Shindengen Developed Low Withstand Voltage Trench Structure MOSFET EETMOS Compact Package LF Series, Achieving both Lower Ron and Lower Qg

2023-08-07 Shindengen News

SHINDENGEN Electric Manufacturing Co., Ltd. (Headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) has expanded its lineup with the development of the low withstand voltage trench structure MOSFET EETMOS LF Series, which is suited for use in various consumer and vehicle-mounted high current drive circuits, various power supply circuits, relay applications, and more.


Overview

In recent years, the automotive market has seen an increase in the number of ECU components installed as a result of the addition of new ECU such as safety devices including heads-up displays, the shift to electric automobiles, and automated driving, as well as information device-related components.


At the same time, there has also been an increasing focus on improving fuel consumption, and this has resulted in ever-increasing needs for more compact components aimed at making lighter weight ECU.


Shindengen was already engaged in the mass production of MOSFET which meet these needs. However, the development of the compact, high-current package LF Series utilizes a new package structure and achieves both lower Ron and lower Qg than conventional products.

*EETMOS is a registered trademark of Shindengen under Japanese law.


Features

  • Cu clip internal structure allows for the achievement of low Ron and high current in a 5×6mm size compact package

  • Can be used as a replacement for SOP8 and HSON-type packages

  • Covers a low withstand voltage to medium withstand voltage range of 40V to 120V

  • The use of a gull-wing shape for one side of the lead alleviates substrate stress while plating of the tip improves and provides high reliability

  • Tj=175℃ guaranteed

  • Based on the AEC-Q101 standard


Recommended Applications

  • Various motor drive circuits

  • Various power circuits

  • Relays, etc.


Development Roadmap

The 4th generation achieves a 50% reduction over the 2nd generation for performance index RDS(ON) *A

Product Diagram

(Can be used as a replacement for 5×6mm size packages.)



Samples, Mass Production Period

For Consumers

Samples: January 2018

Mass Production: May 2018


For vehicle installations

Samples: June 2018

Mass Production: December 2018


Production Factory

Higashine Shindengen Co., Ltd. etc

授权代理商:世强先进(深圳)科技股份有限公司
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本文由玄子转载自Shindengen News,原文标题为:Announcement of the Development of the Low Withstand Voltage Trench Structure MOSFET EETMOS Compact Package LF Series,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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新产品    发布时间 : 2018-12-30

MOSFET product introduction

型号- F21F60CPM,F11F60CPM,P82F7R5SN,P7F60HP2,P98LF6QNK,P100FA7R5EN,P38LF6QNK,P98LF6QL,P25F60EVA,P36F28HP2,P21F60EVA,P240FZ4QNKA,F60W60CP,P4B60HP2F,P46LF7R5SLK,P5F50HP2F,F25F60CPM,P38LF6QL,VX6 SERIES,P211FZ4QMKA,P168FP7R5SNK,P40LF12SNK,P50LF10SNK,P25LF12SLK,P211,P70F7R5EN,P105LF4QNK,F31W60CP,P25B6EB,P64LF6QNK,P140LF4QLK,P70LF4QLK,P32LF10SNK,P11F60EVA,P8B10SB,P1FE90VX3,P9B0HP2F,P80FG7R5EN,P31W60EVA,P60B4EL,P13F28HP2,P5B52HP2,P72LF7R5SLK,P240FZ4QLA,P3FH90VX3,P5FH90VX3,P170FZ6QNKA,P60B6SN,P24LF4QMK,P98LF6QLK,F39W60CP,F16F60CPM,P38LF6QLK,P32F12SN,P56LA4SN,P8B30HP2,P180FP4SNK,P17F28HP2,P46LF7R5SNK,P105LF4QN,P4F90VX3,P7F90VX3,FZ4QMKA,P60W60EVA,CP SERIES,P140LF4QL,P9B40HP2,P40LF12SLK,HP2 SERIES,P50LF10SLK,P25LF12SNK,P64LF6QLK,P140LF4QNK,P16F60EVA,P32LF10SLK,P105LF4QLK,P70LF4QNK,P39W60EVA,P3B28HP2,P10B28HP2,P260FZ4QNKA,HP2VX,P200FZ6QNKA,P72LF7R5SNK,2SK3566

商品及供应商介绍  -  SHINDENGEN  - 2020 Feb. PDF 英文 下载

【应用】六合一MOSFET功率模块助力EPS逆变设计

恰能解决PCB驱动板面积受限制、封闭性散热难等技术难题的功率模块。

新应用    发布时间 : 2019-07-27

The Basic Principle of N-channel Enhanced MOSFET

Power MOSFETs are mainly used in computer peripherals (soft and hard drives, printers, graphics machines), power supplies (AC/DC converters, DC/DC converters), automotive electronics, audio circuits and instruments, and other fields.

技术探讨    发布时间 : 2024-05-31

Diotec(德欧泰克)MOSFET/三极管选型指南

目录- Pwer Mosfets/Transistors   

型号- DI035P04PT,DIT050N06,DI050N04PT,2SA1012R,DI080N03PQ,DI035N10PT,DI015N25D1,DIT100N10,DIT090N06,DIT195N08,DI110N15PQ,DIT120N08,DI080N06PQ,DI150N03PQ,DI020N06D1,DI068N03PQ,DI045N03PT,DI040N03PT,2SC3851,DI028P03PT,2SC2983,DIT095N08,DI030N03D1,DI110N04PQ,DI010N03PW,DI045N10PQ,DI100N10PQ,DIT150N03,DI038N04PQ2,DI110N03PQ

选型指南  -  DIOTEC  - Version 26  - 2021 PDF 英文 下载

Diotec‘s Power MOSFET DI100N10PQ in E-Bike Drives Offers Low losses and Longer Battery Life

Diotec‘s latest power MOSFETs DI100N10PQ, are the perfect solution for controlling the brushless DC motors used in e-bikes. They offer a drain current of up to 100A at a drain-source voltage of 100V.

应用方案    发布时间 : 2024-04-12

Dual P-Channel MOSFET CJ3139KDW, Using Advanced Power Trench Process to Optimize the RDS(ON)

This JSCJ Dual P-Channel MOSFET CJ3139KDW has been designed using an advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.

产品    发布时间 : 2023-11-08

Shindengen(新电元)汽车级功率MOSFET系列(低压)产品介绍

描述- Power MOSFET Series Low Voltage

型号- P16LD6SBK,P98LF6QNK,P45LD7R5SLK,P12FE7R5SBK,P30FE6SLK,P54LD6SLK,P180FP6SNK,P100FP12SNK,P46LF7R5SLK,P56FP12SNK,P88FP10SNK,P70FP12SNK,P76LD4SLK,P168FP7R5SNK,P40LF12SNK,P50LF10SNK,P20FE12SLK,P25LF12SLK,P105LF4QNK,P64LF6QNK,P140LF4QLK,P32LF10SNK,P175FP4SNK,P40LD6SLK,P23LD10SLK,P8FE10SBK,P72LF7R5SLK,P214FZ6QNKA,P14FE6SBK,P98LF6QLK,LF系列,P173FZ6QNKA,LD系列,P30FE4SLK,FE系列,P13LD7R5SBK,P33LD7R5SLK,P180FP4SNK,P46LF7R5SNK,P22FE4SBK,P211FZ4QNKA,P153FP6SNK,P70FP10SNK,P214FZ4QNKA,P30FE7R5SLK,P40LF12SLK,P50LF10SLK,P25LF12SNK,P126FP10SNK,P64LF6QLK,P140LF4QNK,P26FE10SLK,P58LD4SLK,P32LF10SLK,P9LD10SBK,P105LF4QLK,FP系列,P31LD10SLK,P25LD12SLK,P72LF7R5SNK,P25LD4SBK,P18LD12SLK

商品及供应商介绍  -  SHINDENGEN  - 2017年10月 PDF 英文 下载

The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications

The Slkor Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.

产品    发布时间 : 2024-04-11

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功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

丙烯酸/光固化&双固化UV胶定制

可定制UV胶的粘度范围:150~25000cps,粘接材料:金属,塑料PCB,玻璃,陶瓷等;固化方式:UV固化;双固化,产品通过ISO9001:2008及ISO14000等认证。

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