【产品】业界首款900V N沟道增强型SiC MOSFET C3M0065090J,助力电源管理解决方案
全球SiC领先者CREE推出了业界首款900V MOSFET:C3M0065090J。凭借其最新突破的SiC MOSFET C3MTM场效应晶体管技术,该N沟道增强型功率器件还对高频电力电子应用进行了优化。超越同样成本的Si 基方案,能够实现下一代更小尺寸、更高效率的电力转换系统,并大幅降低了系统成本。C3M0065090J突破了电力设备技术,是开关电源(SMPS)、电池充电器、太阳能逆变器,以及其他工业高电压应用等的电源管理解决方案。
该900V SiC具有更宽的终端系统功率范围,能满足不断演变的新型应用市场中的设计挑战,更高直流母线电压也同样适用。在25°C条件下,C3M0065090J拥有目前市面上最低的65mΩ的额定导通电阻;当温度高至150°C时,也可保证导通电阻只有90mΩ,这能有效降低功率损耗,并缩减热管理系统的尺寸。从而进一步减少电源设计者们的创新限制,有助于实现尺寸更小、速度更快、温度更低、效率更高的电源方案。
图: CREE业界首款900V MOSFET C3M0065090J
由于非常高的开关损耗和较差的内部体二极管,现有900V Si基MOSFET在高频率开关电路中有较多的局限性。Si基MOSFET的另一局限在于导通电阻Rds(on),提高了超过3倍的温度,这将导致散热问题和显著降额。与之不同的是,科锐新型900V MOSFET技术,可以在更高温度时仍能提供低导通电阻Rds(on),这将显著减小热管理系统的尺寸。
科锐C3M0065090J额定900V/32A,在25°C条件下导通电阻Rds(ON)为65mΩ。在更高温度(Tj=150°C)工作时,导通电阻Rds(ON)也只有90mΩ。
C3M0065090J的特点与优势:
• 采用SiC MOSFET C3MTM场效应晶体管技术,N沟道增强型
• 高阻断电压,较低的导通电阻65mΩ(25°C),90mΩ(150°C)
• 较低的高速开关功放
• 新的低阻抗包和驱动源
• 具用快速内在二极管,反向恢复电流较低(Qrr)
• 工作温度:-55 °C 至 +150 °C
• 封装:标准TO247-3/TO220-3,及低阻抗 D2Pak-7L表面贴封装
• 无卤,通过无铅认证
C3M0065090J的应用:
• 可再生能源
• 电动汽车电池充电器
• 高压直流/直流转换器
• 开关模式电源
• 太阳能逆变器
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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
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