ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

2023-03-23 ROHM News

ROHM’s ultra-high-speed Control IC technology maximizes the performance of GaN and other high-speed switching devices.


While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of Control ICs, which are responsible for directing the driving of these devices, has become challenging.


In response, ROHM has further evolved its ultra-high-speed pulse control technology Nano Pulse Control™. It is cultivated for power supply ICs, succeeding in significantly improving the control pulse width from the conventional 9ns to an industry-best* 2ns. Leveraging this technology allowed ROHM to establish its ultra-high-speed Control IC technology that maximizes the performance of GaN devices.


When pursuing miniaturization of the power supply circuit, it is necessary to reduce the size of the peripheral components through high-speed switching. Achieving this requires a Control IC that can take advantage of the drive performance of high-speed switching devices such as GaN devices.


To propose solutions that include peripheral components, ROHM established ultra-high-speed Control IC technology optimized for GaN devices utilizing proprietary analog power supply technology Nano Pulse Control™.


ROHM is currently working to commercialize Control ICs utilizing this technology, with plans to start sample shipment of 100V 1ch DC-DC Control IC in the second half of 2023. Using in conjunction with ROHM GaN devices (EcoGaN™ series) is expected to result in significant energy savings and miniaturization in a variety of applications, including base stations, data centers, FA equipment (factory automation equipment), and drones.


Going forward, ROHM will continue to develop products that solve social issues by pursuing greater ease of use in applications centered on its strengths in analog technology.


Professor Yusuke Mori, Graduate School of Engineering, Osaka University

“GaN has been highly anticipated for many years as a power semiconductor material that can achieve energy savings, but there are obstacles such as quality and cost. Under these circumstances, ROHM has established a mass production system for GaN devices that deliver improved reliability while also developing Control ICs that can maximize their performance. This represents a huge step towards the widespread adoption of GaN devices.

To truly demonstrate the performance of power semiconductors, it is necessary to organically link each technology, such as wafers, devices, Control ICs, and modules. In this regard, Japan is home to many leading companies, including ROHM. I hope to contribute to achieving a decarbonized society by collaborating with our GaN on GaN wafer technology and ROHM's devices as well as Control ICs and modules.”

Control IC Technology

ROHM’s new Control IC technology incorporates Nano Pulse Control™. It is cultivated by combining advanced analog expertise covering circuit design, processes, and layout utilizing ROHM’s vertically integrated production system. This significantly reduces the minimum control pulse width of the Control IC from the conventional 9ns to 2ns using a unique circuit configuration, making it possible to step down from high voltages up to 60V to low voltages down to 0.6V with a single power supply IC in 24V and 48V applications. On top, support for smaller drive peripheral components for high-frequency switching of GaN devices decreases the mounting area by approximately 86% over conventional solutions when paired with an EcoGaN™ power supply circuit.

Nano Pulse Control™

ROHM’s ultra-high-speed pulse control technology achieves a switching ON time (control width of the power supply IC) on the order of nanoseconds (ns), making it possible to convert from high to low voltages using a single IC - unlike conventional solutions requiring two power supply ICs.


EcoGaN™

Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing the low ON resistance and high-speed switching characteristics of GaN to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.


*EcoGaN™ and Nano Pulse Control™ are trademarks or registered trademarks of ROHM Co., Ltd.



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本文由玄子转载自ROHM News,原文标题为:ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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型号- XL3842,XL2843,XL3844,XL2842,XL3843,XL2845,XL2844,XL3845,XL384X,XD3842,XD2842,XD3843,XD2843,XD3844,XD2844,XD3845,XD2845,XD384X,3842,3843,3844,3845

2024/5/17  - 信路达  - 数据手册  - Rev 1.1 代理服务 技术支持 批量订货

GaN Reliability and Lifetime Projections: Phase 16

型号- EPC2302,EPC2218A,EPC23102,EPC21701,EPC21601

2024/2/21  - EPC  - 测试报告 代理服务 技术支持 批量订货

ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation Showcasing Highly Efficient EcoGaN™ and SiC Power Solutions

During this year’s PCIM Europe, ROHM presents its new power semiconductor solutions – with a special focus on wide bandgap devices. ROHM’s SiC, Si and GaN portfolio is designed to fulfill the needs of various sectors – focusing on e-mobility and power supply applications.

2024-05-21 -  原厂动态 代理服务 技术支持 批量订货

ADAS Camera Systems Power supply and Data Interface Solutions White Paper

型号- BU18TMA41-C,BU18RM84-M,BU18RM41-M,BU18RM84-C,BD868XXMUF-C SERIES,BU18XMXX-M,BD868XXMUF-C,BU18RM41-C,BU18XMXX-M SERIES,BU18TM41-M,BR24HXX-5AC

2022/6/29  - ROHM  - 白皮书  - Rev.002 代理服务 技术支持 批量订货
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IC代烧录及驻厂烧录

可烧录MCU/MPU,EPROM,EEPROM,FLASH,Nand Flash, PLD/CPLD,SD Card,TF Card, CF Card,eMMC Card,eMMC,MoviNand, OneNand等各类型IC,IC封装:DIP/SDIP/SOP/MSOP/QSOP/SSOP/TSOP/TSSOP/PLCC/QFP/QFN/MLP/MLF/BGA/CSP/SOT/DFN.

最小起订量: 1 提交需求>

EDA芯片设计软件免费使用

世强深圳实验室提供Robei EDA软件免费使用服务,与VCS、NC-Verilog、Modelsim等EDA工具无缝衔接,将IC设计高度抽象化,并精简到三个基本元素:模块、引脚、连接线,自动生成代码。点击预约,支持到场/视频直播使用,资深专家全程指导。

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