SiC can Be Extremely Fast

时间： 2021-10-15 来源：fastSiC

技术问答

选型帮助

研发客服

商务客服

People would think of GaN (gallium nitride) when talking about high frequency or very high frequency switching.However, a study published by scientists from Stanford University showed that SiC can also be extremely fast.

The scientists demonstrated that DC-RF efficiency higher than 86% can be realized with a 17MHz class E inverter using SiC MOSFET. There is one characteristic that commercial SiC MOSFETs are superior to GaN HEMTs: the output capacitance (Coss) related loss (Ediss) of SiC MOSFET is independent of switching frequency. In the meantime, the Ediss of GaN HEMTs tends to increase with increasing frequency (due to increased dV/dt) which deteriorates GaN’s performance at very high frequency.

Of course, SiC MOSFET does not come with no shortcomings for high frequency or very high frequency switching operations. SiC MOSFET is a vertical device while GaN HEMT is a lateral device, therefore the input capacitance (Ciss) of SiC MOSFET is inherently higher than that of GaN HEMT. Also, the Rds(on)*Co(eq.) figure-of-merit for today’s commercial SiC MOSFETs is still larger than that of GaN HEMT. However, should the performance of SiC MOSFET be continuously improved, it will not be surprising to see more multi-MHz converters implemented by SiC MOSFETs.

Active Power Device Selection in High- and Very-High-Frequency Power Converters

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由Avatar转载自fastSiC，原文标题为:SiC can be extremely fast，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

Achieve Zero Switching Loss with SiC MOSFET

A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies.The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology of China.

设计经验发布时间 : 2021-10-16

浅析昕感科技在沟槽SiC MOSFET方向的研究专利

为开发高质量的沟槽SiC MOSFET产品，昕感科技很早便开始先进沟槽型技术的布局，已形成沟槽型SiC MOSFET方案。目前已公开的先进沟槽型SiC MOSFET结构设计相关专利达到10项，其中9项已实现授权，专利文件中也都包含完整的电学仿真结果证明新结构的性能优越性，并附上完整的制造流程指导方案的实现。授权专利中的结构可以分为四大类，本文将给大家分别介绍其中的关键技术。

设计经验发布时间 : 2024-07-09

SiC MOSFET桥式结构的栅极驱动电路

LS（低侧）侧SiC MOSFET在Turn-on和Turn-off时的VDS和ID变化方式不同。在讨论SiC MOSFET的这种变化对Gate-Source电压（VGS）的影响时，需要考虑包括SiC MOSFET的栅极驱动电路在内的等效电路。

设计经验发布时间 : 2024-07-19

即思创意（fastSiC）碳化硅MOSFET和肖特基二极管选型指南

目录- SiC Schottky Diode&SiC MOSFET

型号- FL12190A,FF06100G,FC06008D,FF06100F,FC06006A,FC06008C,FC06008B,FF06100D,FC06008A,FF06320B,FF06320A,FF06030Q,FF17900E,FH06010C,FH06020E-3,FL06320B,FH06020E-2,FL06320A,FC06006D,FC06016C,FC06006C,FF17900Q,FC06010C,FH06004C,FH06006C,FC06002X,FL06150A,FL06320G,FF061K4A,FF12040Q

选型指南 - 即思创意 - 2022/1/18 PDF 英文下载

【产品】雪崩耐受性强的碳化硅MOSFET FF06030系列，具有更高的系统效率，允许使用高温应用

即思创意推出的碳化硅MOSFET–Falcon Series FF06030具有快速切换行为的优化RDS(on)，能够与标准栅极驱动器兼容，雪崩耐受性强。其具有更高的系统效率，允许使用高温应用并进行高频操作，可靠性高，符合RoHS标准且无卤素。

产品发布时间 : 2022-08-30

碳化硅MOS进入消费电源市场，即思创意发布65W SiC快充方案

即思创意(Fast SiC Semiconductor Inc., FSS) 发布了一系列典型耐压 750V的 SiC MOSFET，将有望首次把以往只用于新能源车、航天和高阶工控等的碳化硅技术导入消费者随身携带的充电头中。

原厂动态发布时间 : 2022-01-07

650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET

Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The Rdson@100C is only 10% higher than Rdson@25C, enables better Rdson@100C*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (Rg,ext). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.

原厂动态发布时间 : 2021-06-07

SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles

With SiC inverters, it is possible to extend the range of EVs by 6~10% with the same size of battery pack, or maintain the same range with a smaller battery because of its high efficiency and high frequency operation capability. It can be sure that SiC will continue to replace Si in EVs, not just in main inverters, but also on-board chargers (OBC) and DC/DC converters, probably faster than anticipated.

行业资讯发布时间 : 2021-10-14

What is SiC and why is SiC for power devices?

In SiC, because of its 10 times strength to withstand electric field, its theoretical specific on-resistance can be 200 times smaller than Si counterpart, which enables people to use SiC to manufacture high voltage devices with simple structures. Today, unipolar SiC power devices, including SiC MOSFETs and SiC Schottky rectifiers, have been commercialized for voltage rating up to 3300V, which is unreachable by any other semiconductor materials.

原厂动态发布时间 : 2021-09-28

即思创意650V增强型SiC MOSFET，可实现比GaN更好的品质因数（FOM）

即思创意推出的增强型碳化硅场效应管（SiC MOSFET），其输出电荷（Qoss）几乎是新一代超结硅MOSFET的1/10，接近氮化镓场效应管（GaN FET）水平。

原厂动态发布时间 : 2021-07-01

SiC MOSFET Clamped Inductive Load Switching Evaluation Kit

型号- FF06190A,FSSEVB_GDRV,FSSEVB_CILS

应用笔记或设计指南 - 即思创意 - Rev. A - May 2021 PDF 英文下载

使用SiC MOSFET实现零开关损耗，开关损耗不再是开关频率限制因素

一篇在IEEE学报上发表的电力电子技术报告表明，SiC MOSFET的开关损耗在某种控制策略下可以完全消除。利用零电压开关（ZVS）开通时恢复存储在输出电容中的能量（Eoss），并使用更强的栅级驱动和减少寄生电容，来实现零关断损耗（ZTL），这便做到了零开关损耗（ZSL）。

原厂动态发布时间 : 2021-06-21

【产品】性能接近GaN FET的650V SiC MOSFET Falcon系列，调节外部栅极电阻可完全控制dV/dt

即思创意（Fastsic）增强型SiC MOSFET提供的Qoss几乎是性能优异的硅超结MOSFET的1/10，接近GaN FET。导通电阻 @ 100℃时仅比导通电阻 @ 25℃高10％，使其在导通电阻@ 100℃时的 Qoss品质因数（FOM）比GaN更好。

新产品发布时间 : 2021-05-28

碳化硅具有输出电容、相关损耗与开关频率无关的特性，速度也可以非常快

当提及高频或超高频开关时，人们首先会想到GaN（氮化镓）。然而，斯坦福大学科学家发表的一项研究表明，碳化硅的速度也非常快。

原厂动态发布时间 : 2021-06-11

解读SiC MOSFET关键参数——Vth

当代电子技术的发展不仅需要高效性能，还需要可靠和可持续的解决方案。而SiC MOSFET作为一种新型的功率器件，我们要聊的是碳化硅MOSFET中另一个关键参数——Vth，这个参数不仅关系到器件的开启与关闭，还直接影响到器件的导通损耗和开关速度，进而影响到整个系统的效率和可靠性。本文解读SiC MOSFET关键参数——Vth ，希望通过本文的介绍，您能对SiC MOSFET的Vth有更深入的了解。

技术探讨发布时间 : 2024-09-21