【产品】高温1200V/20A碳化硅模块CHT-PLUTO-C1220,支持高频开关和减少冷却
CHT-PLUTO-C1220是一个高温1200V/20A碳化硅模块,在一个单独密封封装内包括一个MOSFET开关和一个肖特基二极管。该产品适用于实现异步降压转换器或升压转换器的功能,保证在-55℃至+210℃(Tj)的全范围内正常运行。每个MOSFET或二极管的击穿电压超过1200V,并能够切换电流高达20A。MOSFET在VGS=20V时,导通电阻阻值在25℃时为90mΩ;在210℃时为200mΩ。每个MOSFET都有一个本征体二极管。
产品优势:
高功率密度转换器(支持高频开关和减少冷却)
寿命长,可靠性高
恶劣环境和高温功率转换器
采用HADES®栅极驱动解决方案的无缝驱动
产品应用:
直流电机驱动和执行器控制
DC-DC转换器
特性(MOSFET)
规定范围-55°C ~ +210°C (Tj)
VDS最大值:1200V
最大连续电流:
20A @ Tc≤160°C
17A @ Tc=175°C
最大脉冲电流:25A
典型MOSFET导通电阻:
o RDSon= 40 mΩ @ Tj=25°C
o RDSon= 120 mΩ @ Tj=210°C
高速开关
电压控制:VGS=-5V/20V
低栅极电荷:QGS: 22nC
特性(二极管)
典型正向电压@20A : 1.5V
最大连续电流:20A
最大正向重复峰值浪涌电流: 35A
带隔离外壳的密封包装
原理框图
注:图示显示了MOSFET的本征体二极管
结构图
MOSFET
绝对最大额定参数:
栅源电压VGS:-5V~22V
漏源电压VDS:1200V
最大直流漏极电流IDS:20A
最高结温Tjmax:210℃
Tc=175°C 时功率损耗:45W
ESD等级
人体模式 >1kV
操作条件
栅源电压VGS:-5V~20V
漏源电压VDS:1200V
最大直流漏极电流IDS (Tc=175°C):17A
最大直流漏极电流IDS (Tc≤160°C):20A
最大脉冲漏极电流25A
结温 -55℃~+210℃
二极管
绝对最大额定参数:
直流阻断电压:1200V
连续正向电流:20A
最高结温Tjmax:210℃
Tc=175°C 时功率损耗:45W
ESD等级
人体模式 >2kV
操作条件
直流阻断电压:1200V
连续正向电流:20A
正向重复峰值浪涌电流:35A
结温 -55℃~+210℃
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本文由咪猫翻译自CISSOID,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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1-32RD,DCG20B650LB,IXTA4N150HV,IXFK140N25T,IXTP76N25T,DSP8-12AS,IXFN44N80P,IXFN80N60P3,IXTA44P15T,DHG40B1200LB,IXFY36N20X3,IXYA12N250CHV,IXFH15N100Q3,IXFQ28N60P3,IXFH44N50Q3,IXTX170P10P,IXTA2R4N120P,IXTA1R6N100D2,IXA30IF1200HR,IXCK36N250,IXTP70N075T2,DPG30IM400PC,IXTQ60N20T,IXTX5N250,IXBH10N300,DHG30I600PA,FMM75-01F,IXTA08N100P,IXTP34N65X2,IXFN82N60Q3,MMIX1F44N100Q3,DSTF4045C,IXFH88N30P,DSTF30120CR,DMA120B800LB,IXXK200N65B4,DSTF40100C,IXFN80N50P,DST5100S-A,IXTQ36P15P,IXTP8N70X2,IXTT30N50L2,DLA20IM800PC,IXYT25N250CHV,DMA...P...,DSS10-01A,IXTH3N200P3HV,IXFP10N60P,IXTY4N70X2,DSA30C45PC,IXTT120N15P,IXBOD 2-26RD,IXTQ88N30P,DSA30C45PB,DNA120E2200KO,IXFT40N85XHV,IXFP72N30X3M,DSA60C45HB,DSSK70-0015B,IXTA120P065T,DSEC60-06B,IXTH16N50D2,DSEC60-06A,IXXH50N60C3,IXFK78N50P3,MMIX1T132N50P3,IXFH102N15T,MBRB1060CT,IXXK160N65B4,IXFZ520N075T2,IXTN120P20T,IXFB300N10P,IXTR90P10P,IXBK64N250,IXTK90N25L2,IXTP1N100P,DSS10-006A,MIXA40WB1200TED,DSA15IM45IB,IXYH50N120C3,CLA100E1200HB,IXTP170N13X4,IXTU8N70X2,IXXK160N65C4,IXFH15N100P,IXFP44N25X3,IXXH75N60B3,IXTT16N20D2,IXYF30N400V1,IXFK420N10T,DSTF60100C,DSEI2X61-12P,MMIX1T600N04T2,DSEI2X61-12B,DSA120X200LB,DSSK70-008A,IXBF32N300,CPC3902,CLA100E1200KB,IXTY2N100P,DSSK80-0045B,DSA80C45HB,IXTT30N60P,IXTQ82N25P,DSEP6-06AS,DHG60I1200HA,IXFK80N50P,IXFN38N100P,DMA10P1200UZ,IXXH75N60C3,IXTA24N65X2,CPC3909,DS...I...NA,X016C,IXFK360N15T2,IXTH58N25L2,IXFQ10N80P,DMA30IM1600PZ,IXYX40N250CHV,MIXA150W1200TEH,IXYF16N250CV,IXTH1N200P3,IXTT90P10P,IXTP170N075T2,IXFH26N50P3,IXXH30N60B3D1,IXYN100N120B3H1,IXXH50N60B3,DPG30I300PA,IXFR48N60P,MKE 38RK600DFELB,IXFP20N50P3,MIXA...O...,CLA40MT1200NPZ,DPF60C200HB,IXBOD2-30R,IXYX120N120C3,DPG15I200PA,DSEP6-06BS,IXTH120N20X4,IXA12IF1200PB,IXTH02N250,IXFT120N25T,IXFK24N80P,DSS25-0025B,IXGP20N120A3,IXFK150N15P,DSTF30120C,ITF40PF1200DHGTLB,LSIC1MO120T0080,IXFX44N80Q3,IXFP26N30X3,DHG100X650NA,CLA100E1200TZ,IXFQ80N25X3,IXFN320N17T2,IXA40IF1200HR,IXYH55N120A4,IXTN30N100L,IXFT150N20T,IXTH62N65X2,IXTB30N100L,DSEP 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40kW充电模块选用森国科KS02120-I碳化硅二极管,有效提升充电速度
KS02120-I碳化硅二极管能够提供高效、高耐压、高频率和高可靠性的解决方案。这款二极管具有1200V的高耐压和20A的电流容量,十分适用于高功率充电模块的需求。KS02120-I碳化硅二极管在40kW充电模块中的应用,可以显著提高充电速度,减少能量损耗,提升系统可靠性,并有助于缩小充电设备的体积。
应用方案 发布时间 : 2024-09-27
【产品】用于驱动62mm 1200V/300A SiC MOSFET模块的栅极驱动板,专业恶劣电压环境设计
CISSOID推出的CMT-TIT8243是一款栅极驱动板,针对额定温度为125°C (Ta) 的62毫米碳化硅 (SiC) MOSFET 功率模块进行了优化。该板基于CISSOID HADES 栅极驱动器芯片组,可为汽车和工业应用中的高密度电源转换器设计提供热余量。
产品 发布时间 : 2021-09-14
多方协同破卷出新 助力国产碳化硅行业高质量发展
多方协同破卷出新 助力国产碳化硅行业高质量发展“半导体产业的迅猛发展,正引领着全球科技革命和产业变革的新浪潮,碳化硅在全球新能源产业发展中扮演着至关重要的角色,是我国在全球半导体产业竞争格局中实现重要突破的关键。
行业资讯 发布时间 : 2024-07-13
瞻芯电子1200V/650V SiC塑封半桥模块获车规认证,SMPD封装更轻薄、更可靠
瞻芯电子基于第二代碳化硅(SiC)MOSFET芯片技术,开发的首批2款SMPD塑封半桥模块产品(IVSM12080HA2Z,IVSM06025HA2Z)通过了车规级可靠性认证(AQG324)。
原厂动态 发布时间 : 2024-01-30
SMC碳化硅MOSFET器件S2M0025120K入选everything PE年度MOSFET榜单!
S2M0025120K是SMC研发和制造的碳化硅功率MOSFET器件,漏源击穿电压超过1200V,栅极阈值电压为2.1V,漏源导通电阻为25毫欧,连续漏极电流高达63A,功率耗散小于446W。是新能源汽车快充模块、车载充电器、太阳能逆变器、在线UPS/工业UPS、开关模式电源(SMPS)、DC-DC转换器和储能系统(ESS)等应用的理想选择。
原厂动态 发布时间 : 2024-01-29
Silicon Carbide Intelligent Control Module
型号- CXT-PLA3S SERIES,CXT-ICM3SA12340AAS,CXT-ICM3SA12450AAS,CXT-PLA3S,CXT-ICM3SB12340AAS,CXT-ICM3SA12550AAS
The Leader in High Temperature Semiconductor Solutions CHT-EUROPA-A1220 HighTemperature1200V/20ADual SiC Schottky DiodeModule
型号- CHT-EUROPA-A1230,CHT-EUROPA-A1220,CHT-PLA3143A,CHT-PLA1971A-HM8A-T,CHT-PLA3143A-HM8A-T
The Leader in High Temperature Semiconductor Solutions High Temperature1200V/20ADual SiC MOSFET Module
型号- CHT-PLA8294A-HM8A-T,CHT-PLA3777A-HM8A-T,CHT-PLA8294A,CHT-PLAXXXXX,CHT-PLA2316A-HM8A-T,CHT-PLA2228A-HM8A-T,CHT-PLUTO-B1220,CHT-PLUTO-C1230,CHT-PLUTO-B1230,CHT-PLUTO-C1220
CISSOID推出高压SiC栅极驱动板,提供高dI/dt、高dV/dt鲁棒性 ,有效保护电源模块
CISSOID提供额定温度为 125°C (Ta) 的高压 SiC 栅极驱动板,针对 62mm 和 XM3 SiC MOSFET 功率模块进行了优化,CMT-TIT8243 用于62mm/1200V 碳化硅功率模块;CMT-TIT8244 用于62mm/1700V 碳化硅功率模块,CMT-TIT0697 用于XM3/1200V 碳化硅功率模块。
原厂动态 发布时间 : 2021-08-12
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可加工PCB板层数:1~30层,板材类型:单双面板/多层板/HDI盲埋孔板/高频高速板/微波射频天线板/高精度阻抗板/厚铜板/微波FR4/耐腐蚀光模块PCB等,成品尺寸:5*5cm~58*70cm; 板厚0.2~6mm。
最小起订量: 1 提交需求>
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