The Smallest 100V, 2 mΩ GaN FET EPC2071 in the World is Now Shipping from EPC
Efficient Power Conversion Corporation(EPC), the world's leader in eGaN® power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7mΩ typical, 100V) GaN FET.
The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48V~54V input DC-DC for new servers and artificial intelligence. Lower gate charges, QGD, and zero reverse recovery losses enable high-frequency operations of 1 MHz and beyond and high efficiency in a tiny 10.2mm2 footprint for state-of-the-art power density.
The EPC2071 is ideal for BLDC motor drives, including e-bikes, e-scooter, robots, drones, and power tools. The EPC2071 is 1/3rd the size of a silicon MOSFET with the same RDS(on), QG is 1/4th that of the MOSFET, and the dead time can be reduced from 500ns to 20ns to optimize motor plus inverter efficiency and reduce acoustic noise.
The EPC2071 is footprint compatible with EPC's prior Generation 4 family of products: EPC2021, EPC2022, and EPC2206. The Generation 5 improvement in Area x RDS(on) gives the EPC2071 the same on-resistance as the prior generation with a 26% smaller size.
"The EPC2071 makes the ideal switch for the primary side of the LLC DC-DC converter from 40V~60V to 12V~5V. This 100-volt device offers improved performance and cost compared with previous-generation 100V GaN FETs allowing designers to economically improve efficiency and power density", according to Alex Lidow, EPC's co-founder and CEO. "These parts are also suitable for telecom and server power supplies, and solar applications. Additionally, EPC2071 is less expensive than comparable silicon devices and in stock!"
Reference Design
The EPC9174 reference design board is a 1.2kW, 48V input to 12V output LLC converter. It features the EPC2071 for the primary side full bridge. The EPC9174 enables a 1MHz switching frequency and 1.2kW of power in a small 22.9mm x 58.4mm x 10mm size (power density 1472 W/in3). The peak efficiency is 97.3% at 550W and the full load efficiency of 96.3% at 12V, delivering 100A output.
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本文由董慧转载自EPC,原文标题为:The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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品类:High voltage CMOS-based protection ICs
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现货: 10,500
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