MDT Released 200nA Nano-Ampere TMR Switch Sensors with Fast Response Time
MDT Extends the Leading Position in Supplying Ultra-Low Power and High-Performance Magnetic Sensor Solutions for Battery-Powered Sensor Applications with the New Nano-Ampere TMR Switch Sensor Series.
ROSEMONT, Illinois and ZHANGJIAGANG, China, Oct. 16, 2018-- MultiDimension Technology (MDT) released three new Nano-Ampere Tunneling Magnetoresistance (TMR) switch sensors TMR1362/TMR1262/TMR1362 featuring 200nA ultra-low power consumption. Compared to other low-power magnetic sensors on the market, they offer the lowest power consumption with a fast response time under 50Hz power cycling, a wider range of supply voltages from 1.8 to 5.5V, and outstanding temperature stability from -40 to 125 degrees Celsius. They were ideally suited for a variety of battery-powered sensor applications, including smart flow meters, proximity switches, liquid level sensors, access switches, electrical toys, and many industrial, consumer, and medical applications.
"MDT's new Nano-Ampere TMR Switch Sensors extend our existing product line with even lower power consumption in high-speed operation. Compare to competing low-power magnetic sensors that must power cycle the device at very a low frequency of 2 to 10Hz, resulting in a very slow response time and high risk of misdetection in fast-switching signals, our new Nano-Ampere TMR switch sensors employ 50Hz power cycling that will ensure the sensor's performance coverage for fast response and high-speed applications, while they achieve 200nA, the lowest power consumption among all such products on the market. This is only made possible by MDT's unique TMR technology with a strong IP portfolio on TMR sensor design, fabrication, and applications." said Dr. Song Xue, president and CEO of MultiDimension Technology. "For applications that require higher performance, MDT's existing 1.5microAmpere TMR switch sensors have been recognized by the industry as the leading solution for applications that require ultra-low power and high speed in continuous operation. They can be paired with MDT's new Nano-Ampere TMR switch sensors, offering our customers comprehensive options for their new-generation sensor solutions, as well as upgrades for Reed Switches or Hall-Effect/AMR/GMR/TMR sensors in present designs with higher reliability, faster response, and lower power."
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产品型号
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品类
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兼容型号
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类型
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供电电压（V）
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功耗（nA、μA、mA）
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工作模式
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敏感方向
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B_op(Gs,25°C)(Gs)
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B_rp(Gs,25°C)(Gs)
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输出接口
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封装形式
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TMR1102
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TMR磁开关传感器芯片
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—
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单极
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1.8～5.5 V
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1.5μA
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连续供电
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X轴
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17
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13
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CMOS
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SOT23-3
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选型表 - 多维科技 立即选型
TMR136x 系列纳安级、高频响、全极型磁开关芯片
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TMR136X纳安快速响应全极磁开关传感器
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产品型号
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品类
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类型
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供电电压(V)
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功耗(mA, μA, nA)
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工作模式
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敏感方向
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Bᴏᴘ (Gs,25℃ )
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Bʀᴘ (Gs,25℃ )
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输出接口
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封装&尺寸(mm)
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TMR1102
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微安级高频响TMR磁开关传感器芯片
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单极
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1.8V~5.5V
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1.5μA
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连续供电
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X轴
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17Gs
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13Gs
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CMOS
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SOT23-3
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TMR1362 200nA超低功耗全极磁开关传感器
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TMR136x 系列 纳安级、高频响、全极型磁开关芯片 产品规格书
多维科技 - 全极型磁开关芯片,磁开关芯片,TMR1366S,TMR1366T,TMR136X,TMR1362S,TMR1366G,TMR1362T,TMR136X 系列,TMR1362G,TMR1362,唤醒磁开关,水表,气表,热量表,接近开关
MDT宣布推出三轴高性能TMR线性磁场传感器
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多维科技 - 线性磁场传感器,TMR LINEAR MAGNETIC FIELD SENSORS,TMR2301,TMR23XX,TMR2305,TMR2303,TMR2309,TMR2307
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可定制位移传感器量程范围10~600mm，该YWD型位移传感器表面有带刻度的透明窗☐，每毫米的变化量误差不超过3ue/mm，可在静态、准静态和低频动态下工作。主要指标：非线性<0.2%；供桥电压<10v；测试精度：0.01mm。
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授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
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