Alliance Memory Introduced High-Speed CMOS DDR SDRAMs With 64, 128, 256, and 512Mb Densities and Temperature Range From -40℃ to +85℃

时间： 2023-09-02 来源：ALLIANCE News

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SAN CARLOS, Calif. — Feb. 25, 2014 — ALLIANCE Memory introduced a line of high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 64 Mb (AS4C4M16D1-5TIN), 128 Mb (AS4C8M16D1-5TIN), 256 Mb (AS4C16M16D1-5TIN), and 512 Mb (AS4C32M16D1-5TIN) with an industrial temperature range of -40℃ to +85℃.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR SDRAMs operate from a single +2.5-V (± 0.2V) power supply and are lead (Pb)- and halogen-free.

The AS4C4M16D1-5TIN, AS4C8M16D1-5TIN, AS4C16M16D1-5TIN, and AS4C32M16D1-5TIN feature a fast clock rate of 200 MHz and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The 128M, 256Mb, and 512Mb devices are also available in a TFBGA package. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples and production quantities of the DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.

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本文由涂抹转载自ALLIANCE News，原文标题为:Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 64 Mb, 128 Mb, 256 Mb, and 512 Mb Densities and Temperature Range From -40 °C to +85 °C，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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