Enhancing PoE devices with Schottky Bridge Rectifiers: Central Semiconductor’s CBRDFSH Series is up to the challenge

时间： 2023-08-22 来源：Central Semiconductor

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What is Power over Ethernet (PoE)?

PoE has become one of the most convenient and efficient technology developments in modern networking. First conceived in the late 1990s and later standardized in 2003 via IEEE 802.3af, PoE technology allows for both power and data to be transmitted across a single ethernet cable from a PoE ethernet switch. This allows for device operation and data communication without requiring a power supply and ethernet switch. PoE systems are made up of two primary device types: power sourcing equipment (PSE), such as PoE switches or PoE injectors, and powered devices (PD), such as cameras or smart lighting hubs. The original IEEE standard dictated a 15.4W power sourcing rating from PSE to PD, and has since been amended multiple times. The most recent amendment to the PoE IEEE standard was in September 2018 via IEEE 802.3bt type 4, which dictates a 100W power sourcing rating.

Every PoE PD requires an efficient bridge rectifier input stage for voltage polarity correction as the maximum voltage differential seen on a typical ethernet line can be +/- 48V, which is equivalent to 96V max. With this application specifically in mind, Central Semiconductor has developed and released its CBRDFSH Schottky bridge rectifier series, ideal for PD input voltage polarity correction.

The CBRDFSH series of devices has a lower maximum voltage drop than standard full-wave bridge rectifiers, which translates to a low forward conduction loss. This is an essential aspect for PoE systems as the total number of viable PDs is proportionate to the collective input efficiency of the PDs; higher input efficiency translates to more viable PDs on any one network. These Schottky Bridge Rectifiers are available with a reverse voltage capability of 100V, which is ideal for the potential voltage differential seen on network CAT transmission lines. Additionally, these devices feature Central’s new, low profile BR DFN package, ideal for space-constrained PDs.

CBRDFSH Series in your designs

Since the output voltage polarity of a full-wave bridge rectifier is independent of the input voltage polarity, they are often used in PD input stages. This ensures that the PD is biased properly when crossover cables are used. Central offers two different forward rectified current ratings: 1 and 2 amperes, with a reverse voltage rating of 100 volts. With this voltage rating, these Schottky bridge rectifiers are compatible with all 48V PSE supplies, as they provide correction coverage for the full voltage swing. In addition, these devices accommodate the power sourcing amendments made to IEEE 802.3 via IEEE 802.3at, IEEE 802.3bt type 3, and IEEE 802.3bt type 4.

Depending on the type of PSE used in the PoE system, power is either sourced on the main pins or spare pins of the RJ45 connector. With an End-Span system, power and data are both sourced on the main pins: 1, 2, 3 and 6. This configuration is commonly used when a new PoE system is being constructed. With a Mid-Span system, data is sourced on the main pins, but power is sourced on the spare pins: 4, 5, 7, and 8. This configuration is commonly used when a PoE system is already in place and port expansion is the primary goal. However, for this reason, polarity correction is required on both PD pin set inputs. This requirement became mandatory for PDs as of amendment IEEE 802.3at, which states that two bridge rectifiers must be used in the input stage of a PD, one delegated to each input pin set.

In all PoE systems, power available at the PD is always lower than what the PSE can source. Additionally, more power is lost to heat while the PoE system operates. This makes the use of power efficient technology in PoE applications extremely crucial. Perhaps the greatest advantage in using Central’s CBRDFSH devices is the low forward voltage drop that contributes to a much lower power loss in the PoE system. A low forward voltage drop is also ideal for the power classification phase of PoE systems. Two voltage pulses are provided by the PSE to the PD and travel across an impedance inside the PD controller. The PSE then records the current across the PD controller, utilizes it to calculate the impedance, which in turn is used to determine a power class. Large current usage via the Schottky bridge rectifiers will cause an accuracy issue during power classification.

Transient Voltage Suppressor (TVS) diode utilization for circuit protection is also an important consideration. Voltage should be selected based on the voltage rating of the system. At least a 400W rating is required for indoor applications, with higher power ratings required for outdoor systems. Central’s P4SMA, P6SMB, and 1.5SMC series TVS diodes are ideal for this requirement. For example, a 48V indoor PoE camera system requires at least a 400W 58V TVS diode; Central Semiconductor’s 400W, 58V P4SMA58A in the SMA package is an ideal selection.

BR DFN Package Benefits

Another significant advantage of Central’s CBRDFSH series is the low profile package design. Similar bridge rectifier designs are only available in the HD DIP, with a typical profile of 2.7mm, whereas the BR DFN package has a typical profile of 1.2mm, 54% thinner than the HD DIP. This is a major positive for space savings in the z-direction, allowing for the creation of lowprofile PDs, particularly beneficial for sensors and cameras. Additionally, the flat, no lead package allows for increased power and heat dissipation in the PD. This is made possible by the large contact area between the BR DFN and the printed circuit board (PCB), thus creating enhanced levels of thermal efficiency.

Conclusion

Central’s CBRDFSH series devices are perfect for polarity correction in any PoE powered device, at any power classification level. They provide an exceptional all-in-one solution for decreasing power loss and package height, and yielding an increase in electrical and mechanical efficiency. Whether for a new application or to improve the efficiency in a current design, Central’s CBRDFSH Schottky bridge rectifier series has design engineers covered.

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本文由尼嘀的猫耳朵转载自Central Semiconductor，原文标题为:Article: Enhancing PoE Devices with Schottky Bridge Rectifiers，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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CENTRAL SEMICONDUCTOR - SCHOTTKY DIODES,ESD TRANSIENT VOLTAGE SUPPRESSORS,稳压二极管,ULTRAFAST RECTIFIERS,SMALL SIGNAL DIODES,CURRENT LIMITING DIODES,肖特基整流器,BRIDGE RECTIFERS (FULL WAVE),肖特基二极管,MOSFETS,双向瞬态电压抑制器,POWER SUPPLY,桥式整流器（全波）,限流二极管,小信号二极管,BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS,ESD瞬态电压抑制器,MOSFETS器件,电源,ZENER DIODES,SCHOTTKY RECTIFIERS,控制电路,CONTROL CIRCUIT,超快整流器,CMPDM302PH,CMUT3904,CMR3U-96M,CMUT3906,CBR2-D040S,CBR2-D060S,CMR2U-06,CMLSH05-4,CMOD2005,CMJH100,CMSH3-60M,CMLDM7005,P6SMB200CA,3SMC170CA,CMOZ3V3 THRUCMOZ15V,CMHZ5226B THRU CMHZ5245B,CMKSH-3T,CBR4M-L040,1SMC170CA,1.5SMC200CA,CMPDM203NH,CBR1-D040S,CMSH5-60,CBR1-D060S,CMXD2004,1SMB170CA,CMJH150,SMART METER,ELECTRONIC ENERGY METER,电子式电能表,智能电表

2017/10/06 - 应用笔记或设计指南代理服务技术支持采购服务

音频扬声器应用简介

本文介绍了PoE音频扬声器系统，强调其灵活性和可放置性。文章重点介绍了Central Semiconductor提供的能效半导体产品，包括瞬态电压抑制器、齐纳二极管、ESD瞬态电压抑制器、小信号晶体管、MOSFETs、肖特基二极管和稳压二极管等，旨在降低功耗和减小封装尺寸。文中还提供了相关产品的详细规格和应用信息，并提供了样品订购和进一步联系的方式。

CENTRAL SEMICONDUCTOR - SMALL SIGNAL TRANSISTORS,ESD TRANSIENT VOLTAGE SUPPRESSORS,SCHOTTKY DIODES,稳压二极管,AUDIO AMP,肖特基二极管,MOSFETS,POE控制器,POE CONTROLLER,肖特基全波桥式整流器,小信号晶体管,ESD瞬态电压抑制器,MOSFETS器件,TRANSIENT VOLTAGE SUPPRESSORS (TVS),ZENER DIODES,SCHOTTKY BRIDGE RECTIFIERS FULL WAVE,音频放大器,瞬态电压抑制器（TVS）,CSMF03V3C,CBRHDSH1-200,CBRHDSH1-100,CMLT3820,CMLDM8002A,CBRLDSH2-100,CEDM7002AE,1SMB58CA,CFTVS5V0BULC,CMLT3474,CMLDM7002A,C4SMAFL58A,CMOZ5L1,CBRSDSH2-100,CMO5V0LC,CBRHDSH2-100,CMDZ5L1,CTLTVS5V0B,CEDM8004,CMOZ12L,POE音频扬声器,POE AUDIO SPEAKERS

2017/08/09 - 应用笔记或设计指南代理服务技术支持采购服务

CBRDFSH2-40 CBRDFSH2-60 CBRDFSH2-100表面贴装2.0安培硅肖特基桥式整流器

资料介绍了CENTRAL SEMICONDUCTOR公司生产的CBRDFSH2系列硅肖特基桥式整流器，包括CBRDFSH2-40、CBRDFSH2-60和CBRDFSH2-100三种型号。这些整流器采用2.0安培的额定电流，封装在耐用的环氧树脂表面贴装封装中，具有玻璃钝化芯片。资料提供了产品的最大额定值、电气特性、机械尺寸和典型电气特性曲线。

CENTRAL SEMICONDUCTOR - 肖特基桥式整流器,SCHOTTKY BRIDGE RECTIFIERS,全波桥式整流器,表面贴装2.0安培硅肖特基桥整流器,SURFACE MOUNT 2.0 AMP SILICON SCHOTTKY BRIDGE RECTIFIERS,FULL WAVE BRIDGE RECTIFIERS,CBRDFSH2-60,CBRDFSH2-40,CBRDFSH2-100,CBRDFSH2

9-May 2024 - 数据手册 - R6 代理服务技术支持采购服务

Central Semiconductor（中央半导体）电子式电能表（智能电表）替代能源应用介绍

本资料介绍了智能电表（电子能源计量器）的拓扑结构和相关元器件。内容涵盖电压/电流感应和测量、显示驱动、控制电路、电源、I/O接口等方面，详细列出了Central Semiconductor公司生产的各种离散半导体器件，包括桥式整流器、稳压二极管、双向瞬态电压抑制器、小信号二极管、MOSFET、限流二极管等，旨在为智能电表的设计和制造提供技术支持。

CENTRAL SEMICONDUCTOR - SMALL SIGNAL TRANSISTORS,BRIDGE RECTIFERS,SCHOTTKY DIODES,稳压二极管,ULTRAFAST RECTIFIERS,SMALL SIGNAL DIODES,CURRENT LIMITING DIODES,肖特基二极管,桥式整流器,MOSFETS,双向瞬态电压抑制器,限流二极管,小信号二极管,BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS,小信号晶体管,MOSFETS器件,ZENER DIODES,超快整流器,CURRENT SENSE AND MEASURE,I/O INTERFACE,电力,输入/输出接口,SMART METER,电压检测和测量,POWER SUPPLY,可再生能源,DISPLAY DRIVE,电源,控制电路,CONTROL CIRCUIT,ELECTRONIC ENERGY METER,显示用驱动器,电子式电能表,VOLTAGE SENSE AND MEASURE,智能电表,电流检测与测量

2016年07月19日 - 商品及供应商介绍代理服务技术支持采购服务

PCN#249产品/工艺变更通知

CENTRAL SEMICONDUCTOR - 肖特基桥式整流器,SCHOTTKY BRIDGE RECTIFIER,CBRDFSH2-60

March 11, 2024 - 产品变更通知及停产信息代理服务技术支持采购服务

CBRDFSH1-40 CBRDFSH1-60 CBRDFSH1-100表面贴装1.0安培硅肖特基桥式整流器

CENTRAL SEMICONDUCTOR公司推出的CBRDFSH1系列硅肖特基桥式整流器，包括CBRDFSH1-40、CBRDFSH1-60和CBRDFSH1-100三种型号，具有1.0安培的额定正向电流，采用玻璃钝化芯片，封装在耐用的环氧表面贴装封装中。

CENTRAL SEMICONDUCTOR - 肖特基桥式整流器,SCHOTTKY BRIDGE RECTIFIERS,SURFACE MOUNT 1.0 AMP SILICON SCHOTTKY BRIDGE RECTIFIERS,表面贴装1.0安培硅肖特基桥整流器,全波桥式整流器,FULL WAVE BRIDGE RECTIFIERS,CBRDFSH1,CBRDFSH1-60,CBRDFSH1-40,CBRDFSH1-100

9-May 2024 - 数据手册 - R7 代理服务技术支持采购服务

CEN1151A肖特基桥式整流器产品/工艺更改通知（242）

PCN #242通知于2022年10月4日发布，涉及CEN1151A肖特基桥式整流器产品。变更包括新增组装地点、内部晶圆尺寸优化和内部引线框架修改。此变更旨在缓解供应链风险，确保产品供应不间断。产品规格、质量和可靠性不受影响。变更不影响设备的尺寸、形状或功能。包含详细的测试数据和质量保证信息。

CENTRAL SEMICONDUCTOR - 肖特基桥式整流器,SCHOTTKY BRIDGE RECTIFIERS,CEN1151A

October 4, 2022 - 产品变更通知及停产信息 - R0 代理服务技术支持采购服务

利用肖特基桥式整流器增强Poe器件：Central Semiconductor的CBRDFSH系列能够应对挑战

本文介绍了PoE（以太网供电）技术及其在现代网络中的应用。重点介绍了Central Semiconductor的CBRDFSH系列肖特基桥式整流器，该系列产品适用于PoE设备中的电压极性校正。文章详细说明了PoE技术的工作原理、PoE系统的组成以及CBRDFSH系列产品的特点，如低电压降、高反向电压能力、低剖面设计等，强调了其在提高PoE系统效率和节省空间方面的优势。

CENTRAL SEMICONDUCTOR - FULL-WAVE BRIDGE RECTIFIER,肖特基桥式整流器,高效桥式整流器,EFFICIENT BRIDGE RECTIFIER,全波桥式整流器,SCHOTTKY BRIDGE RECTIFIER,CBRDFSH SERIES,CBRDFSH,CAMERAS,智能照明中心,SMART LIGHTING HUBS,摄像机

2020/8/13 - 应用笔记或设计指南代理服务技术支持采购服务

CBRDFSH2-40 SPICE模型

CENTRAL SEMICONDUCTOR - CBRDFSH2-40

2024/03/26 - 设计模型代理服务技术支持采购服务

中央半导体的新肖特基桥整流器在低姿态BR DFN封装新闻稿

Central Semiconductor推出新型肖特基桥式整流器CBRDFSH系列，采用低剖面BR DFN封装，提供1.0A-2.0A、40V-100V选项。该系列器件具有高能效，利用玻璃钝化芯片降低漏电，提高性能和可靠性。正向电压低至500mV，适用于PoE、智能照明和电源适配器等空间节省型应用。

CENTRAL SEMICONDUCTOR - 新型肖特基整流桥,NEW SCHOTTKY BRIDGE RECTIFIERS,CBRDFSH2-60,CBRDFSH2-40,CBRDFSH1-60,CBRDFSH1-40,CBRDFSH2-100,CBRDFSH,CBRDFSH1-100,INTELLIGENT LIGHTING,以太网供电（POE）,POWER OVER ETHERNET (POE),电源适配器,智能照明,POWER ADAPTERS

September 24, 2019 - 商品及供应商介绍代理服务技术支持采购服务