DDR5 RDIMM Launched by SMART, Data Rate up to 4800MT/s, 32/64GB Capacity Optional


SMART's DDR5 Value RDIMMs are designed to meet increasing needs for efficient performance in a wide range of applications including cloud computing and data center processing. The DDR5 specification provides developers with twice the performance (4.8 to 6.4 Gbps data rate) and improved power efficiency in comparison to DDR4 by using an on-DIMM 12V voltage regulator (PMIC) and 1.1 I/O Voltage.
DDR5 also improves scaling performance without degrading channel efficiency at higher speeds. This increased performance is achieved by doubling the burst length to BL16 and bank count to 32 from 16. For increased reliability and efficiency, a DDR5 DIMM boasts two 40-bit fully independent sub-channels on the same module. DDR5 Memory Modules have a maximum die density of 64Gb and hence are capable of having a much higher DIMM storage capacity.
Featured Technologies
· Anti-Sulfur Resistor
· Conformal Coating
· Underfill
Solutions
· Telecommunications
· Networking
· Storage
· Data Center
· HPC
Features
· Command/Address and Control bus is the double data rate
· Generates CRC checksum in reading data frames
· Default burst length increased to BL16 – Single burst = 64B of data
· Integrated Temperature Sensor (MR4)
· DDR5 DRAM contains 256 mode registers
Benefits
· Higher Bandwidth, DDR5 initial designs 4800 MHz
· Lower Power
· Better power efficiency and scalability
· Higher memory efficiency, lower latency
· Higher capacity DIMMs
Specifications
· Technology: DDR5
· Module Type: RDIMM
· Temperature: C-temp: 0˚C to 70˚C
· Component Configuration: 4Gx4
· Depth: 4Gb/8Gb
· Width: x80
· Voltage: 1.1V
· Pin Count: 288-Pin
· Capacity: 32GB/64GB
· Data Rate: 4800MT/s
· Speed: PC5-38400
· CL: CL = 40
· RoHS: Yes
· Height: 31.25mm
Ordering Information
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本文由荆菱雪转载自SMART,原文标题为:DDR5 Value RDIMM - ST4098RD540405-SB,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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DDR5内存模块
DDR5内存模块旨在满足云计算、数据中心处理等应用对高效性能的需求。与DDR4相比,DDR5内存提供双倍的性能(4800至6400 MT/s)和改进的功耗效率,通过使用12V电压调节器(PMIC)和1.1 I/O电压。DDR5内存模块具有更高的带宽、更低的功耗和更高的容量,适用于高性能计算、云计算和存储、企业网络等领域。
SMART - DDR5 ECC UDIMM,DDR5 RDIMM,DDR5 NON-ECC SODIMM,DDR5 ECC SODIMM,DDR5 ECC VLP UDIMM,DDR5 MEMORY MODULES,DDR5非ECC SODIMM,DDR5 VLP RDIMM,DDR5内存模块,SR2G7UD5285SBV,SR6G7UD5385HM,SRI2G7UD5285SBV,SR6G7UD5388HMV,SR6G6SO5385MB,SR4G7SO5285SB,SR2G7SO5288HA,SRI2G7UD5285SB,SR6G7UD5388HM,SR4G8RD5285SBV,SR4G7SO5288SB,SR4G8RD5288HAV,SR6G7UD5385HMV,SR6G6SO5385HM,SRI4G7SO5285SB,SR3G6SO5385HM,SR6G7SO5388HM,SR4G7UD5288SB,SR4G8RD5285SB,SRI2G7SO5285SB,SR4G7UD5285SB,SR2G7UD5288SBV,SRI6G7UD5385MB,SR4G7UD5285SBV,SR2G7UD5288SB,SR6G8RD5388HMV,ST4G7SO5285SB,SR2G7UD5285SB,SRI4G7UD5285SBV,SR4G8RD5288SBV,SR4G7UD5288MDV,SR2G7SO5285SB,SR4G8RD5285HAV,SR4G6SO5288SB,SR6G7UD5385MB,SR2G6SO5285SB,SR2G7SO5288SB,SR4G7UD5288HAV,SR4G6SO5285SB,SRI4G7UD5285SB,SR4G7SO5288HA,SRI2G7SO5288HA,SR4G8RD5288MDV,SRI6G7UD5385HM,SR4G7UD5288SBV,SR2G6SO5288SB,ENTERPRISE NETWORKING,数据中心处理,HIGH PERFORMANCE COMPUTING,CLOUD COMPUTING,STORAGE,高性能计算,存储器,企业网络,DATA CENTER PROCESSING,云计算
用于AI和ML的智能ZDIMM
本文介绍了SMART公司推出的ZDIMMs(Zefr Memory Modules)在人工智能(AI)和机器学习(ML)应用中的优势。ZDIMMs经过严格测试,可消除超过90%的内存可靠性故障,确保最大化的应用运行时间和优化内存子系统可靠性。文章还列举了ZDIMMs在自然语言处理、图像识别、DNA测序等领域的应用实例,并提供了DDR4和DDR5两种规格的ZDIMM订购信息。
SMART - ZDIMMS,DDR5 REGISTERED ZDIMM,DDR4 REGISTERED ZDIMM,DDR5寄存式ZDIMM,ZDIMM,DDR4注册ZDIMM,SRZHG8RD5648-SP,SRZ4G8RD5448-SP,SRZ2047RD410825-SE,SRZ8G8RD5448-SP,SRZ4G8RD5288-SP,SRZ4097RD420825-SC,SRZAG8RD5846-SB,SRZ8197RD440425-SC,SRZ4097RD440425-SC,HIGH RESOLUTION MEDICAL IMAGE PROCESSING,IMAGE RECOGNITION,LLMS,3D RENDERING,LLMS,REAL TIME HIGH-SPEED ANALYTICS,AI,DNA测序,DNA SEQUENCING,安全摄像机数据处理,ALGORITHMIC TRADING,实时高速分析,毫升,SECURITY CAMERA DATA PROCESSING,3D渲染,人工智能,高分辨率医学图像处理,NATURAL LANGUAGE PROCESSING,自然语言处理,图像识别,算法交易,ML
DDR5 Value RDIMMs Provides Twice the Performance Compared to DDR4
DDR5 Value RDIMMs are designed to meet increasing needs for efficient performance in a wide range of applications including cloud computing and data center processing. The DDR5 specification provides developers with twice the performance (4.8 to 6.4 Gbps data rate) and improved power efficiency in comparison to DDR4 by using an on-DIMM 12V voltage regulator (PMIC) and 1.1 I/O Voltage.
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