MDT Released 200nA Nano-Ampere TMR Switch Sensors with Fast Response Time
MDT Extends the Leading Position in Supplying Ultra-Low Power and High-Performance Magnetic Sensor Solutions for Battery-Powered Sensor Applications with the New Nano-Ampere TMR Switch Sensor Series.
ROSEMONT, Illinois and ZHANGJIAGANG, China, Oct. 16, 2018-- MultiDimension Technology (MDT) released three new Nano-Ampere Tunneling Magnetoresistance (TMR) switch sensors TMR1362/TMR1262/TMR1362 featuring 200nA ultra-low power consumption. Compared to other low-power magnetic sensors on the market, they offer the lowest power consumption with a fast response time under 50Hz power cycling, a wider range of supply voltages from 1.8 to 5.5V, and outstanding temperature stability from -40 to 125 degrees Celsius. They were ideally suited for a variety of battery-powered sensor applications, including smart flow meters, proximity switches, liquid level sensors, access switches, electrical toys, and many industrial, consumer, and medical applications.
"MDT's new Nano-Ampere TMR Switch Sensors extend our existing product line with even lower power consumption in high-speed operation. Compare to competing low-power magnetic sensors that must power cycle the device at very a low frequency of 2 to 10Hz, resulting in a very slow response time and high risk of misdetection in fast-switching signals, our new Nano-Ampere TMR switch sensors employ 50Hz power cycling that will ensure the sensor's performance coverage for fast response and high-speed applications, while they achieve 200nA, the lowest power consumption among all such products on the market. This is only made possible by MDT's unique TMR technology with a strong IP portfolio on TMR sensor design, fabrication, and applications." said Dr. Song Xue, president and CEO of MultiDimension Technology. "For applications that require higher performance, MDT's existing 1.5microAmpere TMR switch sensors have been recognized by the industry as the leading solution for applications that require ultra-low power and high speed in continuous operation. They can be paired with MDT's new Nano-Ampere TMR switch sensors, offering our customers comprehensive options for their new-generation sensor solutions, as well as upgrades for Reed Switches or Hall-Effect/AMR/GMR/TMR sensors in present designs with higher reliability, faster response, and lower power."
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多维科技(MDT)磁传感器芯片和模组选型指南
描述- 江苏多维科技有限公司(MDT)创立于2010年,公司总部座落于江苏省张家港保税区,是一家专注于磁性传感器的制造商。多维科技拥有400余项专利,200多款磁传感器产品和先进的磁( TMR/GMR/AMR)传感器量产晶圆产线,可批量生产、供应各类高性能磁传感器,以满足客户多元化的应用需求。
型号- AMR3108G,GE-T,TMR2705,TMR1202HT,TMR2703,TMR7401-600MA,USB2510-CAL01-800,TMR6406L,USB21023,USB25103,TMR1102,TMR1302H,TMR1343,TMR1342,AMR3108AP,TMR1341,TMR1348,TMR3002,TMR7204,TMR3004,AMR4020,TMR1345,TMR3005,AGVTMR45XS,TMR7504-B,USB2510A,TMR6406X,TMR3001,TMR1340,TMR13DX,TMR7553-B,AGVTMR25XC,LPS-TMR125B4,GE-A,TMR2602,TMR3105AP,AMR3013P,TMR6401,AMR4010,AGVTMR25X4,TMR6218LA,TMR9112,TMR2305M,TMR2605,TMR6206D,TMR2604,LPS-TMR125A4,TMR1366,TMR6206L,TMR7903,TMR2613,TMR4M06,TMR7502,AGVTMR46XS,TMR4M07,TMR4M08,TMR4M02,TMR4M03,TMR4M04,TMR4M05,TMR1362,TMR9002,TMR6217LA2,TMR9001,AMR2501,USB27053,TMR7554-B,TMR7401-1000MA,TMR2103,TMR4007,USB2705A,TMR2102,TMR6306,AGVTMR15XN,TMR2503,TMR4003,TMR2623,TMR4004,AGVTMR15XP,TMR2105,TMR2501,TMR4005,TMR2104,TMR4006,AMR3003L,TMR4001,TMR4002,TMR1252,FSD-TMR1005,TMR7502-C,TMR2109,TMR2505,TMR2901,TMR2108,TMR2905,FSD-TMR1006,TMR4018,TMR6318,TMR2111,AGVTMR45LC,TMR1304,TMR4014,TMR1303,TMR4015,AMR4100,TMR1148,TMR1302,TMR4016,TMR4017,TMR1302HT,TMR4011,TMR4012,TMR7401,TMR4013,TMR2110,TMR1383,TMR1262,TMR3105G,TMR6212LA,TMR7555-B,TMR7303-D,TMR7551-B,TMR7401-300MA,AMR1507,TMR-MAC005,TMR1308,TMR6401C,TMR1305,TMR6218XA,TMR1309,TMR1157,TMR2003,AMR3001,TMR1155,TMR2001,TMR6209,TMR1202H,TMR62082,TMR2005,AMR3005,AMR3008,TMR7503-B,TMR2009,TMR2922,AMR4050,TMR2653,AGVTMR46LC,TMR7204-C,TMR1287,TMR7303,TMR1202,TMR7302,AMR2302,TMR6404X,TMR1283,TMR1162,TMR7556-B,TMR3102P,TMR7302-D,TMR6403A,TMR6318C,TMR7552-C,TMR1208,TMR1206,USB2510T,AGVTMR360C,TMR1212,AMR1320,TMR2701,TMR6501,TMR1215,TMR1341XD,TMR1213,TMR7551
多维科技传感器芯片选型表
多维科技传感器芯片选型表提供TMR磁开关传感器芯片,TMR角度传感器芯片,TMR线性磁场传感器芯片,TMR齿轮传感器芯片,AMR磁开关传感器芯片,AMR角度传感器芯片,AMR线性磁场传感器芯片,AMR磁栅传感器芯片,薄膜型温度传感器芯片选型,基于单极、双极锁存、全极等类型,0~40V供电电压等、多种输出接口和敏感方向等。
产品型号
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品类
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兼容型号
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类型
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供电电压(V)
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功耗(nA、μA、mA)
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工作模式
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敏感方向
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B_op(Gs,25°C)(Gs)
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B_rp(Gs,25°C)(Gs)
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输出接口
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封装形式
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TMR1102
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TMR磁开关传感器芯片
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—
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单极
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1.8~5.5 V
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1.5μA
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连续供电
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X轴
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17
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13
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CMOS
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SOT23-3
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选型表 - 多维科技 立即选型
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产品型号
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品类
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类型
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供电电压(V)
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功耗(mA, μA, nA)
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工作模式
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敏感方向
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Bᴏᴘ (Gs,25℃ )
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Bʀᴘ (Gs,25℃ )
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输出接口
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封装&尺寸(mm)
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TMR1102
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微安级高频响TMR磁开关传感器芯片
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单极
|
1.8V~5.5V
|
1.5μA
|
连续供电
|
X轴
|
17Gs
|
13Gs
|
CMOS
|
SOT23-3
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选型表 - 多维科技 立即选型
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型号- TMR1366,TMR1366S,TMR1366T,TMR136X,TMR1362S,TMR1366G,TMR1362T,TMR136X SERIES,TMR1362G,TMR1362
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可定制均温板VC最薄0.4mm,有效导热系数超5,000 W / m·K(纯铜(401 W/m·K ,石墨烯1,200 W/m·K)。工作温度范围同时满足低于-250℃和高于2000℃的应用,定制最低要求,项目年采购额大于10万人民币,或采购台套数大于2000套。
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可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。
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