氮化镓功率器件研发与制造先进企业——致能(ZIENER)
产品亮点:
第一代650V氮化镓器件:专门针对氮化镓自主开发DHTOL,ALT,PLBI等设备保障器件一致性及长期可靠性。量产GaN器件动态开关特性已达到行业头部水平且单独针对HEMT进行长期可靠性验证,已通过HTGB以及HTRB 100%BV(AEC-Q101要求)等长期可靠性。
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虹美功率半导体(Hongmei Power Semiconductor)MOSFET/GaN(氮化镓)FET选型表(国内独创特色产品)
目录- 小功率低压P/N沟道场效应管 中功率低压P/N沟道场效应管 超级沟槽工艺中功率P/N沟道场效应管 大功率高压N沟道场效应管 高压超结N沟道场效应管 大功率中压大电流P/N沟道场效应管 大功率中压大电流N+P沟道场效应管 大功率中压大电流串联半桥驱动双N沟道场效应管 超级沟槽工艺中压大电流N/P沟道场效应管 GaN(氮化镓) FET管
型号- HM01N100PR,HM3400KR,HM35SDN03D,HM603K,HMS10DN08Q,HM1N70PR,HM10DN06Q,HMS11N70Q,BSS84DM,HM3N40R,HM2818D,HM13N30,HMS20N65D8,HM1N50MR,BSS84DW,HM08DN10D,HM2810D,HM10N06Q,HM4615Q,HMS20N15KA,HMN9N65Q,HM100P35E,HM4P10D,HM6604D,BSS84KR,HM30SDN02D,HM2819D,HM2N50PR,HM06DP10Q,HM3N25R,HMS100N15,HMS3N70R,HM3400DR,HM35DN03D,HM4616Q,HM2310DR,HM4N60R,HM3N40PR,BSS138KR,BSS123DM,HM605K,HMS45N04Q,HM3N100F,HM18DP03Q,BSS138SR,HM3N30R,HM6604DB,HM3N100D,HM8N100A,HM07DP10D,HM2301BWKR,HM3400E,HM3DN10D,HM3N150,HM18DP03D,HMS65N10KA,HM8N100F,HMS5N70R,HM18SDN04D,HM50P35DE,HM2800D,HM10DP06D,HM2N50R,HM20DN04Q,HM10P10Q,HM4N10D,BSS138DM,HM15P06Q,BSS8402DM,HM1N60R,HMS18N10Q,HMS85P06,HM2809D,HM13N25FA,HM3401E,HM6604BWKR,HM12P04Q,HM30DN02D,HMS45P06D,HM4618Q,HMS35N06Q,HM15N25,HM50P03D,HM06N15MR,HM2N25MR,HM607K,HMS6N10PR,HM6803D,HM15N25K,HM2DP10D,HM3N150F,HM3N150A,HM12N20D,HM2309DR,HM4611Q,HM4N65R,HM13N25A,HM25P15,HMS5N80R,BSS138DW,HM4485E,HMS10N15D,HMS85P06K,HMS4488,HM3N30PR,HM10SDN06D,HM2319D,HM1N60PR,HM610K,HM3N100,HMS5N65R,HM100P35KE,HM25P15K,HM10SDN10D,HM1N70R,HM25P15D,HM20P04Q,HMS4N10MR,HM2803D,HM2N65R,HM4640D,HMS10DN10Q,HM609K,HM13N30K,HMS3N65R,HM25N08D,HM13N30F,HM2318D,HM3N120F,HM12DP04D,HM3N120A,HM3N50R,HMS5N90R,HM2N70R,BSS84SR,HM3800D,HM13N25KA,HM2302BWKR,HMS13N65Q,HM6804D,HM7002KDM,HMS11N65Q,HM3N50PR,HM2N65PR,HM7002KDW,HM5N50R,HM02P30R,HM0565MR,HM25N06Q,HM4884Q,HMS50N03Q,HM3801D,HM3N120,HM3401DR,HM4630D,HM02P30PR
面向同步整流应用的氮化镓场效应晶体管(eGaN®FET)及集成电路应用简介
描述- 本文介绍了适用于同步整流的氮化镓场效应晶体管(eGaN®FET)及其集成电路的应用范围,包括100W至6kW DC/DC同步整流、服务器、网络通信及电信系统的AC/DC整流、LED和OLED电视的适配器和开关模式电源等。文章强调了采用氮化镓器件的优势,如尺寸小巧、高开关频率、无反向恢复、理想并联特性、优异散热性能和低EMI。同时,提供了eGaN®SR系列产品的参数对比,并展示了不同型号的半桥开发板和应用案例。此外,还提到了针对48V数据中心的高效GaN 1kW DC/DC转换器的设计资源和支持材料。
型号- EPC2212,EPC2057,EPC2214,EPC2059,EPC9003C,EPC2215,EPC2218,EPC2016C,EPC2019,EPC2052,EPC2051,EPC2053,EPC9046,EPC9047,EPC90155,EPC2029,EPC9010C,EPC2021,EPC2020,EPC9014,EPC2022,EPC9097,EPC9098,EPC9099,ЕPC2218,EPC9092,EPC9093,EPC9050,ЕPC2215,EPC9091,EPC9006C,EPC2036,EPC2010C,EPC9001C,EPC2034C,EPC2032,EPC2031,EPC2033,EPC9061,ΕPC2059,EPC9062,EPC2203,EPC9048C,EPC2202,EPC2204,EPC2015C,EPC2207,EPC2206,EPC2007C,EPC9034,EPC9078,EPC9035,EPC2045,EPC90122,EPC90123,EPC9033,EPC90124
【IC】AC-DC功率开关芯片DK8715AD可使设备效率达到95.4%,单芯片集成AHB控制+半桥驱动+半桥GAN器件
东科半导体DK8715AD是一颗基于不对称半桥架构,集成了两颗氮化镓功率器件的AC-DC功率开关芯片,其能够在较大的负载范围内实现原边功率管ZVS,副边整流管ZCS,从而提高电源系统效率。
增强型氮化镓技术
描述- 本文介绍了eGaN®技术,这是一种基于氮化镓(GaN)的功率转换技术。与传统硅基功率器件相比,eGaN®器件具有更快的开关速度、更小的尺寸、更高的效率和更低的成本。文章详细阐述了eGaN®技术的优势,包括降低导通电阻、提高开关速度、减少电容和降低驱动电路所需的功率。此外,还介绍了eGaN®器件在汽车、医疗、LED照明、无线充电和太阳能等领域的应用。
型号- EPC2212,N/A,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2050,EPC9126,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC2065,EPC90151,EPC90152,EPC2100,EPC2067,EPC21701,EPC2221,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC9507,EPC2031,EPC2152,EPC9063,EPC9126HC,EPC2204A,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2204,EPC2207,EPC2206,EPC2044,EPC2012C,EPC9049,EPC2252,EPC9166,EPC9167,EPC9041,EPC9162,EPC9165,EPC7020,EPC9160,EPC9040,EPC2302,EPC2001C,EPC2304,EPC2306,EPC2305,EPC8002,EPC9177,EPC9167HC,EPC9179,EPC9173,EPC9174,EPC9055,EPC9050,EPC9171,EPC9172,EPC7007,EPC2034C,EPC7002,EPC9148,EPC23101,EPC2071,EPC7001,EPC23102,EPC23103,EPC9144,EPC23104,EPC90140,EPC2111,EPC7004,EPC7003,EPC90132,EPC9022,EPC90137,EPC90138,EPC90135,EPC7019,EPC7018,EPC9038,EPC9039,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC21601,EPC2088,EPC7014,EPC90122,EPC90123,EPC90120,EPC9153,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
CE65H270DNDI氮化镓650V氮化镓高电子迁移率晶体管规格书
描述- CE65H270DNDI系列650V GaN HEMT是Corenergy公司生产的氮化镓场效应晶体管,具有低导通和开关损耗,适用于适配器、可再生能源、电信和数据通信、伺服电机、工业和汽车等领域。
型号- CE65H270DNDI,CE65H270DNDI SERIES
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