMA8N65HS,TSD12N06AT,TMW9N90H,TPP60R600MFD,TMP13N40H,TPW70R120M,TMD7N53HE,TMP1N60C,TMP140N10A,TPP65R360M,TMR12N50H,TTD18P10AT,TPA65R280D,TPV73R300M,TMB160N10A,TMP110N06H,TPW65R100MFD,TTU01P10ATS,TPD55R2K1C,TMD3N50H,TMD2N70H,TSG10N06AT,TPU50R360D,TMP12N60H,TPD60R1K4M,TMU1N50LT,TPU60R360MFD,TMA12N65H,TMU7N65M,TMA10N80H,TTU08N02ATS,TPA70R950C,TPA70R950M,TMP9N90H,TPA60R330M,TMU7N65H,TPC80R1K5C,TMA11N60H,TMP2N60H,TMA20N50HS,TMA3N120H,TMU4N80H,TPD70R360M,TMP4N60HS,TTG130N03GT,TPU50R250C,TTP70N07A,TPV50R060C,TPY70R1K4C,TPP70R170M,TPC60R700C,TPB65R1K2C,TMU4N40HT,TPA70R1K4C,TMA4N55HT,TMV2N60HF,TPA50R2K3C,TMP12N60HS,TPD65R940C,TPG65R365MH,TMV9N90H,TMA13N68H,TPB65R090M,TMU03N60HT,TPD60R840C,TPD65R2K2C,TPU70R2K8C,TTU95N68A,TTP95N68A,TPP65R600M,TMU1N50HT,TMA4N60H,TPC65R380C,TPD70R1K5M,TMA40N20H,TPD60R1K8C,TMA3N80H,TPP65R070D,TTP100N04AT,TSG010N03AT,TPA100R500A,TTD120N03AT,TPP65R075DFD,TPP65R600C,TMU8N60H,TPC50R690C,TMA4N60N,TMA4N60L,TMA4N60M,TMD2N65HT,TPB80R300CFD,TPP65R950M,TMU08N50HT,TPW60R036M,TTD65N04AT,TPA120R800A,TMP162N04H,TPP60R2K5C,TPP70R700C,TPA60R600MFD,TPA80R300A,TMU1N50C,TPP80R1K2C,TPA80R300C,TPW80R300C,TPB65R400MFD,TMU1N50H,TMA5N65H,TMV8N120H,TMD2N50H,TPC70R260M,TMB120N08A,TPA65R520D,TMP120N08A,TPB100R800A,TPP60R700C,TPD70R950M,TMA12N45H,TMA2N50HF,TMU2N55L,TMA10N60N,TPD70R950C,TMD2N50CF,TPP65R700MFD,TMA10N60H,TMW6N90H,TMP50N06HT,TPD80R2K2C,TSG10N06ATC,TPP70R190C,TPP80R1K5C,TPW110R800A,TPP110R550A,TMA2N65H,TPA65R9K2C,TMP25N055H,TPP65R1K2C,TPD70R1K4C,TMD5N50NF,TTP120N02GT,TMP6N90H,TTG40P02ATC,TPD60R1K7C,TMA18N70H,TMA1N60H,TPU65R380C,TPD70R600M,TMP16N25H,TPU80R750C,TTU04N08ATS,TPW70R300MFD,TPA50R500C,TTD28P10AT,TMP8N50L,TMA11N65H,TPA60R1K0C,TMA4N60HF,TPD70R1K5C,TMP8N50H,TMA9N90H,TTP50P06AT,TPV100R500A,TMD8N60H,TMP20N60H,TPU55R2K9C,TPD65R400MFD,TMB140N10A,TPC65R360M,TMA3N60H,TMU9N20H,TPU50R1K8C,TPV80R300CFD,TMP38N30HF,TMA6N65HH,TPB70R120M,TPA60R530M,TMP5N100H,TMA5N20H,TPA73R190M,TPR70R120M,TPU60R600MFD,TPV73R190M,TPU60R2K2C,TPC50R250C,TMA25N50C,TTP118N08A,TMU7N60H,TMA4N65M,TMA4N65N,TMP3N100H,TMU7N60L,TMU1N50CT,TMY1N60H,TMA4N65H,TMP1N20H,TSB12N10A,TMA4N65D,TSU12N06A,TPD55R2K9C,TMA25N50H,TMA3N100HE,TPP60R360MFD,TMC10N65H,TMY1N60B,TPP50R500C,TPW70R044MFD,TPB70R400MFD,TMA10N40L,TTD135N68A,TMW9N95H,TPU50R1K6C,TPV65R080C,TTB80N04AT,TSP045N10A,TPU80R1K2C,TMA10N40H,TMD7N60HF,TPP60R190A,TMA85N08H,TMP15N40H,TTK8205,TPB90R350A,TPC60R350C,TMA12N50NF,TPA120R1K5A,TTG65N10A,TTP115N68A,TMA10N65N,TSP12N10AT,TPB70R450C,TMA6N65HS,TPP65R1K5M,TMA10N65H,TPU50R1K5C,TPC60R240M,TMA18N50H,TPD60R3K4C,TMA2N60H,TPB65R380C,TMD1N65H,TPR65R260M,TMU5N50CF,TPA80R1K2C,TPA65R400MFD,TMV28N55H,TPP80R270M,TMW57N10H,TMA16N60H,TPA65R280DFD,TMD8N55HE,TPP60R580C,TTP150N02GT,TMU3N50H,TSP15N06A,TPP120R800A,TMC10N60N,TPW50R065CFD,TPA70R190MFD,TMP6N40H,TTD120N02GT,TMC10N60H,TMU2N70H,TTP120N03AT,TMU6N60HF,TTJ05P04AT,TMP8N25H,TMU2N70L,TMU5N30HT,TPA70R450C,TMA9N20HT,TMP2N50HT,TMU2N70N,TPC65R940C,TPB65R100MFD,TMA18N20H,TPU60R3K4C,TMV10N90H,TMU02N15AT,TPA80R300CFD,TSU12N10AT,TPW60R260MFD,TPC70R1K5C,TMA25N55H,TMA4N90H,TPV60R190A,TMU1N55LT,TMW45N50HF,TPA55R2K1C,TPD50R500C,TPA60R3K4C,TPC70R950C,TMD8N50H,TMA3N50LT,TPA60R160M,TSG12N06AC,TTP60N10AT,TMA7N55H,TMP7N65M,TPA65R450CFD,TMA5N70H,TPR70R360M,TPA80R1K5C,TSP15N08A,TPU60R1K7C,TMA7N50LF,TPV60R080M,TMD9N20LT,TSG12N06AT,TPC70R1K4C,TMU4N55C,TPY70R1K5MB,TPW65R170M,TPW110R500A,TMA6N50H,TPU80R1K5C,TMU2N50HT,TMS1N40HT,TMP16N65H,TTP55N12A,TPA80R180M,TPU60R1K8C,TPP65R280DFD,TMV20N65H,TSD10N06AT,TMD7N70H,TPW50R055D,TPD50R700C,TPB65R450CFD,TMV3N150H,TMZ1N60B,TMP2N50CT,TPC65R170M,TPW60R120MFD,TPB65R360M,TMW25N50H,TPP50R1K8C,TTG60N03QTC,TPA70R120M,TPP80R300CFD,TMC12N65H,TMD8N53HE,TTD110P03AT,TMZ1N60L,TMV20N60H,TMV11N90H,TMP50N
【产品】用于DC/DC同步整流的双N沟道增强型功率MOSFET FS8205A,漏-源导通电阻典型值低至19.5mΩ
台舟电子推出了双N沟道增强型功率MOSFET FS8205A。该产品采用了沟槽式功率技术,低导通电阻、低栅极电荷等特点。主要应用于DC/DC和AC/DC转换器的同步整流,以及电信和工业中的隔离式DC/DC转换器。
【经验】以TMP120N10A为例说明MOSFET并联使用的注意事项
TMP120N10A是无锡紫光微电压100V的N沟道沟槽式MOSFET。该产品阻抗小、开关快,并联使用非常适合于低压、大电流情况下工作,主要应用于开关电源、硬开关、电机驱动、高频电路和不间断电源。本文以TMP120N10A为例,说明MOSFET并联使用需要关注的点。
【选型】国产无锡紫光微Trench MOS助力大功率步进电机驱动电路设计
大功率步进电机的驱动是通过各相有节拍的通断电流来实现的,步进电机转速完全由脉冲频率决定。而功率MOSFET为压控器件,导通压降低、耐压高、导通电流大;导通速度快,且需求的驱动电流小,是步进电机驱动电路的优选器件。无锡紫光微电子有限公司研发生产的Trench MOS为量产产品,耐压VDS范围覆盖20-150V,ID电流范围2-260A(25℃),具有较低导通电阻RDS及导通电荷,可满足客户的选型需求
【选型】国产N沟道沟槽式MOSFET TMP80N10A在电动截止阀门中设计,可替换FMC80N10R6
考虑到供应保障和降成本需求,化工行业提出来核心器件国产化替代,电控阀门厂商在新设计截止阀门驱动器中采用紫光微TMP80N10A,Vdss/Id 值为100V/80A,封装也为TO-220,但静态参数漏源导通电阻RDSON低,动态参数栅级总电荷小、输入电容Ciss小等特性非常适合做F品牌替代设计。
【选型】紫光微100V N沟道沟槽式MOSFET应用于1-3KW小功率UPS,Trr低至62ns
UPS主要作用是稳压、稳频、抗电磁干扰和射频干扰、防浪涌冲击等作用来保护后端负载设备的安全用。本文重点介绍在1-3KW小功率UPS中DCDC部分国产化MOS的选型推荐。
【产品】TSSOP-8封装的20V N沟道沟槽式MOSFET-TTK8205A,25℃下耗散功率仅1.5W
TTK8205A是无锡紫光微电子推出的漏源电压为20V的N沟道沟槽式MOSFET,采用了沟槽功率MOSFET技术,具有低漏源导通电阻和低栅极电荷的特点,针对快速切换应用进行了优化,适用于DC/DC转换器,AC/DC转换器。
【产品】150V N沟道沟槽式MOSFET TMD17N15A/TMP17N15A,静态漏源导通电阻最大仅85mΩ
TMD17N15A/TMP17N15A是漏源电压150V的N沟道沟槽式MOSFET,采用TO-252/TO-220封装,符合RoHS标准。产品针对快速开关应用进行了优化,导通电阻和栅极电荷较低。
【产品】TO-220封装的100V N沟道沟槽式MOSFET TMP120N10A,单脉冲雪崩能量达1000mJ
TMP120N10A是无锡紫光微电子推出的漏源电压为100V的N沟道沟槽式MOSFET。该产品采用超低导通电阻的高密度单元设计,可充分界定雪崩电压和雪崩电流,高EAS使产品有高稳定性。该产品主要应用于电源开关,硬开关和高频电路,不间断电源。
【产品】TO-263封装的100V N沟道沟槽式MOSFET TMB140N10A,漏源导通电阻最大仅7.0mΩ
TMB140N10A是无锡紫光微电子推出的漏源电压最大额定值为100V的N沟道沟槽式MOSFET。该产品采用超低导通电阻的高密度单元设计,可充分界定雪崩电压和电流,高EAS使产品有高稳定性,符合RoHS标准,对环境友好,主要应用于电源开关,硬开关和高频电路,不间断电源。
【产品】60V N沟道MOSFET TTB145N06A,TTP145N06A,经过100%UIS测试,采用沟槽功率技术
无锡紫光微电子推出的 N沟道MOSFET TTB145N06A,TTP145N06A,经过100% UIS测试,采用沟槽功率技术,具有低RDS(ON),低栅极电荷等特点,漏源电压为60 V,结温和存储温度范围为-55 ℃至 175 ℃,可应用于 DC / DC和 AC / DC转换器中的同步整流,电信和工业中的隔离式 DC / DC转换器等领域。
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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