【产品】P沟道逻辑增强型MOSFET AM4409,适用于电池供电电路的高边开关电路
AIT推出的AM4409是P沟道逻辑增强型MOSFET,采用先进的高单元密度沟槽技术生产。这种高密度工艺专门用于最大限度地降低通态电阻,特别适用于低压应用、笔记本电脑电源管理等电池供电电路的高边开关电路。AM4409采用SOP8封装,其引脚分布图如图1所示。
图1 AM4409引脚分布图
AM4409产品特性
•-30V/-15A,RDS(ON)=5.5mΩ(典型值)(VGS=-10V)
•-30V/-10A, RDS(ON)=6.5mΩ(典型值)(VGS=-4.5V)
•先进的设计致力于实现极低的RDS(ON)
•表现卓越的导通电阻性能和最大直流载流能力
•ESD保护:3kV
•采用SOP8封装
AM4409应用领域
•高频负载点同步
•DC-DC电源系统
•负载开关
AM4409订购信息
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本文由cucumber翻译自AIT,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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产品 发布时间 : 2021-11-18
【产品】采用先进的沟槽技术的N和P沟道增强型MOSFET AP2520ES6,ESD保护高达2.0KV(HBM)
铨力半导体推出的采用SOT-23-6L封装的N和P沟道增强型MOSFET AP2520ES6,采用先进的沟槽技术,是无铅产品,ESD保护高达2.0KV(HBM),适用于接口开关,负载开关,逻辑电平转换等应用。
产品 发布时间 : 2023-03-23
【产品】SOT-523封装的P沟道增强型MOSFET AP3139KE,ESD保护高达2.0KV(HBM)
铨力半导体推出一款采用SOT-523封装的P沟道增强型MOSFET AP3139KE,采用先进的沟槽技术,漏源电压最大额定值为-20V,连续漏极电流最大额定值为-0.66A(Ta=25℃),无铅产品,ESD保护高达2.0KV(HBM),适用于接口开关、负载开关、逻辑电平转换等应用。
产品 发布时间 : 2023-03-10
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。
最小起订量: 1 提交需求>
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