Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications
Announced at 2022 Symposium on VLSI: Achieving 5.9 ns Random Read Access and 5.8 MB/s Write Throughput on Test Chip
TOKYO, Japan ― RENESAS Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an Embedded STT-MRAM Test Chip with fast read and write operations fabricated using a 22-nm process. It includes a 32Mbit embedded MRAM memory cell array and achieves 5.9ns random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8MB/s.
Renesas presented these achievements on June 16 at the 2022 IEEE Symposium on VLSI Technology and Circuits, held between June 12 and 17 in Hawaii.
As the advances of IoT and AI technologies continue, microcontroller units (MCUs) used in endpoint devices are expected to deliver higher performance than ever, and therefore need to be fabricated with finer process nodes. MRAM fabricated in BEOL (Note 1) is advantageous compared to flash memory fabricated in FEOL (Note 2) for sub-22 nm processes because it is compatible with existing CMOS logic process technology and requires fewer additional mask layers. However, MRAM has a smaller read margin than flash memory, which degrades read speed. A large gap between the CPU operating frequency and the read frequency of the non-volatile memory is also a challenge since it can degrade MCU performance.
MRAM can also achieve a shorter write time than flash memory because it requires no erase operation before the write operation. However, further speed improvements are needed to shorten system downtime for over-the-air (OTA) updates required for endpoint devices and reduce costs for end-product manufacturers in writing control codes for MCUs.
To address these challenges and respond to market demand for higher MCU performance, Renesas has developed the following new circuit technologies to achieve faster read and write operation in MRAM.
1. Fast Read Technology Employing High-Precision Sense Amplifier Circuit
MRAM uses memory cells including magnetic tunnel junction (MTJ) devices in which high and low-resistance states correspond to data values of 1 and 0 respectively to store information. A differential sense amplifier distinguishes between the two states by reading the voltage difference in discharge speed between the memory cell current and reference current. However, since the memory cell current difference between the 1 and 0 states is smaller for MRAM than for flash memory, the voltage difference read by the sense amplifier is smaller. Even if the discharge time is extended to wider voltage differences between the differential input nodes of the sense amplifier, both of the input nodes are susceptible to being completely discharged before securing a necessary voltage difference. This problem is particularly acute at high temperatures.
To resolve this issue, Renesas introduced a new technology utilizing capacitive coupling to boost the voltage level of the differential input nodes, allowing the differential amplifier to sense a voltage difference even when the memory cell current difference is small, achieving high-precision and fast read operation.
2. Fast Write Technology with Simultaneous Write Bit Number Optimization and Shortened Mode Transition Time
Following the high-speed write technologies for embedded STT-MRAM announced in December 2021, the new technology achieves even higher speed by shortening the mode transition time during a write operation.
This technology divides up the areas to which write voltage is applied and, by inputting the write address before the write voltage setup, it selectively applies voltage only to the necessary area. This method reduces the parasitic capacitive load on the area where the voltage is applied during the write operation, reducing the voltage setup time. As a result, the mode transition time to write operation is reduced by approximately 30%, speeding up write operation.
Renesas continues to develop technologies aimed at the application of embedded MRAM technology in MCU products. These new technologies have the potential to dramatically boost memory access speed, which is currently a challenge with MRAM, to exceed 100 MHz, enabling higher-performance MCUs with embedded MRAM. Faster write speed will contribute to more efficient code writing to endpoint devices. Renesas is committed to further increasing capacity, speed, and power efficiency for MCUs to accommodate a range of new applications.
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本文由翊翊所思转载自Renesas，原文标题为:Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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描述- 这份资料详细列出了Renesas Flash Programmer V3.08.00版本支持的微控制器（MCU）列表。资料中包含了不同型号的RL78和RX系列MCU，并标注了它们在USB、E1/E20、E2 Lite和E2接口上的支持情况。资料还提供了每个MCU的序列号和额外信息。
型号- RX71M,R5F11LLG,R5F11LLF,R5F11LLE,R5F1008A,R5F1008D,R5F1008E,R5F1008C,R5F10EBE,R5F10EBD,R5F10EBC,R5F10EBA,R5F104AE,R5F104AF,R7FS5D37A,R5F104AC,R5F104AD,R5F104AA,R5F104AG,R7FA6M2AF,R7FS7G27G,R7FS7G27H,R5F104BF,R5F104BG,R5F104BD,R7F701Z12,R5F104BE,RAJ240100,R5F104BC,R7F701Z11,R5F104BA,RX72X,RX72M,RX72N,R5F104CG,R5F104CE,R5F104CF,R5F104CC,RX71X,R5F104CD,R5F104CA,RX72T,R5F117GA,R7FS5D57C,RH850/P1M,R5F117GC,R5F102A7,R5F102A8,R5F104EA,R5F102A9,RL78/G10,R5F104EG,RL78/G11,R5F104EH,R7FS5D57A,RL78/G12,R5F104EE,RL78/G13,R5F104EF,R5F102AA,RL78/G14,R5F104EC,R5F104ED,R5F10EGC,R5F10EGA,R7FA4W1AD,RL78/G1A,RL78/G1C,RL78/G1D,R5F10EGE,RL78/G1E,R5F10EGD,RL78/G1F,RL78/G1G,R5F104FC,RL78/G1H,R5F104FA,RL78/G1M,R5F104FJ,RL78/G1N,R5F104FH,RL78/G1P,R5F104FF,R5F104FG,R5F104FD,R5F104FE,R5F10RB8,R5F563TBA,R5F563TBB,R5F563TBD,R5F104GC,R5F10RBA,R5F563TBE,R5F104GD,R5F104GA,R5F104GK,R5F104GL,R5F104GJ,R5F104GG,R5F104GH,R5F104GE,R5F10RBC,R5F104GF,R5F10AAA,R5F524TA,R5F524TB,R5F524TC,R5F563TCA,R5F10AAE,R5F563TCB,R5F10AAD,R5F524TE,R5F10AAC,R5F563TCD,R5F563TCE,R7F701412,R7F701652,R7F701410,R7F701653,R7F701411,R7F701650,R7F701651,R7F701649,R7F701407,R7F701408,R7F701647,R7F701405,R7F701648,R7F701406,R7F701645,R7F701403,R7F701646,R7F701404,R5F10ABA,R5F10Y17,R5F10Y16,R5F10Y14,R7FS1JA78,R5F524UB,R5F524UC,S128,R5F524UE,R5F10ABE,R5F10ABD,S124,R5F10ABC,R5F100AA,R7F701423,R5F513T5,R7F701421,R7F701422,R5F513T3,R5F100AG,R5F100AE,R5F100AF,R7F701417,R5F100AC,R5F100AD,R5F10CGD,R5F10CGC,R5F10CGB,R5F563TEA,R5F563TEB,R5F563TED,R5F11BBE,RL78/I1A,R5F563TEE,RL78/I1B,R5F11BBC,RL78/I1C,RX100,R5F104JF,RL78/I1D,R5F100BC,R5F104JG,RL78/I1E,R5F104JD,R5F100BA,R5F104JE,R5F104JC,R5F100BF,R5F104JJ,R5F10PAE,R5F100BG,R5F10PAD,R5F100BD,R5F104JH,R7F701623,R5F100BE,R5F11BCC,R5F52305,R5F52306,R5F10ELE,R5F10ELD,R5F10ELC,R5F10RF8,R5F11BCE,R5F100CC,R7F701401,R5F100CD,R7F701644,R7F701402,R5F100CA,R5F10RFC,R5F10RFA,R5F10Y44,R5F100CG,R5F10PBE,R5F100CE,R5F10PBD,R5F100CF,R5F524T8,R5F10Y47,R5F10Y46,R5F52318A,R5F11FLL,R5F11FLK,R5F11FLJ,R5F10RG8,R5F104LH,R7F701610,R7F701611,R5F104LF,R5F104LG,R5F10RGC,R5F104LD,R5F104LE,R5F10RGA,R5F104LC,R5F52318B,R5F113GL,RH850/P1L-C,R5F113GK,R5F104LL,R7F701603,R5F104LJ,R5F104LK,R7F701602,R5F10968,R5F1096E,R5F1096D,R5F1096C,R5F1096B,R5F1096A,R5F100EE,R7F701621,R5F564MG,R5F100EF,R5F104MJ,R7F701622,R5F100EC,R5F104MG,R5F100ED,R5F104MH,R7F701620,R5F564MF,R5F100EA,R5F104MF,R5F564ML,R5F564MJ,R5F100EG,R5F104MK,R7F701612,R5F100EH,R5F104ML,R7F701613,R5F10AGG,R5F10AGF,R5F10AGE,R5F10AGD,R5F10AGC,R5F10AGA,R5F100FF,R7FA2A1AB,R5F100FG,R5F100FD,R5F566ND,R5F100FE,R5F52316C,R5F100FC,R5F52316A,R5F100FA,R5F566NN,R5F100FL,R5F100FJ,R5F100FK,R5F100FH,R5F10RJ8,R5F11BGE,R5F11BGC,R5F10CLD,R5F10RJA,C30,R5F100GG,R5F100GH,R5F100GE,R7F702Z02C,R5F100GF,R5F100GC,R5F100GD,R5F100GA,R5F10RJC,R5F52317B,R5F52317A,R5F100GK,R5F100GL,R5F100GJ,R5F10CME,R5F10CMD,R7F701371,R7F701372,R5F5651C,R5F566TE,RH850/F1H,R5F1051A,R5F11Z7A,RH850/F1K,RH850/F1L,R5F5651E,R5F10PGH,R5F104PL,R7F701379,R5F10PGG,R5F10PGF,R5F104PJ,R7F701377,R5F10PGE,R5F104PK,R7F701378,R5F10PGD,R5F104PH,R7F701375,R5F52205B,R7F701376,R5F104PF,R7F701373,R5F104PG,R7F701374,S5D9,S5D5,R5F10PGJ,S5D3,RH850/F1M,R5F10RLC,R7F701382,R7F701383,R5F10RLA,R7F701380,R7F701381,R5F1076C,R5F113LK,R7F702Z04C,S7G2,R7F701388,R5F10TPJ,R5F52315C,R7F701389,R5F52206B,R7F701386,R5F52315A,R7F701384,RA,R7F701385,RE,R5F562N7,R5F113LL,R5F562N8,R5F100JC,RX,R5F113ML,R5F100JJ,R5F113MK,R5F100JK,R5F100JH,R7F701597,R7FS12878,R5F52203B,R5F100JF,R5F100JG,R5F100JD,R5F100JE,R5F10ALD,R5F10ALC,R5F100JL,R5F10ALG,R5F10ALF,R5F10ALE,R7F702002A,R5F1054A,R5F10AME,S3A7,R5F11BLC,S3A6,S3A3,R5F56517,R5F56514,S3A1,R5F56519,R5F566TA,R5F10AMG,R5F10AMF,R5F11BLE,R5F100LD,R5F5631D,R5F100LE,R5F5631E,R5F5631B,R5F100LC,R5F5631F,R5F5631G,R5F100LL,R7F701577,R5F52201B,R5F5631M,R5F100LJ,R5F5631J,R5F100LK,R5F5631K,R5F100LH,R7F701573,R5F5631P,R5F100LF,R5F5631N,R5F100LG,R7F701572,RX23E-A,R5F5631Y,R7F701568,R7F701569,R5F5631W,R5F1056A,R7FA6T1AD,R7FA6T1AB,R5F10PLE,R5F113PG,R7F701580,R5F100MF,RX113,R7F701581,RX110,RX111,R7F701589,R5F100MK,R7F701586,R5F10PLJ,R5F113PL,R5F100ML,R7F701587,R5F113PK,R5F10PLH,R5F113PJ,R5F100MJ,R5F10PLG,R5F100MG,R7F701582,R5F10PLF,R5F113PH,R5F100MH,R7F701583,R5F1057A,RL78,R5F10PMF,RX13T,R5F111MF,R5F10PME,R5F111ME,R7F701313,R7F701314,R7F701553,R7F701311,R7F701312,R5F10PMJ,R5F111MJ,R7F701552,R7F701310,R5F10PMH,R5F111MH,R5F10PMG,R5F111MG,R7F701548,R5F56307,R7F701549,R5F56308,R7F701546,R7F701304,R7F701547,R7F701305,R5F1058A,R7F701Z05A,R5F111NG,R5F111NF,R5F5630D,R5F111NE,R5F5630A,R5F5630B,RX130,R5F5630E,R7F701566,R7F701567,R7F701564,R7F701322,R7F701565,R7F701323,R7F701562,R7F701320,R5F111NJ,R7F701563,R7F701321,R5F10JBC,R7F701560,R5F111NH,R7F701561,R5F109AA,R7F701319,R5F56318,R7F701318,R7F701557,R5F56316,R7F701315,R5F56317,R5F109AE,R5F109AD,R5F5631A,R5F109AC,R5F109AB,R7F701Z06A,R5F100PH,R5F100PF,R5F100PG,RA6M1,RA6M3,R5F100PL,RA6M2,R5F100PJ,RA6M4,R5F100PK,R5F109BB,R7F701Z07A,R5F109BA,R5F10369,R5F10367,R5F10368,R5F10366,R5F1036A,R5F109BE,R5F109BD,R5F109BC,R5F113TK,R5F10NLG,R5F10PPH,R5F113TJ,R5F
Power Your Edge AI Application with the Industry’s Most Powerful Arm MCUs
As is evident, RA8 MCUs with Helium can significantly improve neural network performance without the need for any additional hardware acceleration, thus providing a low-cost, low-power option for the implementation of simpler AI and machine learning use cases.
Renesas MCUs Can Rewrite The Update Software by Wireless Communication with OTA Technology
The control software of the MCU is also rewritten in various situations in the customer‘s ECU. It may be necessary for users to rewrite not only at the time of shipment from the factory, but also after shipping to improve the control software of the vehicle you use. This is inconvenient because users must bring the vehicle to the factory or dealer. Renesas Electronics MCUs are addressing that issue with the Over the Air (OTA) technology, which can rewrite the update software by wireless communication.
RX72M集团瑞萨MCU
型号- R5F572MDDGFP,R5F572MDHGFP,R5F572MDDDBG,R5F572MDDGBD,R5F572MDDDFP,R5F572MDHGBG,R5F572MDHDFP,R5F572MDDGBG,R5F572MDHDBG,R5F572MDDGFB,R5F572MDHGBD,R5F572MDDDFC,R5F572MDDDFB,R5F572MDDDBD,R5F572MDHGFC,RX700,R5F572MDHDBD,R5F572MDDGFC,RX72M,R5F572MDHDFC,R5F572MNHGFC,R5F572MDHDFB,RX700 SERIES,R5F572MNDDFB,R5F572MDHGFB,R5F572MNDDFC,R5F572MNHGFB,R5F572MNHDBG,R5F572MNDGFB,R5F572MNHGBD,R5F572MNHDBD,R5F572MNDGFC,RX72M GROUP,R5F572MNHDFB,R5F572MNHDFC,R5F572MNDDFP,R5F572MNDGFP,R5F572MNDDBD,R5F572MNHGBG,R5F572MNDDBG,R5F572MNDGBD,R5F572MNHGFP,R5F572MNHDFP,R5F572MNDGBG
RL78系列低功耗MCU
型号- RL78/G1A,RL78/G1C,RL78/I1A,RL78/G1D,RL78/I1B,RL78/I1C,RL78/H1D,RL78/L1A,RL78/G1F,RL78/I1D,RL78/G1G,RL78/I1E,RL78/L1C,RL78/G1H,RL78/G1M,RL78/G1N,RL78/G1P,RL78/GXX,RL78/G22,RL78/G23,RL78/G13A,R78/G22,RL78/G10,RL78/G11,RL78/G12,RL78/G13,RL78/G14,RL78/G15,RL78/G16,RL78/L12,RL78/L13,RL78
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可贴片PCB尺寸50*50mm-580*610mm；PCB厚度0.3-8mm；贴装精度CHIP元件+0.03,BGA Pitch 大于0.25mm；元件尺寸0201-74*74BGA；元件高度：30mm。
最小起订量： 1 提交需求>
可定制LAMP LED、 CHIP LED、 PLCC LED、 汽车用车规级LED、COB LED的尺寸/电压/电流等参数，电压1.5-37V，电流5-150mA，波长470-940nm。
最小起订量： 30000 提交需求>
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