X-Band High Power Amplifier with 8.5-11.5GHz Frequency Range and 25W Output Power | UMS
UMS published a very versatile new GaN HPA. The CHA8212-99F is a 8.5-11.5GHz 25W output power X-Band High Power Amplifier. It features a 44dBm Pout with a high PAE of 36% at Psat (@Pin=20dBm). This circuit is supplied in bare die.
The CHA8212-99F is dedicated to defence applications and a wide range of microwave applications and systems. This circuit is manufactured on a UMS proprietary 0.25µm gate length GaN pHEMT process.
Main features:
· Frequency range: 8.5-11.5GHz
· Linear Gain: 34dB over 3 stage
· Pout: 44dBm Pout @ 20dBm Pin
· PAE: 36% PAE @ 20dBm Pin
· DC bias: 28V @ 0.84A
· Bare die product
Output Power versus Input Power:
Output Return Loss versus Frequency:
Input Return Loss versus Frequency:
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本文由宝丁转载自UMS，原文标题为:CHA8212-99F, a very versatile new GaN HPA，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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UMS提供以下品类和技术指标的放大器产品，频率最高可达105GHz，带宽超过20GHz，Gain(dB)：10-38.5，Bias(mA)：30-2300，Bias(V）：2.5-30.
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产品型号
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品类
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RF Bandwidth (GHz)min
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RF Bandwidth (GHz)max
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Gain(dB)
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IP3(dBm)
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P-1dB OUT(dBm)
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Sat. Output Power(dBm)
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PAE(%)
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Bias(mA)
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Bias(V)
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Case
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CHA1008-99F
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低噪声放大器
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80
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105
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17
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DC
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5
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DC
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DC
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115
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2.5
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Die
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