【产品】SOT-223封装贴片NPN硅晶体三极管CZT5551E，集电极击穿电压为250V

时间： 2018-10-23 来源：CENTRAL

技术问答

美国中央半导体公司（ Central Semiconductor ）是世界顶级分立半导体生产商，其总部设在美国纽约Hauppauge。该公司获得IS9001：2000认证，其产品符合ROHS标准。CZT5551E是一款由CENTRAL推出的加强型贴片晶体三极管，组成结构为硅NPN结构。该产品设计经典，功能性强，严谨的SOT-223型封装结构，保证了该产品的结构品质，是一款高质量耐用型NPN硅晶体三极管。

CZT5551E晶体三极管通用于各种放大器应用电路，市场应用范围广，适用性强。其集电极击穿电压为250V，有着高耐受反向击穿电压的特性。CZT5551E的空气热阻参数θ_JA为62.5°C /W，低热阻特性增强了该产品在使用中的可靠性。这些设计优点，使得该产品有着耐冲击性强，安全可靠，稳定性高，使用寿命长的产品特点。

图1 NPN硅晶体三极管CZT5551E的封装示意图

图2 NPN硅晶体三极管CZT5551E的封装外形尺寸图

CZT5551E的使用功耗仅为2.0W，为一款低功耗的节能环保型产品。CZT5551E的工作及存储结点温度范围为-65°C~+150°C，极强的耐低温和耐高温工作能力，使得该产品能在极其严苛的工作环境中正常使用，而不会出现性能故障导致的放大功能失效。CZT5551E的封装结构选用的是SOT-223结构，该封装结构设计经典、严谨，结构紧凑，具有在线路布局中占用空间小，布局简便，调整灵活的产品特点，深受广大电子产品设计工程师的青睐。

NPN硅晶体三极管CZT5551E的主要特点：

• 高集电极击穿电压250V

• 低漏电流，最大值50nA

• 低饱和电压：最大100mV @ 50mA

• 互补产品：CZT5401E

• SOT-223型贴片封装

NPN硅晶体三极管CZT5551E的最高额定值参数(TA=25°C)：

• 集电极-基极击穿电压V_CBO：250V

• 集电极-发射极击穿电压V_CEO：220V

• 发射极-基极击穿电压V_EBO：6.0V

• 集电极持续电流I_C：600mA

• 功率损耗P_D：2.0W

• 工作及存储温度范围T_J，T_stg： -65°C~+150°C

• 空气热阻参数θ_JA ：62.5°C /W

NPN硅晶体三极管CZT5551E的典型应用：

• 通用型开关

• 通用型放大器

• 电话产品应用

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全部评论（4）

飞熊 Lv6. 高级专家 2018-10-31

了解一下
用户86910647 Lv5. 技术专家 2018-10-23

很好呀！
刘政 Lv8. 研究员 2018-10-23

不错
喜欢笑的那个她 Lv7. 资深专家 2018-10-23

了解

没有更多评论了

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