【产品】静态电流低至350μA的SL1007G高性能开关电源次级侧同步整流电路,集成MOSFET RDSON低至8mΩ
SL1007G是一款高性能开关电源次级侧同步整流电路,集成了控制芯片、储能电容和低RDSON的功率MOSFET。采用自供电技术,通过电流检测自动开/关MOS。在开关电源系统中可直接替换肖特基二极管使用,是一种应用简单且性能优异的次级整流器的解决方案。
SL1007G可应用于满足CoC Tier 2六级能效的5V~12V输出的开关电源系统,最高工作频率可达150kHz,支持QR/DCM模式。利用功率MOSFET极低的导通损耗来减小肖特基二极管的导通功率损耗,提高开关电源转换效率的同时降低整流器的温升,以满足高效率开关电源应用。
芯片内置高压自供电单元电路,配合高度集成的芯片方案,使得芯片外围电路极其简单无需外部任何器件,能直接在系统中替换肖特基二极管进行使用。
特点
直接替代肖特基二极管,无外部器件
自供电,无需外部供电
静态工作电流低至350μA
最高工作频率高达150kHz
支持QRM/DCM模式
支持High Side/Low Side整流
集成MOSFET RDSON低至8mΩ
比肖特基整流效率提高3%~5%
应用范围
QC5V~12V快速充电器
USB-PD适配器
其他反激式开关电源
器件特征
功能框图
绝对最大额定值
推荐工作条件
电特性
功能描述
SL1007G同步整流电路主要分为控制IC、储能电容和功率MOSFET。控制IC在合适的反向工作电压范围内通过电源产生电路对储能电容充电,电容储存的电量作为控制IC电源。当控制IC通过比较器检测到A-K电压大于Von_ak时,控制IC驱动功率MOSFET导通,导通后A-K压差降低,当检测到A-K压差接近0mV时,控制芯片关闭功率MOSFET,典型工作波形如图3所示
电源产生电路
在同步整流二极管工作在A-K反向压降时,通过电源产生电路对储能电容充电,电荷存储在电容中,产生电压VCC,工作A-K压降正向时VCC为控制IC其他单元电路供电。A-K压降反向时,VCC电压低于8.5V,由K向VCC充电,高于10V时禁止充电,故VCC一直稳定在8.5V~10V之间。为保证电源产生电路可靠工作,A-K反向压降应大于15V。
控制逻辑
当检测到A-K正向压降大于Von_ak时,控制功率MOS导通,最小导通时间1us。导通后A-K之间压差降低,当检测到A-K压差达到Voff-ak时,控制功率MOSFET关闭。
电压采集电路
通过独有的电压采样方式将A-K压降精确无误的采集到比较器的比较端,以供比较器产生准确控制逻辑,以达到精准控制功率MOSFET的目的。
最小开启时间
当检测到功率MOSFET开通时,最小开通时间1μs,以提高电路的抗干扰能力,保证MOSFET不会出现误关断现象。
典型测试曲线
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本文由zc转载自SLKOR,原文标题为:SL1007G同步整流电路产品手册,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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产品型号
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品类
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Polarity
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Iᴄ(A)
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Vᴄʙᴏ(V)
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Vᴄᴇᴏ(V)
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Vᴇʙᴏ(V)
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Vᴄᴇ(sat)(V)
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Package
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S8050
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三极管
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NPN
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0.5
|
40
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25
|
5
|
0.6
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SOT-23/TO-92
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选型表 - SLKOR 立即选型
电子商城
服务
满足150W内适配器、PD快充、氮化镓快充等主流产品测试需要;并可查看被测开关电源支持协议,诱导多种充电协议输出,结合电子负载和示波器进行高精度测试。测试浪涌电流最大40A。支持到场/视频直播测试,资深专家全程指导。
实验室地址: 深圳 提交需求>
支持 3Hz ~ 26.5GHz射频信号中心频率测试;9kHz ~ 3GHz频率范围内Wi-SUN、lora、zigbee、ble和Sub-G 灵敏度测量与测试,天线阻抗测量与匹配电路调试服务。支持到场/视频直播测试,资深专家全程指导。
实验室地址: 深圳/苏州 提交需求>
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