200V, 10mΩ GaN FET EPC2307 Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

时间： 2023-02-03 来源：EPC News

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Efficient Power Conversion (EPC) introduces the 200V, 10mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200V, 10mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

The EPC2307 is footprint compatible with the previously released 100V, 1.8mΩ EPC2302, the 100V 3.8mΩ EPC2306, the 150V, 3mΩ EPC2305, the 150V, 6mΩ EPC2308, and the 200V, 5mΩ EPC2304 allowing designers to trade off R_DS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

The devices feature a thermally enhanced QFN package with an exposed top. The extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behavior, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market.

This family of devices brings several benefits to motor drive designs including very short deadtimes for high motor + inverter system efficiency, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for a lower cost.

For DC-DC conversion applications, these devices offer up to five times higher power density, excellent heat dissipation, and lower system costs in both hard switching and soft switching designs. Additionally, ringing and overshooting are both significantly reduced for better EMI.

“The continued expansion of this family of footprint-compatible, easy-to-assemble devices provides engineers the flexibility to optimize their designs quickly without delaying time-to-market,” said Alex Lidow, EPC’s co-founder, and CEO. “This family of devices is ideal for smaller, lighter weight motor drives, more efficient and smaller DC-DC converters, and higher efficiency solar optimizers and microinverters.”

development board

The EPC90150 development board is a half-bridge featuring the EPC2307 GaN. The purpose of these boards is to simplify the evaluation process and speed time to market. The 2” x 2” (50.8mm x 50.8mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.

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本文由玄子转载自EPC News，原文标题为:200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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【经验】GaN FET在激光雷达驱动器中的参数设计指导

本文中给出的激光雷达驱动器采用EPC公司的开发板EPC9126进行设计。EPC9126/EPC9126HC采用最优的PCB layout，EPC9126采用GaN FET—EPC2016C，在极短的4ns脉冲宽度，给三接面激光产生35A脉冲。EPC9126HC为大电流演示系统，在 8ns脉冲宽度可产生65A脉冲。文中给出了具体设计的参数指导。

2020-06-13 - 设计经验代理服务技术支持批量订货

Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC

EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057aN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

2024-06-13 - 产品代理服务技术支持批量订货